• Journal of Genetic Medicine
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• v.3 no.1
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• pp.33-37
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• 1999

Recombinant adenovirus vector systems with strong promoters have been used to achieve high level production of recombinant protein. However, this overexpression system cause some problems such as disturbance of cell physiology and increment of cellular toxicity. Here, we showed a tetracycline-regulated adenovirus expression vector system. Our results showed that the expression level of transgene(p-53) was high and easily regulated by tetracycline. In addition, the maximal gene expression level of the tetracycline-controlled gene expression system was higher than that of the wild type CMV promoter system. Therefore, tetracycline-regulated adenoviral vector system could be applicable for regulatory high-level expression of toxic gene. Also, this system will be useful for functional studies and gene therapy.

• Proceedings of the PSK Conference
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• 2001.04a
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• pp.191.1-191.1
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• 2001

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1253-1256
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• 2007

A display device combining plasma display panel (PDP) and field emission display (FED) is proposed to achieve high luminous efficiency. The device can avoid the main energy loss channels of both PDP (ion loss) and FED (low CL efficiency). $2{\sim}6$”-diagonal test panels with carbon nano-tube (CNT) electron emitter and Xenon ambient gas showed the luminous efficiency of 4.14lm/W and brightness of $263cd/m^2$ at 35V (1kHz, 1% duty), indicating that it is a good candidate for the low voltage driven, highly efficient next generation display.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1658-1660
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• 2007

We fabricate green device having unique life time characteristics of operating voltage reduction with time, ${\Delta}V_{op}$ <0. A green device needs lower voltage than initial voltage for sustaining constant current as life time goes on. It means there are two possible reasons; one is interface modification between anode and HIL due to oxygen plasma treatment and the other is bulk property modification due to combination of new green host and new green dopant. From these materials and oxygen plasma treatment, we can make white OLED device having the characteristics of low ${\Delta}V_{op}$ increasing.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1033-1034
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• 2005

High resolution 2.1” QVGA LTPS LCD (190ppi) having high aperture ratio of 65% could be successfully developed using state-of-the-art SLS technology and active/gate storage structure. Cost effective P-MOS 6-Mask structure was used. Full gate and transmission gate circuits are integrated in the panel. The high aperture ratio was obtained by using active/gate capacitance structure, which can reduce storage capacitance area. The aperture ratio was increased to 65% from 49% of conventional gate/data capacitance structure. The brightness was increased from 180cd to 270cd without any degradation of optical properties such as contrast ratio, flicker or crosstalk.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1035-1037
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• 2005

2.32-inch $320{\times}350$ TFT-LCD with high resolution (206PPI) for advanced mobile phones could be successfully developed. The compact pixel design based on PMOS SLS technique is used to achieve this high resolution. Gate driver and part of data driver are integrated onto the glass substrate. High brightness (170cd) and contrast ratio (400:1) were obtained with very low flickering and crosstalk levels.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.149-152
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• 2005

We present the characterization of poly-Si TFT fabricated below on Plastic Substrate below $170^{\circ}C$ on plastic substrate using excimer laser crystallization of Xe sputtered Si films. Gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using inductively coupled plasma CVD. Finally, we successfully fabricate TFT with a electron field-effect mobility value greater than $290\;cm^2/Vsec$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.69-75
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• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• Journal of Gastric Cancer
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• v.15 no.1
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• pp.58-63
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• 2015

Gastric duplication cyst is a rare congenital anomaly of the gastrointestinal tract and is especially uncommon in adults. Most cases in adults are discovered incidentally on radiological examination or gastric endoscopy. Accurate diagnosis of these cysts before resection is difficult. Differential diagnoses are varied. Malignant transformation of a gastric duplication cyst is very rare. We present three cases of asymptomatic noncommunicating gastric duplication cysts in adults.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.