• Title/Summary/Keyword: Samsung

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The effect of plasma damage on electrical properties of amorphous GaInZnO film

  • Kim, Min-Kyu;Park, Jin-Seong;Jeong, Jae-Kyeong;Jeong, Jong-Han;Ahn, Tae-Kyung;Yang, Hui-Won;Lee, Hun-Jung;Chung, Hyun-Joong;Mo, Yeon-Gon;Kim, Hye-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.640-643
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    • 2007
  • The effect of plasma damage was investigated on amorphous gallium-indium-zinc oxide (a-GIZO) films and transistors. Ion-bombardment by plasma process affects to turn semiconductor to conductor materials and plasma radiation may degrade to transistor electrical properties. All damages are easily recovered with a $350^{\circ}C$ thermal annealing.

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Poly-Si TFT on Metal Foil for 5.6-inch UTL (ultra-thin and light) AMOLED

  • Jeong, Jae-Kyeong;Lee, Hun-Jung;Kim, Min-Kyu;Hwang, In-Chan;Kim, Tae-Jin;Shin, Hyun-Soo;Ahn, Tae-Kyung;Lee, Jae-Seob;Kwack, Jin-Ho;Jin, Dong-Un;Mo, Yeon-Gon;Chung, Ho-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.198-201
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    • 2006
  • The optimization of poly-Si TFT process on metal foil for UTL AMOLED was systematically investigated. The improvement in device performance of poly-Si TFT on metal foil was achieved by optimizing the dopant activation condition and gate dielectric structure. Hence, the world first flexible full color 5.6-inch AMOLED with top emission mode on poly-Si TFT stainless steel foil is demonstrated.

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5.0 inch WVGA Top Emission AMOLED Display for PDA

  • Lee, Kwan-Hee;Ryu, Seoung-Yoon;Park, Sang-Il;Ryu, Do-Hyung;Kim, Hun;Song, Seung-Yong;Chung, Bo-Yong;Park, Yong-Sung;Kang, Tae-Wook;Kim, Sang-Chul;Cho, Yu-Sung;Park, Jin-Woo;Kwon, Jang-Hyuk;Chung, Ho-Kyoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.7-10
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    • 2003
  • Samsung SDI has developed a full color 5.0" WVGA AMOLED display with top emission and a super fine pitch of 0.1365mm(l86ppi), the world's highest resolution OLED display ever reported to date. Scan driver circuits and demux circuit were integrated into the display panel, using low temperature poly-Si TFT CMOS technology, and data driver circuit were mounted using COG chips. Peak luminescence was greater than 300cd/ $m^2$ with power consumption of 500mW with 30% of the pixels on illuminated.

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