• Steel and Composite Structures
• /
• v.43 no.2
• /
• pp.165-183
• /
• 2022

Most transportation departments have recognized and developed procedures to address the ever-increasing weights of trucks traveling on bridges in a service today. Transportation agencies also recognize the issues with overheight vehicles' collisions with bridges, but few stakeholders have definitive countermeasures. Bridges are becoming more vulnerable to collisions from overheight vehicles. The exact response under lateral impact force is difficult to predict. In this paper, nonlinear impact analysis shows that the degree of deformation recorded through the modeling of the unprotected vehicle-girder model provides realistic results compared to the observation from the US-61 bridge overheight vehicle impact. The predicted displacements are 0.229 m, 0.161 m, and 0.271 m in the girder bottom flange (lateral), bottom flange (vertical), and web (lateral) deformations, respectively, due to a truck traveling at 112.65 km/h. With such large deformations, the integrity of an impacted bridge becomes jeopardized, which in most cases requires closing the bridge for safety reasons and a need for rehabilitation. We proposed different sacrificial cushion systems to dissipate the energy of an overheight vehicle impact. The goal was to design and tune a suitable energy absorbing system that can protect the bridge and possibly reduce stresses in the overheight vehicle, minimizing the consequences of an impact. A material representing a Sorbothane high impact rubber was chosen and modeled in ANSYS. Out of three sacrificial schemes, a sandwich system is the best in protecting both the bridge and the overheight vehicle. The mitigation system reduced the lateral deflection in the bottom flange by 89%. The system decreased the stresses in the bridge girder and the top portion of the vehicle by 82% and 25%, respectively. The results reveal the capability of the proposed sacrificial system as an effective mitigation system.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2010.05a
• /
• pp.27.2-27.2
• /
• 2010

In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at $50^{\circ}C$. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of $Si_3N_4$ (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS.

• Proceedings of the Korea Crystallographic Association Conference
• /
• 2002.11a
• /
• pp.48-48
• /
• 2002

It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.6
• /
• pp.343-348
• /
• 2015

In this paper, arc Zn thermal spray coating was carried out on the SS400 steel, and then various electrochemical characteristics and surface damage behavior of Zn thermal spray coating layer were analyzed. As the results, the potential of Zn thermal spray coating layer presented driving voltage above 300 mV compare to that of SS400 steel. The passivity characteristic in anodic polarization curve was not presented. It was adequate to as sacrificial anode material. In the surface damage after galvanostatic experiments, uniform corrosion tendency of Zn thermal spray coating layer was clearly observed with acceleration of the dissolution reaction. In conclusion, Zn thermal spray coating could be determined to represent the corrosion protection effect by stable sacrificial anodic cathodic protection method in seawater because it had sufficient driving voltage and uniform corrosion damage tendency for the SS400 steel.

• Corrosion Science and Technology
• /
• v.17 no.6
• /
• pp.272-278
• /
• 2018

Reinforced concrete (RC) has been used as a construction material in various environments, such as airports, bridges, and ocean concrete structures, etc. Over time, however, rebar in the concrete is prone to corrosion from environmental forces and structural defects of the concrete. Cathodic protection (CP) was invented to prevent problems with corrosion and is widely used for different applications. Cathodic protection is divided into two types: sacrificial anode cathodic protection (SACP) and impressed current cathodic protection (ICCP). There are several limitations to the use of sacrificial anode cathodic protection in complex reinforced concrete structures, including concrete resistivity, throwing power of the CP, and environmental conditions. These limitations can affect the protection performance of SACP. Therefore, we used impressed current cathodic protection in our study. We tested Ti-Mesh, Ti-Rod, and Ti-Ribbon anodes in slab type reinforced concrete specimens. Electrochemical tests were conducted to confirm the impressed current cathodic protection performance under different environmental conditions.

• Journal of Korean Society of Environmental Engineers
• /
• v.31 no.12
• /
• pp.1081-1088
• /
• 2009

The performance of a electrocoagulation (EC) process was examined for the removal of Rhodamine B (RhB) using iron electrode. The effects of operational parameters such as electrode material (aluminum and iron), current density, NaCl dosage, intial pH and initial dye concentration on RhB removal efficiency were investigated. The optimum range for each of these operating variables were experimentally determined. The experimental results showed that the iron is superior to aluminum as sacrificial electrode material. The optimum time of electrolysis, current density, NaCl dosage and pH were 10 min, 1630 A/$m^2$, 4 g/L and neutral pH, respectively. Under these conditions, RhB was effectively removed (> 93.4%) and also more than 80% of COD was removed (> 88.9%) when the initial concentration of RhB was 230 mg/L. The electrical energy consumption in the above conditions for the color and COD of RhB removal were 10.3 and 10.8 kWh/kg RhB, respectively. The electrocoagulation process could be a promising technology to treat dye wastewater containing RhB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.558-561
• /
• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.558-561
• /
• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2011.10a
• /
• pp.3.1-3.1
• /
• 2011

Nanoengineered materials with advanced architectures are critical building blocks to modulate conventional material properties or amplify interface behavior for enhanced device performance. While several techniques exist for creating one dimensional heterostructures, electrospinning has emerged as a versatile, scalable, and cost-effective method to synthesize ultra-long nanofibers with controlled diameter (a few nanometres to several micrometres) and composition. In addition, different morphologies (e.g., nano-webs, beaded or smooth cylindrical fibers, and nanoribbons) and structures (e.g., core-.shell, hollow, branched, helical and porous structures) can be readily obtained by controlling different processing parameters. Although various nanofibers including polymers, carbon, ceramics and metals have been synthesized using direct electrospinning or through post-spinning processes, limited works were reported on the compound semiconducting nanofibers because of incompatibility of precursors. In this work, we combined electrospinning and galvanic displacement reaction to demonstrate cost-effective high throughput fabrication of ultra-long hollow semiconducting chalcogen and chalcogenide nanofibers. This procedure exploits electrospinning to fabricate ultra-long sacrificial nanofibers with controlled dimensions, morphology, and crystal structures, providing a large material database to tune electrode potentials, thereby imparting control over the composition and shape of the nanostructures that evolved during galvanic displacement reaction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.8
• /
• pp.711-714
• /
• 2008

Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.