• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.139-139
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• 2006

• Journal of the Korean Solar Energy Society
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• v.29 no.6
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• pp.32-38
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• 2009

The effects of surface radiative properties on the radiant cooling of opaque surfaces under clear sky condition are studied. Two types of surfaces, one gray and the other selective, are compared. For the nighttime cooling, black surface gives the lowest plate temperature and on the other hand the ideal selective surface gives the highest temperature. The reverse is true when there is an insolation. Equivalent radiative heat transfer coefficient of radiant cooling without convection is about $1{\sim}7\;W/m^2-K$ for the range of values studied. The surface with black within the $6{\sim}13\;{\mu}m$ band else zero emissivity could be regarded as a black surface for the nighttime radiant cooling purposes. However, lower band limit of $4\;{\mu}m$ is preferred to $6\;{\mu}m$ for small insolation situations.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.259-262
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• 2003

The surface electronic state of rutile $TiO_2$, which is an oxide semiconductor and has a wide band gap of 3.1 $\sim$ 3.5 eV, was calculated by DV-$X_{\alpha}$ method, which is a sort of the first principle molecular orbital method and uses Hartre-Fock-Slater approximation. The $[Ti_{15}O_{56}]^{-52}$ cluster model was used for the calculation of bulk state and the $[OTi_{11}O_{34}]^{-24}$ model for the surface state calculation. After calculations, the energy level diagrams and the deformation electron density distribution map were compared in both models. As results, it was identified that the surface energy levels are found between the valence and conduction band of bulk $TiO_2$ on the surface area. The energy values of these surface-induced levels are lower than conduction band of bulk $TiO_2$ by 0.1 $\sim$ 1 eV. From this fact, it is expected that the surface energy levels act as donar levels in n-type semiconductor.

• Textile Coloration and Finishing
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• v.18 no.6 s.91
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• pp.49-56
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• 2006

Surface treatment using UV irradiation was carried out to improve optical properties of polarizing films. The effects of UV energy of the UV-treated PVA films were investigated by measuring reflectance, surface roughness, contact angles, ESCA, and ATR. Reflectance decreased at wavelength of 450 nm or less and surface roughness increased with increasing UV energy. Water contact angle increased in the irradiated PVA films and surface energy decreased with increase in w energy. An analysis showed that the OH groups were broken and some new groups were introduced such as C=C and C=O bonds together with increased $O_{1s}/C_{1s}$, resulting in the observed surface modification effect. Surface modified PVA polarizing films showed improvement in light transmittance of polarizing films at high wavelength region without deteriorating polarization efficiency, which was not affected by UV irradiation sequence during manufacturing processes such as coloring and drawing.

• Macromolecular Research
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• v.13 no.5
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• pp.409-417
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• 2005

The surface of rutile titania nanoparticles was chemically modified by reacting with alkoxy silane. The surface and rheological properties in silicone oil having a wide range of viscosity were investigated. Total surface free energy($\gamma_S$) of the titania particles decreased from 53.12 to 26.94 mJ/$m^2$ as the silane used for surface treatment was increased from 0 to 5.0 wt$\%$. The surface free energy of neat silane was 25.5 mJ/$m^2$, which is quite close to that oftitania particles treated with 5.0 wt$\%$ silane. Due to the hydrophobic nature oftreated-titania, the contact angle was accordingly higher for polar solvent in the order of water>ethylene glycol> formamide>$\alpha$-bromonaphthalene. In sum of rheological behavior, as the applied shear stress or viscosity of the silicone oil increased, the titania particles tend to form layers and agglomerated clusters, showing shear-thinning and shear-thickening behaviors, sequentially. A good dispersion of discrete titania particles obeying a Newtonian flow behavior was achieved at a surface energy or low concentration of silane-treated titania particles in hydrophobic silicone oil.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1531_1532
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• 2009

This paper presents a method of self-arranging solderballs by using surface energy difference. After evaporating Au which has high surface energy on Si substrates, Teflon passivation layer which has low surface energy was patterned by lift-off process. Droplets formed only on the hydrophilic Au solderball lands by the surface energy difference, not the hydrophobic Teflon surface. Scattered solderballs sticked by themselves to the wetted solderball lands on the tilted substrate. After setting preheating of $200^{\circ}C$ and soldering of $245^{\circ}C$ hot plates, the solderballs were soldered on the solderball lands and two substrates were soldered together completely. After measuring the mechanical shear strength of the soldered substrates with solderballs of $3{\times}3$, $4{\times}4$ and $5{\times}5$ arrays. the calculated shear strength per one solderball was 1.1~2.4kgf as high as the previous report.

• Journal of Radiation Industry
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• v.6 no.4
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• pp.317-322
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• 2012

In this study, the preparation of a temperature-responsive poly(N-isopropylacrylamide) (PNIPAAm)-grafted surface was performed using an eco-friendly and biocompatible ion beam-induced surface graft polymerization. The surface of a perfluoroalkoxy (PFA) film was activated by ion implantation and N-isopropylacrylamide (NIPAAm) was then graft polymerized selectively onto the activated regions of the PFA surfaces. Based on the results of the peroxide concentration and grafting degree measurements, the amount of the peroxide groups formed on the implanted surface was dependant on the fluence, which affected the grafting degree. The results of the FT-IR-ATR, XPS, and SEM confirmed that the NIPAAm was successfully grafted onto the implanted PFA. Moreover, the contact angle measurement at different temperatures revealed that the surface of the PNIPAAm-grafted PFA film was temperature-responsive.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.105-109
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• 2006

The effects of negative carbon ion beam energy on the bonding configuration, hardness and surface roughness of DLC film prepared by a direct metal ion beam deposition system were investigated. As the negative carbon ion beam energy increased from 25 to 150 eV, the $sp^3$ fraction of DLC films was increased from 32 to 67%, while the surface roughness was decreased. The films prepared at 150 eV showed the more flat surface morphology of the film than that of the film prepared under another ion beam energy conditions. Surface roughness of DLC film varied from 0.62 to 0.22 nm with depositing carbon ion beam energy. Surface nano-hardness increased from 12 to 57 Gpa when increasing the negative carbon ion beam energy from 25 to 150 eV, and then decreased when increasing the ion beam energy from 150 to 200 eV.

• Bulletin of the Korean Chemical Society
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• v.32 no.5
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• pp.1527-1533
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• 2011

The reaction of gas-phase atomic hydrogen with oxygen atoms chemisorbed on a silicon surface is studied by use of the classical trajectory approach. We have calculated the probability of the OH formation and energy deposit of the reaction exothermicity in the newly formed OH in the gas-surface reaction H(g) + O(ad)/Si${\rightarrow}$ OH(g) + Si. All reactive events occur in a single impact collision on a subpicosecond scale, following the Eley-Rideal mechanism. These events occur in a localized region around the adatom site on the surface. The reaction probability is dependent upon the gas temperature and shows the maximum near 1000 K, but it is essentially independent of the surface temperature. The reaction probability is also independent upon the initial excitation of the O-Si vibration. The reaction energy available for the product state is carried away by the desorbing OH in its translational and vibrational motions. When the initial excitation of the O-Si vibration increases, translational and vibrational energies of OH rise accordingly, while the energy shared by rotational motion varies only slightly. Flow of energy between the reaction zone and the solid has been incorporated in trajectory calculations, but the amount of energy propagated into the solid is only a few percent of the available energy released in the OH formation.