• 제목/요약/키워드: SURFACE CRYSTALLIZATION

검색결과 432건 처리시간 0.022초

Correlation defects of macrostructure with morphology of BGO crystals grown by low thermal gradient Czochralski technique

  • Shlegel, V.N.;Shubin, Yu.V.;Ivannikova, N.V.
    • 한국결정성장학회지
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    • 제13권1호
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    • pp.1-4
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    • 2003
  • In the present work we consider morphological structure of the faces of BGO crystals grown by Czochralski technique under the conditions of low temperature gradient (0.1~1 deg/cm) and interconnection between the morphological features of faces at the crystallization front and the formation of defects within the crystal volume. It is demonstrated that the {112} faces retain stability while the growing surface deviates from the crystallographic (112) plane up to 1 degree. At larger deviation, the region of the stable facet growth passes either to the region of macrosteps or to the region of normal growth. depending on conditions.

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

  • Lee, Kwang-Jin;Kim, Doyeon;Choi, Duck-Kyun;Kim, Woo-Byoung
    • 한국재료학회지
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    • 제28권8호
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    • pp.440-444
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    • 2018
  • An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from $9.43{\times}10^{-12}$ to $3.43{\times}10^{-12}$ A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

Transfer Characteristics of Poly-Si TFTs with Laser Energy Change

  • You, Jae-Sung;Kim, Young-Joo;Jung, Yun-Ho;Seo, Hyun-Sik;Kang, Ho-Chul;Lim, Kyong-Moon;Kim, Chang-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.401-404
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    • 2004
  • Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.

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알루미나에 코팅된 불화물 생체유리에의 수산화 아파타이트 형성 (Hydroxyapatite Formation on Fluoride Bioactive Glasses coated on Alumina)

  • 안현수;이은성;김철영
    • 한국세라믹학회지
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    • 제36권10호
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    • pp.1087-1093
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    • 1999
  • Bioglass which is one of the surface active bionmaterials has a good biocompatibility but a poor mechanical strength, In the present work therefore two types of fluoride-containing bioglasses were coated on an alumina to improve mechanical strength. Crystallization of the coating layer and the hydroxyapatite formation on the bioactive glass coatings in tris-buffer solution were studied. When bioactive glass coated alumina was heat-treated Na2CaSi3O8 crystal was formed on the layer at lower temperature while wollastonite(CaSIO3) was obtained at higher temperature. Hydroxyapatite forming rate on the coating layer with Na2CaSi3O8 crystal was delayed with SiO2 contents in glass composition. However the hydroxyapatite was developed in 20minutes regardless SiO2 contents when the coating layer crystallized into wollastonite. More amount of P3+ ions were leached out of the coating layer with wollastonite than that with Na2CaSi3O8 crystal while Na+ and Ca2+ ions were leached out more easily from the Na2CaSi3O8 crystal containing coating layer.

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공침법에 의한 지르코니아분말의 합성 및 특성 III) ZrO2-Y2O3-Bi2O3의 특성 및 소결성 (A Synthesis and Characteristics for Zirconia Powders by Coprecipitation Method ; III) The Properties and Sinterabilities of ZrO2-Y2O3-Bi2O3)

  • 윤종석;이동인;오영제;이희수
    • 한국세라믹학회지
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    • 제26권5호
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    • pp.655-660
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    • 1989
  • The physical properties and sinterabilities of ZrO2-Y2O3-Bi2O3 ternary system powder prepared by coprecipitation were investigated. The crystallization temperatures of ternary system were increased and the specific surface areas were decreased with increasing Bi2O3 amount as sintering agents both PSZ and FSZ. Especially, the partially stabilized zirconia showed monoclinic phase. The sinterability was increased with the amount of Bi2O3 added which caused liquid phase sintering.

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Magadiite 주형을 이용한 다공성 흑연제조에 미치는 Co와 Ni 촉매 효과 (Effect of Co and Ni Catalyst on the Preparation of Porous Graphite Using Magadiite Template)

  • 최석현;권오윤
    • 한국재료학회지
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    • 제28권3호
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    • pp.189-194
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    • 2018
  • Porous graphites were synthesized by removing the template in HF after cabothermal conversion for 3 h at $900^{\circ}C$, accompanied by intercalations of pyrolyzed fuel oil (PFO) in the interlayer of Co or Ni loaded magadiite. The X-ray powder diffraction pattern of the porous graphites exhibited 00l reflections corresponding to a basal spacing of 0.7 nm. The particle morphology of the porous graphites was composed of carbon plates intergrown to form spherical nodules resembling rosettes like a magadiite template. TEM shows that the cross section of the porous graphites is composed of layers with very regular spaces. In particular, crystallization of the porous graphite was dependent on the content of Co or Ni loaded in the interlayer. The porous graphite had a surface area of $328-477m^2/g$. This indicates that metals such as Co and Ni act as catalysts that accelerate graphite formation.

ZnO Intermediate Layer가 GaN 박막의 PL 특성에 미치는 영향 연구 (Study of the Effects of ZnO Intermediate Layer on Photoluminescence Properties of Magnetron Sputtering Grown GaN Thin Films)

  • 성웅제;이용일;박천일;최우범;성만영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.574-577
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    • 2001
  • GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

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Synthesis of diamond thin films by hot-filament C.V.D

  • 최진일
    • 한국결정성장학회지
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    • 제8권2호
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    • pp.227-232
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    • 1998
  • Si, Mo 등을 substrate로 하고 Hot-Filament C.V.D법으로 저압으로 다이아몬드 박막을 생성시킬 때 탄화수소의 부착과정, 핵생성 및 성장을 조사하였다. 특성은 substrate의 종류, 온도, 압력, 유속 및 $CH_4-H_2$가스의 몰분율과 같은 process 변수로 조사하였으며 다이아몬드는 Ra-man spectroscopy로 측정하였다. 특히 다이아몬드 핵생성과 성장은 scratch와 같은 결함이 있는 곳에 발생하였고 표면확산 등이 핵생성 초기단계에서 중요한 역할을 하였다.

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Dip-coating법에 의한 ${alpha}-Fe_2O_3$막 제조에 관한 연구 (A study on the preparation of ${alpha}-Fe_2O_3$films by dip-coating method)

  • 강경원;정용선;현부성;오근호
    • 한국결정성장학회지
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    • 제8권2호
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    • pp.292-298
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    • 1998
  • 출발원료로 ferric nitrate, ethylene glycol, acethyl acetone 혼합용액을 사용하여 dip-coating된 ${\alpha}-Fe_2O_3$ 막을 제조하였다. coating을 위한 혼합용액의 시간 경과에 따른 용액내의 가교(polymerization) 효과를 관찰하기 위해서 적외선 분광기(FT-IR)를 사용하였고, 막 형성시 유기물 분해 및 결정화 시작온도를 확인하기 위하여 FT-IR, XRD, DSC 등을 이용하여 분석을 행하였다. 또한 AFM과 SEM을 통하여 각 조건에서 제조된 막의 표면상태 및 두께 변화에 대하여 관찰되었다.

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NEW METHODS OF THE GROWING COMPLICATED SHAPED SAPPHIRE PRODUCTS: VARIABLE SHAPING TECHNIQUE AND LOCAL DYNAMIC SHAPING TECHNIQUE

  • Borodin, V.A.;Sidorov, V.V.;Steriopolo, T.A.
    • 한국결정성장학회:학술대회논문집
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    • 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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    • pp.209-225
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    • 1999
  • Detailed description of the crystal growth methods permitting one to obtain complicated shape crystals from the melt is given. The variable shaping technique provides the growth of crystals with a discrete altering cross-section configuration during crystallization. The dynamic local shaping technique enables one to grow items with a continuous alteration of the side surface profile by a preset program.

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