• Title/Summary/Keyword: SURFACE CRYSTALLIZATION

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Correlation defects of macrostructure with morphology of BGO crystals grown by low thermal gradient Czochralski technique

  • Shlegel, V.N.;Shubin, Yu.V.;Ivannikova, N.V.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.1
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    • pp.1-4
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    • 2003
  • In the present work we consider morphological structure of the faces of BGO crystals grown by Czochralski technique under the conditions of low temperature gradient (0.1~1 deg/cm) and interconnection between the morphological features of faces at the crystallization front and the formation of defects within the crystal volume. It is demonstrated that the {112} faces retain stability while the growing surface deviates from the crystallographic (112) plane up to 1 degree. At larger deviation, the region of the stable facet growth passes either to the region of macrosteps or to the region of normal growth. depending on conditions.

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

  • Lee, Kwang-Jin;Kim, Doyeon;Choi, Duck-Kyun;Kim, Woo-Byoung
    • Korean Journal of Materials Research
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    • v.28 no.8
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    • pp.440-444
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    • 2018
  • An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from $9.43{\times}10^{-12}$ to $3.43{\times}10^{-12}$ A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

Transfer Characteristics of Poly-Si TFTs with Laser Energy Change

  • You, Jae-Sung;Kim, Young-Joo;Jung, Yun-Ho;Seo, Hyun-Sik;Kang, Ho-Chul;Lim, Kyong-Moon;Kim, Chang-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.401-404
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    • 2004
  • Transfer characteristics of poly-Si TFTs within process window of laser energy are investigated. In terms of surface morphology and transfer characteristics, process window of laser crystallization is evaluated. While maximum mobility exists in lower edge of process window in n-channel TFTs, maximum mobility exists in higher edge of process window in p-channel TFTs.

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Hydroxyapatite Formation on Fluoride Bioactive Glasses coated on Alumina (알루미나에 코팅된 불화물 생체유리에의 수산화 아파타이트 형성)

  • 안현수;이은성;김철영
    • Journal of the Korean Ceramic Society
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    • v.36 no.10
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    • pp.1087-1093
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    • 1999
  • Bioglass which is one of the surface active bionmaterials has a good biocompatibility but a poor mechanical strength, In the present work therefore two types of fluoride-containing bioglasses were coated on an alumina to improve mechanical strength. Crystallization of the coating layer and the hydroxyapatite formation on the bioactive glass coatings in tris-buffer solution were studied. When bioactive glass coated alumina was heat-treated Na2CaSi3O8 crystal was formed on the layer at lower temperature while wollastonite(CaSIO3) was obtained at higher temperature. Hydroxyapatite forming rate on the coating layer with Na2CaSi3O8 crystal was delayed with SiO2 contents in glass composition. However the hydroxyapatite was developed in 20minutes regardless SiO2 contents when the coating layer crystallized into wollastonite. More amount of P3+ ions were leached out of the coating layer with wollastonite than that with Na2CaSi3O8 crystal while Na+ and Ca2+ ions were leached out more easily from the Na2CaSi3O8 crystal containing coating layer.

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A Synthesis and Characteristics for Zirconia Powders by Coprecipitation Method ; III) The Properties and Sinterabilities of ZrO2-Y2O3-Bi2O3 (공침법에 의한 지르코니아분말의 합성 및 특성 III) ZrO2-Y2O3-Bi2O3의 특성 및 소결성)

  • 윤종석;이동인;오영제;이희수
    • Journal of the Korean Ceramic Society
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    • v.26 no.5
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    • pp.655-660
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    • 1989
  • The physical properties and sinterabilities of ZrO2-Y2O3-Bi2O3 ternary system powder prepared by coprecipitation were investigated. The crystallization temperatures of ternary system were increased and the specific surface areas were decreased with increasing Bi2O3 amount as sintering agents both PSZ and FSZ. Especially, the partially stabilized zirconia showed monoclinic phase. The sinterability was increased with the amount of Bi2O3 added which caused liquid phase sintering.

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Effect of Co and Ni Catalyst on the Preparation of Porous Graphite Using Magadiite Template (Magadiite 주형을 이용한 다공성 흑연제조에 미치는 Co와 Ni 촉매 효과)

  • Choi, Seok-Hyon;Kwon, Oh-Yun
    • Korean Journal of Materials Research
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    • v.28 no.3
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    • pp.189-194
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    • 2018
  • Porous graphites were synthesized by removing the template in HF after cabothermal conversion for 3 h at $900^{\circ}C$, accompanied by intercalations of pyrolyzed fuel oil (PFO) in the interlayer of Co or Ni loaded magadiite. The X-ray powder diffraction pattern of the porous graphites exhibited 00l reflections corresponding to a basal spacing of 0.7 nm. The particle morphology of the porous graphites was composed of carbon plates intergrown to form spherical nodules resembling rosettes like a magadiite template. TEM shows that the cross section of the porous graphites is composed of layers with very regular spaces. In particular, crystallization of the porous graphite was dependent on the content of Co or Ni loaded in the interlayer. The porous graphite had a surface area of $328-477m^2/g$. This indicates that metals such as Co and Ni act as catalysts that accelerate graphite formation.

Study of the Effects of ZnO Intermediate Layer on Photoluminescence Properties of Magnetron Sputtering Grown GaN Thin Films (ZnO Intermediate Layer가 GaN 박막의 PL 특성에 미치는 영향 연구)

  • 성웅제;이용일;박천일;최우범;성만영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.574-577
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    • 2001
  • GaN thin films on sapphire were grown by rf magnetron sputtering with ZnO buffer layer. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The improved film quality has been obtained by using thin ZnO buffer layer. Using Auger electron spectroscopy(AES), it was observed that the annealing process improved the GaN film quality. The surface roughness according to the annealing temperatures(700, 900, 1100$^{\circ}C$) were investigated by AFM(atomic force microscopy) and it was confirmed that the crystallization was improved by increasing the annealing temperature. Photoluminescence at 8K shows a near-band-edge peak at 3.2eV with no deep level emission.

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Synthesis of diamond thin films by hot-filament C.V.D

  • 최진일
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.227-232
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    • 1998
  • Diamond crystallization and discontinuous deposit phenomena depend on the process of hydrocarbon deposition, nucleation and growth. Then, it is investigated the concentration of methane, flow rate, structure and the growth process of $CH_4-H_2$ system in hot filament assisted C.V.D. There is a limited value of temperature, pressure, flow rate and the mole fraction of methane-hydrogen gas. Diamond nucleation occurs on substrate selectively and surface diffusion of species on the substrate plays an important role in the early stages of nucleation and growth.

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A study on the preparation of ${alpha}-Fe_2O_3$films by dip-coating method (Dip-coating법에 의한 ${alpha}-Fe_2O_3$막 제조에 관한 연구)

  • 강경원;정용선;현부성;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.2
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    • pp.292-298
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    • 1998
  • ${\alpha}-Fe_2O_3$films were prepared by a dip-coating method using the mixed solution of ferric nitrate, ethylene glycol and acethyl acetone. The polymerization effect of the mixed solution was studied by FT-IR spectroscopic analysis, and the decomposition of organic parts and crystallization of the dip-coated film were investigated by FT-IR, XRD and DSC. In addition, AFM and SEM were employed to analyze the surface roughness and the thickness of ${\alpha}-Fe_2O_3$films.

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NEW METHODS OF THE GROWING COMPLICATED SHAPED SAPPHIRE PRODUCTS: VARIABLE SHAPING TECHNIQUE AND LOCAL DYNAMIC SHAPING TECHNIQUE

  • Borodin, V.A.;Sidorov, V.V.;Steriopolo, T.A.
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.209-225
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    • 1999
  • Detailed description of the crystal growth methods permitting one to obtain complicated shape crystals from the melt is given. The variable shaping technique provides the growth of crystals with a discrete altering cross-section configuration during crystallization. The dynamic local shaping technique enables one to grow items with a continuous alteration of the side surface profile by a preset program.

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