• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1175-1180
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• 2022

STI has been studied a lot as a process technology for wide area planarization according to miniaturization and high integration of semiconductor devices. In this study, as methods for improving the STI profile, wet etching of pad oxide using hydrofluorine solution and dry etching of O₂+CF₄ after STI dry etching were proposed. This process technology showed improvement in profile imbalance and leakage current between patterns according to device density compared to the conventional method. In addition, as a result of measuring the HLD thickness after CMP for a device having the same STI depth and HLD deposition, the measured value was different depending on the device density. It was confirmed that this was due to the difference in the thickness of the nitride film according to the device density after CMP and the selectivity of the slurry.

• Journal of Korea Technology Innovation Society
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• v.22 no.2
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• pp.186-206
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• 2019

While the amount of Official Development Assistance (ODA) in Korea has been increasing, there are some criticism about the effectiveness and management of ODA itself. The ODA in the area of Science, Technology and Innovation (STI) is also increasing but seems to have many problems. First, there is not clearly defined or agreed definition for STI ODA internationally as well as domestically. Second, the evaluation on the STI ODA performance is not enough. Third, the planning and management capability to implement ODA project is generally lacking. In this background, the issue of performance factors of STI policy consultation project was analyzed using the case studies and expert interviews. It is concluded that not only STI knowledge transferring capacity but also the absorptive capacity is important for the success of STI policy consultation project. In this sense, it is suggested to plan and manage the STI ODA project with the consideration of both transferring capacity and absorptive capacity.

• Journal of Mechanical Science and Technology
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• v.14 no.7
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• pp.730-736
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• 2000

In this paper, several tire models (Magic formula, Carpet plot, VA tire, DADS tire and STI tire) are implemented and compared. Since the STI (System Technology Inc.) tire model in the AutoDyn7 program is in a good agreement to NADSdyna STI tire model and experiment, it is selected as a reference tire model for the comparison. To compare tire models, input parameters of each tire model are extracted from the STI tire model to preserve the same tire properties. Several simulations are carried out to compare performances of tire models, i. e., bump simulation, lane change simulation, and pulse steering simulation. The performances in vehicle maneuverability are also compared with the four parameter evaluation method.

• Journal of Power System Engineering
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• v.7 no.3
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• pp.61-68
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• 2003

Steering characteristics is an important factor in the evaluation of vehicle quality. To estimate steering characteristics in the vehicle conceptual design stage, vehicle dynamics simulation methods are very efficient. However, it is often difficult to simulate vehicle dynamics for the specific driving scenarios in open-loop driving environment. An efficient driver-in-the-loop vehicle model will be efficient for this job. A good tire model is also very important for the accurate vehicle dynamics simulation. In this research, a driver model is used to simulate vehicle steering dynamics for a 8-dof vehicle model with STI(Systems Technology, Inc.) tire model. For the demonstration of this model, a SUV(sports utility vehicle) and a sedan were simulated.

• Journal of the Korea Convergence Society
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• v.8 no.5
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• pp.53-60
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• 2017

This study was conducted to develop the Sexually Transmitted Infections (STI) Knowledge Scale for adolescents. Based on a literature review, the first preliminary 40 questions were created, which content validation by expert reviewers and a pilot study then refined into a draft scale of 29 items. To confirm the validity and reliability of this preliminary scale, data were collected from 141 adolescents between February 13 and 26, 2016: factor analysis resulted in a factor loading of more than .52, while convergent validity revealed that the group receiving STI education was significantly higher (p=.009). The final version of the scale contained 16 items, with a reliability measured by Cronbach's ${\alpha}$ of .85 and the 39.3% of correct answers. The STI knowledge scale developed in this study is a valid scale that can be used to evaluate the effectiveness of STI education for adolescents.

• IE interfaces
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• v.17 no.4
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• pp.440-449
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• 2004

The OERA(Offensive Earned-Run Average) is a methodology for the performance evaluation of baseball players, which is based on a well- known Markov chain model. The DEA(Data Envelopment Analysis) is an LP-based evaluation technique for performance analysis of DMUs (Decision Making Units), whose production activities are characterized by multiple inputs and outputs. In this paper, the performances of Korean professional baseball players are analytically evaluated using both OERA and DEA methods. We discuss methodological strengths and drawbacks of two kinds of baseball evaluation techniques, by comparing both results. Finally to overcome the shortcomings of both methods, we develop a new analytical approach for baseball evaluation by combining OERA with DEA.

• Information and Communications Magazine
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• v.12 no.8
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• pp.53-64
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• 1995

In this article, criteria and considerations for selecting a domestic Personal Communications Services (PCS) system in Korea are presented and upbanded IS-95 Common Air Interface (CAI) is asserted to be appropriate as a result of evaluation by the criteria. And Shinsegi Telecomm, Inc. (STI) is claimed to be a suitable operator to provide PCS by upbanded IS-95 considering the experiences as the cellular operator adopting IS-95 CDMA technology. The PCS R&D plan and strategies of STI are given and the joint R&D plan with domestic manufacturers to develop PCS systems are explained. The results from R&D so far are mentioned. The PCS network architecture and various services-basic voice service, value-added services and wireless data services-are discussed.

• STI Policy Review
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• v.4 no.2
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• pp.55-73
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• 2013

Since the 1990s, the Japanese government has made considerable attempts at stimulating innovation with an aim to pull the country out of a possibly permanent economic decline. Several laws and policy initiatives were introduced to encourage better interaction between universities (and research institutions) and industry. The results of these efforts have been mixed. While the number of university-industry joint and commissioned research has increased, revenues from the licensing of university-owned patents have fluctuated year by year. Although the number of startups and spin-offs from universities rose, their long-term survival and contribution to the economy remain uncertain. The Japanese experience features both strengths and weaknesses. Strengths include the long-term commitment of policy makers, the ability to set specific targets, and the active engagement of several key economic ministries. Nevertheless, the effectiveness of these policy initiatives was hampered by limitations within the policies concerning the roles of universities and their mode of interaction with industry based on intellectual property rights, the inadequacy of demand-side innovation policies, the fragmentation of bureaucracy, and a lack of a credible evaluation system.