• Title/Summary/Keyword: SPM(Scanning Probe Microscopy)

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나노트라이볼로지 분석을 이용한 W-N 나노박막의 표면 물성 연구

  • Kim, Su-In;Lee, Chang-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.133-133
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    • 2011
  • 최근 연구중인 소자들의 크기가 점차 나노 크기를 가짐에 따라서 나노 영역에 대한 물성 분석 연구의 필요성이 대두되고 있다. 특히 나노 크기를 가지는 소자에 대한 기계적 특성은 기존의 마이크로 이상의 소자와는 다른 특성을 보이는 것으로 보고되고 있다. 그러나 이러한 나노 크기에 대한 연구에서 대부분을 차지하는 분광학적, 전기적 방법은 측정 영역 한계와 일정 깊이에 대한 평균적인 정보를 제공하게 된다. 본 연구에서는 나노트라이볼로지 분석의 대표적인 Nano-indenter와 Scanning Probe Microscopy(SPM) 분석을 통하여 박막의 수 혹은 수십 나노 미만의 영역과 깊이에 대한 기계적 물성을 연구하였고, 이를 기반으로 수십 나노 이하 두께를 가지는 W-N 확산박지막에 대한 연구를 실시하였다. 연구 결과에 의하면, 박막의 표면 hardness는 박막의 두께가 감소함에 따라서 4.19 GPa에서 3.51 GPa로 감소하였고, Weibull modulus를 통한 박막의 균일도는 2.75에서 7.91로 급격히 증가하는 현상을 나타내었다. 또한 SPM의 Kelvin probe force microscopy (KPFM), Force modulation microscopy (FMM) mode를 활용하여 표면에서의 Nitrogen 흡착에 의한 영상, 전기적 및 표면 탄성에 대한 연구를 실시하였다.

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Design, Fabrication and Evaluation of Diamond Tip Chips for Reverse Tip Sample Scanning Probe Microscope Applications (탐침과 시편의 위치를 역전시킨 주사 탐침 현미경용 다이아몬드 탐침의 제작 및 평가)

  • Sugil Gim;Thomas Hantschel;Jin Hyeok Kim
    • Korean Journal of Materials Research
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    • v.34 no.2
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    • pp.105-110
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    • 2024
  • Scanning probe microscopy (SPM) has become an indispensable tool in efforts to develop the next generation of nanoelectronic devices, given its achievable nanometer spatial resolution and highly versatile ability to measure a variety of properties. Recently a new scanning probe microscope was developed to overcome the tip degradation problem of the classic SPM. The main advantage of this new method, called Reverse tip sample (RTS) SPM, is that a single tip can be replaced by a chip containing hundreds to thousands of tips. Generally for use in RTS SPM, pyramid-shaped diamond tips are made by molding on a silicon substrate. Combining RTS SPM with Scanning spreading resistance microscopy (SSRM) using the diamond tip offers the potential to perform 3D profiling of semiconductor materials. However, damage frequently occurs to the completed tips because of the complex manufacturing process. In this work, we design, fabricate, and evaluate an RTS tip chip prototype to simplify the complex manufacturing process, prevent tip damage, and shorten manufacturing time.

Study of Refining Effects on Pulp Fibre by Scanning Probe Microscopy(SPM) (Scanning Probe Microscopy를 이용한 고해 효과 연구)

  • ;Keity Roy Wadhams
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.30 no.4
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    • pp.49-58
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    • 1998
  • The SPM could image the most detailed microstructure of a sample in a wet and dry state by measuring the interaction between the atoms on the sample surface and the extremely sharp probe tip. The refined fibre exhibited large wrinkles formed by fibrillar bundles, the disintegrated fibres extensively showed “scale-like features”. By using the Non-Contact Atomic Force Microscopy (NC-AFM) and Contact Atomic Force Microscopy (C-AFM) including Phase Detection Microscopy (PDM) and Force Modulation Microscopy (FMM), it was possible to investigate surface topography, surface roughness and mechanical property (hardness or visco-elasticity) of fibre surface in detail. The PDM and FMM images showed that the disintegrated only fibre displayed uniform mechanical properties, whereas the refined one did not. The surface roughness of pulp fibres was higher in refined fibres than in disintegrated fibres due to the presence of external fibrils. These SPM images would be used to provide visual evidence of morphological change of a single fibre created during mechanical treatments such as refining, drying, calendering and so on.

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Nanomanipulation and Nanomanufacturing based on Ion Trapping and Scanning Probe Microscopy (SPM)

  • Kim, Dong-Whan;Tae, Won-Si;Yeong, Maeng-Hui;K. L. Ekinci
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2004.04a
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    • pp.530-537
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    • 2004
  • Development of a versatile nanomanipulation tool is an overarching theme in nanotechnology. Such a tool will likely revolutionize the field given that it will enable fabrication and operation of a wealth of interesting nanodevices. This study seeks funding to create a novel nanomanipulation system with the ultimate goal of using this system for nanomanufacturing at the molecular level. The proposed design differs from existing approaches. It is based on a nanoscale ion trap integrated to a scanning prove microscope (SPM) tip. In this design, molecules to be assembled will be ionized and collected in the nanoscale ion trap all in an ultra high vacuum (UHV) environment. Once filled with the molecular ions, the nanoscale ion trap-SPM tip will be moved on a substrate surface using scanning probe microscopy techniques. The molecular ions will be placed at their precise locations on the surface. By virtue of the SPM, the devices that are being nanomanufactured will be imaged in real time as the molecular assembly process is carried out. In the later stages, automation of arrays of these nanomanipulators will be developed.

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Using Focus Ion Beam Carbon Nanotube Tip Manipulation (Focus Ion Beam을 이용한 탄소나노튜브 팁의 조작)

  • Yoon Y.H.;Han C.S.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.461-462
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    • 2006
  • This paper reports on the development of a scanning probe microscopy(SPM) tip with caborn nanotubes. We used an electric field which causes dielectrophoresis(DEP), to align and deposit CNTs on a metal-coated SPM tip. Using the CNT attached SPM tip, we have obtained an enhanced resolution and wear property compared to that from the bare silicon tip through the scanning of the surface of the bio materials. The carbon nanotube tip align toward the source of the ion beam allowing their orientation to be changed at precise angles. By this technique, metal coated carbon nanotube tips that are several micrometer in length are prepared for scanning probe microscopy.

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The Measurement of Nano-grating by Scanning Probe Microscopy Using Digital PID Control (Digital PID Control을 적용한 Scanning Probe Microscopy의 Nano-grating 측정)

  • Park, Gyeong-Deok;Ji, Won-Su;Kim, Dae-Chan;Jang, Dong-Hun;O, Beom-Hwan;Park, Se-Geun;Lee, Il-Hang;Lee, Seung-Geol
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.07a
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    • pp.185-186
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    • 2008
  • In this paper, the nano-grating was measured by Scanning Probe Microscopy (SPM) system using digital Proportion, Integration and Derivative (PID) control. Through this measurement, we could confirm the improvement of the vertical resolution compared with analog Proportion and Integration (PI) control method.

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Electrical property analysis of Si nanocrystal by SPM(Scanning Probe Microscopy) on insulating substrate (SPM(Scanning Probe Microscopy)을 이용한 국소영역에서 실리콘 나노크리스탈의 전기적 특성 분석)

  • Choi, Min-Ki;Kim, Jung-Min;Kang, Chi-Jung;Khang, Yoon-Ho;Kim, Young-Sang
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.95-97
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    • 2004
  • 본 연구에서는 Scanning Capacitance Microscopy (SCM)와 Electrostatic Force Microscopy (EFM)을 이용하여 국소영역에서 실리콘나노 크리스탈의 전기적 특성을 분석하였다. 실리콘 나노 크리스탈은 에어로솔 방식으로 P-type 실리콘웨이퍼 위에 $10{\sim}40\;nm$의 크기와 약 $10^{11}/cm^2$의 밀도를 갖도록 제작하였다. 실리콘 나노 크리스탈에서 전자와 정공의 trapping 현상은 EFM, SCM 이미지를 통하여 관찰하였고 이러한 나노 크리스탈의 국소영역 특성을 MOS 캐패시터 구조의 C-V 특성을 비교 분석하였다. 또한, 나노 크리스탈에 trapping된 전하의 detrapping 과정을 스트레스 조건에 따라 분석하였다.

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Characterization of Electrical Properties of Si Nanocrystals Embedded in a $SiO_2$ Layer by Scanning Probe Microscopy (SPM (Scanning Probe Microscopy)을 이용한 $SiO_2$ layer에서의 실리콘 나노 크리스탈의 전기적 특성 분석)

  • Kim, Jung-Min;Her, Hyun-Jung;Son, J.M.;Lee, Eun-Hye;Khang, Yoon-Ho;Kang, Chi-Jung;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1900-1902
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    • 2005
  • 본 연구에서는 scanning probe microscopy(SPM)을 이용하여 국소영역에서 silicon nanocrystal(Si NC)의 전기적 특성을 분석하였다. Si NCs은 압축된 silicon powder를 laser로 분해하는 laser ablation 방식으로 제조되었고, sharpening oxidation 과정을 통하여 Si NC 주변에 oxide shell을 형성시켰다. 이 과정에서 Si NCs은 $10{\sim}50 nm$의 크기와 약 $10^{11}/cm^2$의 밀도로 $SiO_2$층에 증착되었다. SPM의 conducting tip을 통하여 전하는 각각의 Si NC로 주입되게 되고, 이로 인하여 발생하는 SCM image와 dC/dV curve의 변화를 통하여 Si NC에서 전하 거동을 모니터 하였다. 또한 국소영역에서 Si NC의 전기적 특성을 MOS capacitor 구조에서의 C-V 특성과 비교 분석하였다.

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