• Title/Summary/Keyword: SP6T Switch

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3:1 Bandwidth Switch Module by Using GaAs PH Diode (GaAs PIN Diode를 이용한 3:1 대역폭 스위치 모듈)

  • 정명득;이경학;박동철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.5
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    • pp.451-458
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    • 2002
  • Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

Implementation of Quad-Band p-HEMT SP6T Switch for Handset Applications (개인 휴대통신용 4중대역 p-HEMT SR6T 스위치 구현)

  • Shin, One-Chul;Jeong, In-Ho
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.48 no.1
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    • pp.97-101
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    • 2011
  • Quad band p-HEMT SP6T switch for handset applications was developed. To achieve the low insertion loss and high isolation, trade-off between "On" state and "Off" state was considered by optimization of unit cell. Especially, in case isolation between transmit port and receive port, it was achieved by large capacitors and miniaturization of chip size was achieved by common voltage control and ground using back via process. Designed SP6T switch has size of $950um{\times}100um$ and take into consideration the gate recess error, excellent loss and isolation was confirmed in operating frequency.

A Single-Pole, Eight-Throw, Radio-Frequency, MicroElectroMechanical Systems Switch for Multi-Band / Multi-Mode Front-End Module

  • Kang, Sung-Chan;Kim, Hyeon-Cheol;Chun, Kuk-Jin
    • Journal of Sensor Science and Technology
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    • v.20 no.2
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    • pp.77-81
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    • 2011
  • This paper presents a single-pole eight-throw(SP8T) switch based on proposed a radio-frequency(RF) microelectromechanical systems (MEMS) switches. The proposed switch was driven by a double stop(DS) comb drive, with a lateral resistive contact. Additionally, the proposed switch was designed to have tapered signal line and bi-directionally actuated. A forward actuation connects between signal lines and contact part, and the output becomes on-state. A reverse actuation connects between ground lines and contact part, and the output becomes off-state. The SP8T switch of 3-stage tree topology was developed based on an arrangement of the proposed RF MEMS switches. The developed SP8T switch had an actuation voltage of 12 V, an insertion loss of 1.3 dB, a return loss of 15.1 dB, and an isolation of 31.4 dB at 6 GHz.

Design and Fabrication of Low Loss, High Power SP6T Switch Chips for Quad-Band Applications Using pHEMT Process (pHEMT 공정을 이용한 저손실, 고전력 4중 대역용 SP6T 스위치 칩의 설계 및 제작)

  • Kwon, Tae-Min;Park, Yong-Min;Kim, Dong-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.6
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    • pp.584-597
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    • 2011
  • In this paper, low-loss and high-power RF SP6T switch chips are designed, fabricated and measured for GSM/EGSM/DCS/PCS applications using WIN Semiconductors 0.5 ${\mu}m$ pHEMT process. We utilized a combined configuration of series and series-shunt structures for optimized switch performance, and a common transistor structure on a receiver path for reducing chip area. The gate width and the number of stacked transistors are determined using ON/OFF input power level of the transceiver system. To improve the switch performance, feed-forward capacitors, shunt capacitors and parasitic FET inductance elimination due to resonance are actively used. The fabricated chip size is $1.2{\times}1.5\;mm^2$. S-parameter measurement shows an insertion loss of 0.5~1.2 dB and isolation of 28~36 dB. The fabricated SP6T switch chips can handle 4 W input power and suppress second and third harmonics by more than 75 dBc.

A High Power SP3T MMIC Switch (고출력 SP3T MMIC 스위치)

  • 정명득;전계익;박동철
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.5
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    • pp.782-787
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    • 2000
  • The monolithic single-pole three-throw(SP3T) GaAs PIN diode switch circuit for the broadband and high power application was designed, fabricated and characterized. To improve the power handling capability, buffer layers of the diode employ both low temperature buffer and superlattice buffer. The diode show the breakdown voltage of 65V and turn-on voltage of 1.3V. The monolithic integrated switch employed microstrip lines and backside via holes for low-inductance signal grounding. The vertical epitaxial PIN structure demonstrated better microwave performance than planar type structures due to lower parasitics and higher quality intrinsic region. As the large signal characteristics of the fabricated SP3T MMIC switch, the insertion loss was measured less than 0.6dB and the isolation better than 50dB when the input power was increased from 8dBM to 32dBm at 14.5GHz.

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Implementation of an LTCC RF Front-End Module Considering Parasitic Elements for Wi-Fi and WiMAX Applications (기생 성분을 고려한 Wi-Fi와 WiMAX용 LTCC 무선 전단부 모듈의 구현)

  • Kim, Dong-Ho;Baek, Gyung-Hoon;Kim, Dong-Su;Ryu, Jong-In;Kim, Jun-Chul;Park, Jong-Chul;Park, Chong-Dae
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.4
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    • pp.362-370
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    • 2010
  • In this paper, a compact RF Front-end module for Wireless Fidelity(Wi-Fi) and Worldwide Interoperability for Microwave Access(WiMAX) applications is realized by low temperature co-fired ceramic(LTCC) technology. The RF Front-end module is composed of three LTCC band-pass filters, a Film Bulk Acoustic Resonator(FBAR) filter, fully embedded matching circuits, an SPDT switch for mode selection, an SPDT switch for Tx/Rx selection, and an SP4T switch for band selection. The parasitic elements of 0.2~0.3 pF are generated by the structure of stacking in the top pad pattern for DC block capacitor of SPDT switch for mode selection. These kinds of parasitic elements break the matching characteristic, and thus, the overall electrical performance of the module is degraded. In order to compensate it, we insert a parallel lumped-element inductor on capacitor pad pattern for DC block, so that we obtain the optimized performance of the RF Front-end module. The fabricated RF front-end module has 12 layers including three inner grounds and it occupies less than $6.0mm{\times}6.0mm{\times}0.728mm$.

Design of 7 band LTCC Front-end module embedded LPF (LPF 내장형 7중 대역 LTCC 프런트엔드모듈 설계)

  • Kim, Hyung-Eun;Suh, Young-Kwang;Kim, In-Bae;Mun, Je-Do;Lee, Moon-Que
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1660-1661
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    • 2011
  • 본 논문에서는 7중 대역 (GSM850, GSM900, DCS1800, PCS1900, UMTS850, UMTS1900, UMTS2100) 을 지원하는 LPF 내장형 LTCC 프런트 엔드 모듈 (FEM) 을 설계, 제작 및 측정하였다. 제작된 FEM은 효과적인 고조파 제거를 위해 수동소자를 LTCC 기판에 내장하여 저역 통과 필터(LPF)를 구현하였다. 본 논문에서 제안하는 FEM은 송수신 신호를 선택하기 위한 flip-chip 형태의 CMOS RF SP9T switch, Rx 신호의 수신을 위한 dual type의 SAW filter, 매칭 및 ESD 보호 회로를 위한 0603 크기의 칩소자가 부품 외부에 실장되어 구현된다. 전체 크기는 $4.5{\times}3.2{\times}1.2\;mm^3$의 초소형으로 내부 GND 2개 층을 포함하여 총 16층으로 구성된다. 측정결과는 송신단과 수신단의 삽입손실이 각각 1.7 dB, 3.6 dB 이하의 우수한 특성을 보였다.

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1.8-GHz Six-Port-Based Impedance Modulator Using CMOS Technology (CMOS 공정을 이용한 1.8 GHz 6-포트 기반의 임피던스 변조기)

  • Kim, Jinhyun;Kim, Jeong-Geun
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.29 no.5
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    • pp.383-388
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    • 2018
  • This paper presents a 1.8 GHz six-port-based impedance modulator using CMOS technology, which can select an arbitrary load impedance with switch control. The proposed 1.8-GHz impedance modulator comprises a Wilkinson power divider, three quadrature hybrid couplers, and four SP3T switches for each load impedance selection. The measured insertion loss of -13 dB and the input/output return losses of >10 dB are achieved in the range of 1.4~2.2 GHz. The low drop output regulator for a stable 3.3 V DC power and the serial peripheral interface(SPI) for an easy digital control are integrated. The chip size, including the pads, is $1.7{\times}1.8mm^2$.

Quantification of Pre-parturition Restlessness in Crated Sows Using Ultrasonic Measurement

  • Wang, J.S.;Huang, Y.S.;Wu, M.C.;Lai, Y.Y.;Chang, H.L.;Young, M.S.
    • Asian-Australasian Journal of Animal Sciences
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    • v.18 no.6
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    • pp.780-786
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    • 2005
  • This study presents a non-video, non-invasive, automatic, on-site monitoring system the system employs ultrasonic transducers to detect behavior in sows before, during and after parturition. An ultrasonic transmitting/receiving (T/R) circuit of 40 kHz was mounted above a conventional parturition bed. The T/R units use ultrasonic time-of-flight (TOF) ranging technology to measure the height of the confined sows at eight predetermined locations. From this data, three momentary postures of the sow are determined, characterized as standing-posture (SP), lateral-lying-posture (LLP) and sitting posture (STP). By examining the frequencies of position switch Stand-Up-Sequence (SUS) between standing-posture (SP), lateral-lying-posture (LLP) and sitting-posture (STP) rate can be determined for the duration of the sow' confinement. Three experimental pureblooded Landrace sows undergoing normal gestation were monitored for the duration of confinement. In agreement with common observation, the sows exhibited increased restlessness as parturition approached. Analysis of the data collected in our study showed a distinct peak in Stand-Up-Sequence (SUS, i.e. the transition from lying laterally to standing up ) and sitting-posture (STP) rate approximately 12 h prior to parturition, the observed peak being 5 to 10 times higher than observed on any other measurement day. It is concluded that the presented methodology is a robust, low-cost, lowlabor method for the continuous remote monitoring of sows and similar large animals for parturition and other behavior. It is suggested that the system could be applied to automatic prediction of sow parturition, with automatic notification of remote management personnel so human attendance at birth could reduce rates of sow and piglet mortality. The results of this study provide a good basis for enhancing automation and reducing costs in large-scale sow husbandry and have applications in the testing of various large mammals for the effects of medications, diets, genetic modifications and environmental factors.