• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.31-38
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• 2002

In order to improve the 0.35 $mutextrm{m}$-via hole etching process the etching characteristic of the gas $C_2F_{6}$ has been analyzed. The samples were triple-layer films(TEOS/SOG/TEOS) on 8-inch wafers and the orthogonal array matrix technique was used for the process. The equipment for etching was the transformer coupled plasma (TCP) source which is a type of high density plasma(HDP). This experiment showed the etching rate for $C_2F_{6}$ was 0.8 $mutextrm{m}$/min-1.1 $mutextrm{m}$/min and the measured uniformity was under $pm$6.9% in the matrix window. The CD skew comparison between pre and post-etching was under 10% which is an outstanding results in the window of profile in anisotropic etching. There was no problem in C2F6 with the flow rate of 20sccm, but when 14sccm of $C_2F_{6}$ was supplied there was a recess problem on the inner wall of SOG film. Consequently the etching characteristic of $C_2F_{6}$ shows a fast etching rate and a very wide process window in HDP TCP.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.527-528
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• 2017

Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.

• Journal of KIISE:Software and Applications
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• v.31 no.12
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• pp.1581-1590
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• 2004

We present a robust off-line method recognizing handwritten digits by only using stroke direction codes as a feature of handwritten digits. This method makes general 8-direction codes for an input digit and then has the multi-layered neural networks learn them and recognize each digit. The 8-direction codes are made of the thinned results of each digit through SOG*(Improved Self-Organizing Graph). And the usage of these codes simplifies the complex steps processing at least two features of the existing methods. The experimental result shows that the recognition rates of this method are constantly better than 98.85% for any images in all digit databases.

• Information Display
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• v.5 no.1
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• pp.19-24
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• 2004

• Journal of Korean Electronics
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• v.23 no.12
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• pp.47-54
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• Electrical & Electronic Materials
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• v.19 no.9
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• pp.11-19
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• 2006

SLS crystallization and CMOS LTPS process have been developed for high performance and uniform characteristics. By strictly optimizing SLS optics in conventional 2 shot SLS process, threshold voltage variation of 720 pixel TFTs in 2.2-inch QVGA panel (240xRGB) was remarkably decreased from 1.89 V to 0.56 V of 3sigma value. Mobility of the channel doped NTFT and PTFT for circuits were $146\;and\;38cm^{2}/Vs$, respectively. Functional unit circuits for SOG were also fabricated and properly operated.

• Journal of Positioning, Navigation, and Timing
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• v.12 no.3
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• pp.257-269
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• 2023

This paper presents a method for detecting faults in data obtained from the Automatic Identification System (AIS) of surface vessels. The data include latitude, longitude, Speed Over Ground (SOG), and Course Over Ground (COG). We derive two methods that utilize two models: a constant state model and a derivative augmented model. The constant state model incorporates noise variables to account for state changes, while the derivative augmented model employs explicit variables such as first or second derivatives, to model dynamic changes in state. Generally, the derivative augmented model detects faults more promptly than the constant state model, although it is vulnerable to potentially overlooking faults. The effectiveness of this method is validated using AIS data collected at a harbor. The results demonstrate that the proposed approach can automatically detect faults in AIS data, thus offering partial assistance for enhancing navigation safety.

• Bulletin of the Korean Chemical Society
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• v.23 no.11
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• pp.1658-1660
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• 2002