• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.105-110
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• 2000

The $\alpha$-$Fa_{2}O_{3}/SnO_{2}$ thin film gas sensor was fabricated by APCVD and heat treated. The gas sensitivity to flammable gases ($CH_4$, $H_2$, LPG) was measured. This device was to heat treatment at $400^{\circ}C$, $450^{\circ}C$, $500^{\circ}C$, $550^{\circ}C$, $600^{\circ}C$ for 2 h to enhance the gas sensitivity. The heat treated device at $500^{\circ}C$ for 2 h had the best properties and especially it shows high sensitivity to H2 gas. The sensitivity to gases was studied in the temperature range from lOoC to $300^{\circ}C$ in order to find the optimum detection temperature. In the range of detection from 500 ppm to 10,000 ppm at $175^{\circ}C$ the fabricated device showed that the gas sensitivity to $H_2$ was from 62%~76% and to $CH_4$ was from 16 %~58% and to LPG was from 8%~37 %. The sensitivity difference between heat treated device and as fabricated one was about 10 8 The long-term stability to LPG at 1,000 ppm was converged to sensitivity of 30 %.

• Korean Journal of Food Science and Technology
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• v.19 no.6
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• pp.550-555
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• 1987

Strain gauges attached on the Bourdon tube and load cell were used as the sensors for measuring the vacuum pressure in drying chamber and the weight loss of Shiitake mushrooms respectively. The vacuum drying system was interfaced further with the Bear II microcomputer. The interface devices used were built with such IC chips as MC 6821, ADC 0809, SN 74244 and SN 7424. The relationship between readings of vacuum gauge (P, mmHg) and digital outputs (D) from the microcomputer was represented by P =3.08 D-13.4875(r=0.9999). The weights of drying sample (W) were also related with the digital outputs (D) by W=0.4076 D-6.4762 (r=0.9999). During the vacuum drying of Shiitake mushrooms. the data on pressure and weight were recorded at regular intervals using an acquisition program on the microcomputer system. The Page model was fitted well to the drying data of Shiitake mushrooms. resulting in the following empirical equations : $(M-M_e)/(M_o-M_e)=\exp(-0.1569t^{1.0048})$ at 400 mm Hg up to 14 hours and $(M-M_e)/(M_o-M_e)=\exp(-0.1385_t^{1.2688})$ at 600 mm Hg up to 8 hours.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.171-171
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• 2013

최근에 희토류 이온이 도핑된 형광체를 램프, 플라즈마, 디스플레이 패널, 음극선관, 광전 소자에 응용하기 위한 연구에 많은 노력이 경주되고 있다. 특히 희토류 이온은 4f-껍질에 존재하는 전자의 독특한 성질 때문에 좁은 밴드폭과 강한 발광 특성을 나타내므로 발광 다이오드, 자석, 촉매, 디스플레이 패널용 형광체로 개발되고 있다, 본 연구에서는 고효율의 녹색과 적색 형광체를 개발하기 위하여 모체 결정은 SrSnO3, 활성제 이온은 Eu (유로퓸) 와 Tb (테르븀)을 선택하여 도핑하였다. 합성된 형광체 분말의 회절상을 XRD로 측정한 결과에 의하면, Eu3+와 Tb3+의 함량비에 관계없이 모든 세라믹 분말은 JCPDS #74-1298에 제시된 회절상과 일치하였으며, 주 피크는 $31.3^{\circ}$, $44.9^{\circ}$, $55.8^{\circ}$에서 최대값을 갖는 (110), (200), (211)면에서 발생한 회절 신호이며, 이밖에도 $22.04^{\circ}$, $65.4^{\circ}$, $74.3^{\circ}$에서 약한 회절 피크를 갖는 (100), (220), (013)면의 신호들이 관측되었다. Eu3+ 이온의 함량비가 0.05 mol 인 경우에 (110)과 (211) 피크의 세기가 최대값을 나타내었고, Eu3+의 함량비가 증가함에 따라 두 피크의 세기는 점점 감소하였다. XRD의 데이터를 Scherrer의 식에 대입하여 계산한 결정 입자의 크기는 Eu3+ 이온이 도핑된 경우에는 0 mol에서 최소의 크기를 나타내었고, Tb3+ 이온이 도핑된 경우에 입자의 크기는 0.05 mol에서 최소이었고 0 mol에서 최대값을 보였다. SEM으로 촬영한 표면 형상의 변화를 관측한 결과, Eu3+의 함량비가 0.15 mol인 경우에, 결정 입자의 평균 크기는 400~450nm이며, Tb3+의 함량비가 0.05 mol인 경우에, 결정 입자의 평균 크기는 270~290nm 이었으며, 입자의 형상은 균일하게 분포하는 구형 형태을 보였다. Eu3+와 Tb3+ 이온의 함량비가 점점 증가함에 따라 미립자들이 서로 뭉쳐져서 각각 약 720 nm와 580 nm의 크기를 갖는 큰 입자를 형성하였고, 불규칙적인 분포를 나타내었다. 여기 파장 293 nm에서 Tb3+가 도핑된 SrSnO3:Tb3+ 형광체 분말의 발광 스펙트럼을 측정한 결과에 의하면, Tb3+의 함량비에 관계없이 모든 시료는 주 피크인 550 nm (녹색)와 상대적으로 세기가 약한 500, 590, 630 nm에서 발광 스펙트럼을 나타내었다. 주 피크의 발광 세기는 0.01 mol~0.15 mol에서는 증가 하였고, 더욱 함량비를 증가함에 따라 급격하게 감소하였다. 이 현상은 활성제 이온의 mol 비가 증가함에 따라 이온 사이의 거리가 가까워져서 서로 뭉치는 현상이 주도적으로 작용하여 발광의 세기가 현저히 감소하는 것으로 판단된다. 0.10 mol 일 때 세기가 가장 강한 녹색 형광 신호를 얻었다. 여기 파장 400nm에서 Eu3+가 도핑된 SrSnO3:Eu3+ 형광체 분말의 형광 스펙트럼은 Eu3+의 함량비에 관계없이 590, 619, 696 nm에서 관측되었다. Eu3+의 몰 비가 0.01~0.05 mol 영역에서 619 nm가 주 피크이나, 몰 비가 더욱 증가함에 다라 주 피크의 파장은 590 nm로 이동하였다. 한편, 696 nm의 발광세기는 몰 비가 증가함에 따라 더욱 증가하였다.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.879-888
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• 2001

The effects of final annealing temperature on the microstructure and creep characteristics were investigated for the Zr-lNb-0.2X (X=0, Mo, Cu) and Zr-lNb- 1Sn-0.3Fe-0.1X (X=0, Mo, Cu) alloys. The microstructures were observed by using TEM/EDS, and grain size and distributions of precipitates were analyzed using a image analyzer. The creep test was performed at $400^{\circ}C$ under applied stress of 150 MPa for 10 days. The $\beta$-Zr was observed at annealing temperature above $600^{\circ}C$. In the temperature above$ 600^{\circ}C$, the grain sizes of both alloy systems appeared to be increased with increasing the final annealing temperature. The creep strengths of Zr-1Nb-1Sn-0.3Fe-0.1X alloys were higher than those of Zr-1Nb-0.2X ones due to the effect of solid solution hardening by Sn in Zr-lNb-lSn-0.3Fe-0.1X alloy system. Also, Mo addition showed the strong effect of precipitate hardening in both alloy systems. The creep strength rapidly decreased with increasing the annealing temperature up to $600^{\circ}C$. However, a superior creep resistance was obtained in the sample that annealed to have a second phase of $\beta$-Zr. It was considered that the appearance of $\beta$-Zr would play an important role in the strengthening mechanism of creep deformation.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.4
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• pp.435-442
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• 2004

This paper presents a hermetic MEMS on-chip package bonded by a closed-loop AuSn solder-line. We design three different package specimens, including a substrate heated specimen without interconnection-line (SHX), a substrate heated specimen with interconnection-line (SHI) and a locally heated specimen with interconnection-line (LHI). Pressurized helium leak test has been carried out for hermetic seal evaluation in addition to the critical pressure test for bonding strength measurement. Substrate heating method (SHX, SHI) requires the bonding time of 40min. at 400min, while local heating method (LHI) requires 4 min. at the heating power of 6.76W. In the hermetic seal test. SHX, SHI and LHI show the leak rates of 5.4$\pm$6.7${\times}$$^{-10}$ mbar-l/s, 13.5$\pm$9.8${\times}$$^{-10}$ mbar-l/s and 18.5$\pm$9.9${\times}$$^{-10}$ mbar-l/s, respectively, for an identical package chamber volume of 6.89$\pm$0.2${\times}$$^{-10}$. In the critical pressure test, no fracture is found in the bonded specimens up to the applied pressure of 1$\pm$0.1MPa, resulting in the minimum bonding strength of 3.53$\pm$0.07MPa. We find that the present on-chip packaging using a closed AuSn solder-line shows strong potential for hermetic MEMS packaging with interconnection-line due to the hermetic seal performance and the shorter bonding time for mass production.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.11
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• pp.9-17
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• 2000

A sensor array with 10 discrete sensors integrated on a substrate was developed for discriminating the kinds and quantities of explosive gases. The sensor array consisted of 10 oxide semiconductor gas sensors with $SnO_2$ as base material and had broad sensitivity to specific gas. The sensor array was designed with uniform thermal distribution and had also high sensitivity and reproductivity to low gas concentration through nano-sized sensing materials with different additives. By using the sensitivity signal of the sensor array at $400^{\circ}C$, we could reliably discriminate the kinds and quantities of explosive gases like butane, propane and methane under the lower explosion limit through the principal component analysis (PCA) method.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.108-117
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• 2001

A sensor array with 10 discrete sensors integrated on a substrate w3s developed for discriminating the kinds and quantities of inflammable gases, like butane, propane, methane, LPG, carbon monoxide. The sensor array consisted of 10 metal oxide semiconductor gas sensors using the nano-sized $SnO_2$ as base material and had differentiated sensitivity patterns to specific gas. The sensor array was designed with uniform thermal distribution and had also high sensitivity and good reproductivity to low gas concentration through nano-sized sensing materials with different additives. By using the sensing patterns of the sensor array at $400^{\circ}C$, we could reliably discriminate the kinds and quantities of the tested inflammable gases under the lower explosion limit through the principal component analysis(PCA).

• Journal of Sensor Science and Technology
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• v.5 no.6
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• pp.7-14
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• 1996

In order to develop gas sensor operating at low temperature, thick film $Co_{3}O_{4}$ sensor was fabricated. $Co_{3}O_{4}$ powder was prepared by precipitation from cobalt nitrate solution and the powders containing ethylene glycol as a binder was screen-printed on alumina substrate. Characteristics of sensitivity, response time, and recovery were investigated in terms of binder content and heat treating conditions. The $Co_{3}O_{4}$ sensor contained 15% ethylene glycol and heat-treated at $300^{\circ}C$ for 24hr showed the highest sensitivity at the operating temperature of $250^{\circ}C$. Its sensitivity of 1.1 to 5000ppm butane gas was very high, as compared with $0.8{\sim}0.85$ at the operating temperature of $350{\sim}400^{\circ}C$ for a commercial $SnO_{2}$ gas sensor. It is found that response time was fast, but recovery was poor for the sensor.