• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.4
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• pp.262-269
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• 2005

Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

• The Magazine of the IEIE
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• v.37 no.3
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• pp.61-70
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• 2010

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.61-71
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• 2014

As the occupancy rate of the flash memory increases in the storage media market for the embedded system and the semi-conductor industry grows, the demand and supply of flash memory is increasing by a big margin. They are especially used in large quantity in the smart phones, tablets, PC, SSD and Soc(System on Chip) etc. The flash memory is divided into the NOR type and NAND type according to the cell arrangement structure and the NAND type is divided into the SLC(Single Level Cell) and MLC(Multi Level Cell) according to the number of bits that can be stored in each cell. Many tests have been performed on NOR type such as BIST(Bulit-In Self Test) and BIRA(Bulit-In Redundancy Analysis) etc, but there is little study on the NAND type. For the case of the existing BIST, the test can be proceeded using external equipments like ATE of high price. However, this paper is an attempt for the improvement of credibility and harvest rate of the system by proposing the BIST for the MLC NAND type flash memory of Finite State Machine structure on which the pattern test can be performed without external equipment since the necessary patterns are embedded in the interior and which uses the MLC NAND March(x) algorithm and pattern which had been proposed for the MLC NAND type flash memory.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.72-82
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• 2014

Recently, the size of semiconductor industry market is constantly growing, due to the increase in diffusion of smart-phone, tablet PC and SSD(Solid State Drive). Also, it is expected that the demand for TLC NAND-type flash memory would gradually increase, with the recent release of TLC NAND-type flash memory in the SSD market. There have been a lot of studies on SLC NAND flash memory, but no research on TLC NAND flash memory has been conducted, yet. Also, a test of NAND-type flash memory is depending on a high-priced external equipment. Therefore, this study aims to suggest a structure for an autonomous test with no high-priced external test device by modifying the existing SLC NAND flash memory and MLC NAND flash memory test algorithms and patterns and applying them to TLC NAND flash memory.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.9
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• pp.54-62
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• 2015

Although NAND flash-based SSD (Solid-State Drive) provides superior performance in comparison to HDD (Hard Disk Drive), it has a major drawback in write endurance. As a result, the lifetime of SSD is determined by the workload and thus it becomes a big challenge in current technology trend of such as the shifting from SLC (Single Level Cell) to MLC (Multi Level cell) and even TLC (Triple Level Cell). Most previous studies have dealt with wear-leveling or improving SSD lifetime regarding hardware architecture. In this paper, we propose the optimal configuration of host I/O stack focusing on file system, I/O scheduler, and link power management using JEDEC enterprise workloads in terms of WAF (Write Amplification Factor) which represents the efficiency perspective of SSD life time especially for host write processing into flash memory. Experimental analysis shows that the optimum configuration of I/O stack for the perspective of SSD lifetime is MinPower-Dead-XFS which prolongs the lifetime of SSD approximately 2.6 times in comparison with MaxPower-Cfq-Ext4, the best performance combination. Though the performance was reduced by 13%, this contributions demonstrates a considerable aspect of SSD lifetime in relation to I/O stack optimization.

• Journal of KIISE:Computing Practices and Letters
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• v.15 no.12
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• pp.913-917
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• 2009

Flash memories have asymmetric I/O costs for read and write in terms of latency and energy consumption. However, the ratio of these costs is dependent on the type of storage. Moreover, it is becoming more common to use two flash memories on a system as an internal memory and an external memory card. For this reason, buffer cache replacement algorithms should consider I/O costs of device as well as possibility of reference. This paper presents WWCLOCK(Write-Weighted CLOCK) algorithm which directly uses I/O costs of devices along with recency and frequency of cache blocks to selecting a victim to evict from the buffer cache. WWCLOCK can be used for wide range of storage devices with different I/O cost and for systems that are using two or more memory devices at the same time. In addition to this, it has low time and space complexity comparable to CLOCK algorithm. Trace-driven simulations show that the proposed algorithm reduces the total I/O time compared with LRU by 36.2% on average.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.18 no.6
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• pp.43-59
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• 2019

The Traffic controller currently used in Korea is a switch control system that directly transfers 220V of high voltage to traffic lights one to one. This method requires a lot of cables, and there are concerns about electric shock. Accordingly, Korea Road Traffic Authority added the digital communication signal controller standard using digital communication method to the standard specification of the communication signal controller of the National Police Agency. Based on these specifications, this paper intended to develop digital communication call controllers. In addition, it was verified that even if the digital communication signal controller and analogue communication call controller were mixed, they could operate in the signal control system currently in operation.