• Title/Summary/Keyword: SLC Buffer

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SLC Buffer Performance Improvement using Page Overwriting Method in TLC NAND Flash-based Storage Devices (TLC 낸드 플래시기반 저장 장치에서 페이지 중복쓰기 기법을 이용한 SLC 버퍼 성능향상 연구)

  • Won, Samkyu;Chung, Eui-Young
    • Journal of the Institute of Electronics and Information Engineers
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    • v.53 no.1
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    • pp.36-42
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    • 2016
  • In multi-level-cell based storage devices, TLC NAND has been employed solid state drive due to cost effectiveness. Since TLC has slow performance and low endurance compared with MLC, TLC based storage has adopted SLC buffer scheme to improve performance. To improve SLC buffer scheme, this paper proposes page overwriting method in SLC block. This method provides data updates without erase operation within a limited number. When SLC buffer area is filled up, FTL should execute copying valid pages and erasing it. The proposed method reduces erase counts by 50% or more compared with previous SLC buffer scheme. Simulation results show that the proposed SLC buffer overwrite method achieves 2 times write performance improvement.

Adaptive Garbage Collection Technique for Hybrid Flash Memory (하이브리드 플래시 메모리를 위한 적응적 가비지 컬렉션 기법)

  • Im, Soo-Jun;Shin, Dong-Kun
    • The KIPS Transactions:PartA
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    • v.15A no.6
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    • pp.335-344
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    • 2008
  • We propose an adaptive garbage collection technique for hybrid flash memory which has both SLC and MLC. Since SLC area is fast and MLC area has low cost, the proposed scheme utilizes the SLC area as log buffer and the MLC area as data block. Considering the high write cost of MLC flash, the garbage collection for the SLC log buffer moves a page into the MLC data block only when the page is cold or the page migration invokes a small cost. The other pages are moved within the SLC log buffer. Also it adjusts the parameter values which determine the operation of garbage collection adaptively considering I/O pattern. From the experiments, we can know that the proposed scheme provides better performance compared with the previous flash management schemes for the hybrid flash and finds the parameter values of garbage collection close to the optimal values.

A Novel Memory Hierarchy for Flash Memory Based Storage Systems

  • Yim, Keno-Soo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.5 no.4
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    • pp.262-269
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    • 2005
  • Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

Effect of the driving capability of CMOS buffer on the signal transmission in MCM interconnects (MCM배선에서 CMOS 버퍼의 구동력이 신호전송에 미치는 영향)

  • 주철원
    • Journal of the Microelectronics and Packaging Society
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    • v.5 no.2
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    • pp.13-20
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    • 1998
  • 고속 디지털 MCM 응용을 위해 MCM-D 와 MCM-SLC 배선에서 CMOS 버퍼의 신호상승시간에 따른 신호전송특성을 연구하였다. 고속신호처럼 버퍼의 내부저항이 배선의 임피던스보다 작아 발생하게 되는 과도한 ringing은 MCM-D와 같이 lossy line의 전송감쇠 효과로 overshooting 이나 undershooting을 줄일 수 있지만 ringing에 의한 신호왜곡을 근 본적으로 막기위해서는 CMOS버퍼와 배선사이에 적절한 종단을 통해 임피던스 비해 크면 배선의 캐패시턴스에 의해 RC 지연이 증가한다. 그런데 MCM-D 배선은 단위길이당 캐패 시턴스도 작고 배선길이를 줄일수 있으므로 총 RC 지연은 MCM-SLC보다 작았다. 결론적 으로 MCM-D 배선이 MCM-SLC 배선에 비해 고속 디지털 MCM기판으로 적합한 것을 알 수 있었다.

WWCLOCK: Page Replacement Algorithm Considering Asymmetric I/O Cost of Flash Memory (WWCLOCK: 플래시 메모리의 비대칭적 입출력 비용을 고려한 페이지 교체 알고리즘)

  • Park, Jun-Seok;Lee, Eun-Ji;Seo, Hyun-Min;Koh, Kern
    • Journal of KIISE:Computing Practices and Letters
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    • v.15 no.12
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    • pp.913-917
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    • 2009
  • Flash memories have asymmetric I/O costs for read and write in terms of latency and energy consumption. However, the ratio of these costs is dependent on the type of storage. Moreover, it is becoming more common to use two flash memories on a system as an internal memory and an external memory card. For this reason, buffer cache replacement algorithms should consider I/O costs of device as well as possibility of reference. This paper presents WWCLOCK(Write-Weighted CLOCK) algorithm which directly uses I/O costs of devices along with recency and frequency of cache blocks to selecting a victim to evict from the buffer cache. WWCLOCK can be used for wide range of storage devices with different I/O cost and for systems that are using two or more memory devices at the same time. In addition to this, it has low time and space complexity comparable to CLOCK algorithm. Trace-driven simulations show that the proposed algorithm reduces the total I/O time compared with LRU by 36.2% on average.

Condition Setting for Oral Mucosal Irritation Evaluation using Hamster Cheek Pouch (햄스터 볼주머니를 이용한 구강점막 자극평가 조건설정)

  • Park, Kyo-Hyun;Kim, Kwang-Mahn;Kim, Bae-Hwan
    • Journal of Environmental Health Sciences
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    • v.41 no.6
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    • pp.405-411
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    • 2015
  • Objectives: The purpose of this study is to evaluate the optimum conditions for oral mucosal irritation testing using the buccal pouch of hamsters. Methods: Test materials were applied to the buccal pouch of seven-week old male Syrian hamsters (SLC, Japan) four times at one-hour intervals and macroscopic changes were examined at 24 hours after final treatment. After sacrifice, the buccal pouches were removed and prepared for histopathological evaluation. In order to set the exposure time, we performed exposure tests of 5, 12, 18 and 23 minutes using sodium lauryl sulfate (SLS) 1% and set the treatment volume from the test results at 2, 3, or 4 ml treatment using SLS 1%, Triton X-100 1% and ethanol. After setting the experimental conditions, seven groups of materials [sodium lauryl sulfate (SLS) (1%), Triton X-100 (1%), hydrogen peroxide (3%), ethanol (100%), chlorhexidine (0.2%, 2%), phosphate buffer saline (PBS)] were assessed. Results: Experimental conditions of material exposure time were fixed as 18 minutes from the exposure tests of 5, 12, 18 or 23 min using sodium lauryl sulfate (SLS) 1%. Treated volume was set as 4 ml per each pouch from the test results of 2, 3, or 4 ml treatments using SLS 1%, Triton X-100 1% and ethanol. The results in terms of irritation degree were in the order of sodium lauryl sulfate (SLS) (1%) > Triton X-100 (1%) ${\fallingdotseq}$ hydrogen peroxide (3%) > ethanol (100%) ${\fallingdotseq}$ chlorhexidine (0.2%, 2%) > phosphate buffer saline (PBS). Conclusion: From this study, suitable conditions for hamster mucosal irritation testing were suggested and this method was verified through materials commonly used on oral mucosal membranes.