• 한국터널지하공간학회 논문집
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• 제15권6호
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• pp.547-557
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• 2013

전단응력에 의한 전단강도 및 모드 II 파괴인성은 이산화탄소 지중저장에서의 덮개암 및 주입층의 안정성 평가에 활용되는 중요한 인자들이다. 본 연구에서는 짧은 보 압축시험을 이용하여 코코니노 사암의 전단강도 및 모드 II 파괴인성을 측정하였다. 측정된 평균 전단강도는 23.53 MPa이며, 모드 II 파괴인성은 1.58 MPa${\surd}$m이다. 응력확대계수(stress intensity factor)는 변위외삽법(displacement extrapolation method)을 이용한 유한요소법으로 결정하였다. 또한 이축응력(biaxial stress)과 수분포화(water saturation)가 모드 II 파괴인성에 미치는 영향을 분석하였다. 그 결과 이축응력이 증가할수록 파괴인성도 증가하였고, 완전포화된 시험편의 파괴인성은 건조상태의 파괴인성보다 대략 11.4% 감소하였다.

• 한국재료학회지
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• 제18권10호
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• 한국통신학회논문지
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• 제22권2호
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• pp.259-267
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• 1997

The advent of B-ISDN using ATM(asynchronous transfer mode) made possible a variety of new multimedia services, however it also created a problem of congestion control due to bursty nature of various traffic sources. To tackle this problem, UPC/NPC(user parameter control/network parameter control) have been actively studied and DRLB(dynamic rate leaky bucket) algorithm, in which the token generation rate is changed according to states of data source andbuffer occupancy, is a good example of the UPC/NPC. However, the DRLB algorithm has drawbacks of low efficiency and difficult real-time implementation for bursty traffic sources because the determination of token generation rate in the algorithm is based on the present state of network. In this paper, we propose a more plastic and effective congestion control algorithm by combining the DRLB algorithm and neural network based prediction to remedy the drawbacks of the DRLB algorithm, and verify the efficacy of the proposed method by computer simulations.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.267-268
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• 2008

TD-SCDMA is considered as an innovative Chinese 3G technology adopted by the ITU for the IMT-2000 family. TD-SCDMA combines TDMA and CDMA components to provide more efficient use of radio resources. According to the traffic volume and activity level, the operation mode of a mobile terminal can change from one state to other states. This paper focuses on the problem of recovery delay from inactive states, and proposes a resource management algorithm, which holds some resources for rapid recovery of service after the service determines to release the dedicated resources.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2002년도 가을 학술발표회 논문집
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• pp.11-16
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• 2002

The differential equations governing free vibrations of the elastic, horizontally curved beams with unsymmetric axis are derived in Cartesian coordinates rather than in polar coordinates, in which the effect of torsional inertia is included. Frequencies are computed numerically for the sinusoidal curved beams with both clamped ends and both hinged ends. Comparisons of natural frequencies between this study and SAP 2000 are made to validate theories and numerical methods developed herein. The convergent efficiency is highly improved under the newly derived differential equations in Cartesian coordinates. The lowest four natural frequency parameters are reported, with and without torsional inertia, as functions of three non-dimensional system parameters: the horizontal rise to chord length ratio, the span length to chord length ratio, and the slenderness ratio.

• 터널과지하공간
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• 제31권6호
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• pp.440-459
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• 2021

최근 대형 로드헤더가 국내 터널현장에 도입되면서 해외 제조사의 굴진율 예측모델에 대한 관심이 증가하고 있다. 현재 주로 사용되는 해외모델은 압축강도로부터 굴진율을 예측하고 있는데, 암석 시험편의 직경 대 길이의 비율이 1.0인 시편을 일축압축시험으로 사용하고 있다. 일반적으로 시편의 형상과 치수는 강도에 영향을 미치는 것으로 알려져 있다. 본 기술보고에서는 직경 대 길이 비율에 따른 암석강도의 변화에 대한 기존 연구사례를 조사하였다. 그 형상효과에 대한 원인을 이론적으로 고찰하였다. 이를 토대로 국내 예정된 암종에 대해서 길이 비율에 따른 강도의 변화 양상을 예측하고 굴진율 수정모델을 제시하였다.

• 전기전자학회논문지
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• 제19권4호
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• pp.573-582
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• 2015

본 논문은 에너지 하베스팅용 이중 모드 부스트 컨버터 설계에 관한 것이다. 설계된 회로는 에너지 하베스팅에 의해 출력된 작은 전압으로부터 startup 회로를 통해 승압된 전압을 얻는다. 이 전압이 일정 전압 이상이 되면, 전압 감지기에 의해 startup 회로에 공급되는 전압이 차단이 된다. 승압된 전압은 부스트 컨트롤러에 의해 최종적으로 $V_{OUT}$이 된다. 회로는 크게 전하 펌프를 위한 오실레이터, 전하 펌프, 펄스 생성기, 전압 감지기, 부스트 컨트롤러로 구성되어있다. 매그나칩 / SK하이닉스의 $0.18{\mu}m$ CMOS 공정을 사용하였다. 설계된 회로는 테스트 결과 최소 입력 전압은 600mV이며, 출력은 3V이고, startup time은 20ms이다. 제작된 부스트 컨버터의 효율은 load current가 3mA일때, 47%로 측정되었다.

• Asia pacific journal of information systems
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• 제6권2호
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• pp.107-124
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• 1996

본 연구에서는 인터넷 환경에서 그룹의사결정시스템(GDSS)을 활용하기 위해 현재의 인터넷 기능개선 방향에 대해 분석하였다. 이를 위해 먼저 그룹의사결정지시스템의 요구사항을 기존의 문헌을 통해 정보전달, 의사결정 지원 정보제공 및 정보전달 흐름제어로 분류하였다. 다음에는 각 분야별로 현재의 인터넷이 가지고 있는 한계를 분석하고 이러한 한계를 극복할 수 있는 기술적인 대안들을 OSI 계층별로 분석하였다. 분석결과 현재의 인터넷에서 응용 프로그램과 TCP/IP계층 사이에 전달정보흐름 추적기능(Tracing), 응용 프로그램 코딩기능(Application Dependent Coding), 정보전달모드 제어기능(communication Mode Selection) 및 정보보안기능(Encoding/Decoding)이 추가되는 것으로 분석되었다. 또한 링크계층에는 셀교환 방식이 적합한 것으로 분석되었다. 본 연구의 결과는 그룹의사결정지원시스템 디자인 및 향후 인터넷 화상회의를 위한 시스템 디자인에서도 유용하게 적용될 수 있을 것으로 판단된다.

• 신재생에너지
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• 제17권1호
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• pp.19-32
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• 2021

Photovoltaic (PV) panels are generally treated as the most dependable components of PV systems; therefore, investigations are necessary to understand and emphasize the degradation of PV cells. In almost all specific deprivation models, humidity and temperature are the two major factors that are responsible for PV module degradation. However, even if the degradation mode of a PV module is determined, it is challenging to research them in practice. Long-term response experiments should thus be conducted to investigate the influences of the incidence, rates of change, and different degradation methods of PV modules on energy production; such models can help avoid lengthy experiments to investigate the degradation of PV panels under actual working conditions. From the review, it was found that the degradation rate of PV modules in climates where the annual average ambient temperature remained low was -1.05% to -1.16% per year, and the degree of deterioration of PV modules in climates with high average annual ambient temperatures was -1.35% to -1.46% per year; however, PV manufacturers currently claim degradation rates of up to -0.5% per year.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.298-298
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• 2014

Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.