• Journal of Korean Tunnelling and Underground Space Association
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• v.15 no.6
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• pp.547-557
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• 2013

The mode II fracture toughness and strength due to shear stress are important parameters in the stability of caprock and injection zone with application to geological sequestration of carbon dioxide. In this research, a short beam compression test has been used to determine the shear strength and the mode II fracture toughness for Coconino sandstone. The average value of the shear strength and mode II fracture toughness are estimated to be 23.53 MPa and 1.58 MPa${\surd}$m respectively. The stress intensity factor is suggested by finite element analysis using the displacement extrapolation method. The effect of biaxial stress and water saturation on the fracture toughness has also been investigated. The fracture toughness increases with confining stresses, but decreases by 11.4% in fully saturated condition.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.2
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• pp.259-267
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• 1997

The advent of B-ISDN using ATM(asynchronous transfer mode) made possible a variety of new multimedia services, however it also created a problem of congestion control due to bursty nature of various traffic sources. To tackle this problem, UPC/NPC(user parameter control/network parameter control) have been actively studied and DRLB(dynamic rate leaky bucket) algorithm, in which the token generation rate is changed according to states of data source andbuffer occupancy, is a good example of the UPC/NPC. However, the DRLB algorithm has drawbacks of low efficiency and difficult real-time implementation for bursty traffic sources because the determination of token generation rate in the algorithm is based on the present state of network. In this paper, we propose a more plastic and effective congestion control algorithm by combining the DRLB algorithm and neural network based prediction to remedy the drawbacks of the DRLB algorithm, and verify the efficacy of the proposed method by computer simulations.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.267-268
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• 2008

TD-SCDMA is considered as an innovative Chinese 3G technology adopted by the ITU for the IMT-2000 family. TD-SCDMA combines TDMA and CDMA components to provide more efficient use of radio resources. According to the traffic volume and activity level, the operation mode of a mobile terminal can change from one state to other states. This paper focuses on the problem of recovery delay from inactive states, and proposes a resource management algorithm, which holds some resources for rapid recovery of service after the service determines to release the dedicated resources.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2002.10a
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• pp.11-16
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• 2002

The differential equations governing free vibrations of the elastic, horizontally curved beams with unsymmetric axis are derived in Cartesian coordinates rather than in polar coordinates, in which the effect of torsional inertia is included. Frequencies are computed numerically for the sinusoidal curved beams with both clamped ends and both hinged ends. Comparisons of natural frequencies between this study and SAP 2000 are made to validate theories and numerical methods developed herein. The convergent efficiency is highly improved under the newly derived differential equations in Cartesian coordinates. The lowest four natural frequency parameters are reported, with and without torsional inertia, as functions of three non-dimensional system parameters: the horizontal rise to chord length ratio, the span length to chord length ratio, and the slenderness ratio.

• Tunnel and Underground Space
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• v.31 no.6
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• pp.440-459
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• 2021

Roadheaders have begun to be adopted in Korean tunneling sites. The performance prediction models proposed by the manufacturer are used by Korean construction companies. The models use UCS (uniaxial compressive strength) value to predict the net cutting rate, but the rock specimens conducted for the uniaxial compression test have 1.0 of the diameter to length ratio. It has been reported that the specimen shape generally influences the rock strength. The previous references studying the shape effect were cited, and the UCS data of Korean rocks are also updated to analyze the shape effect on UCS. The cause of effect was discussed by previous theory. The change amount of UCS values of Korean rocks was estimated by the data, and the modified prediction model for NCR was finally suggested.

• Journal of IKEEE
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• v.19 no.4
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• pp.573-582
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• 2015

This paper presents the design of dual mode boost converter for energy harvesting. The designed converter boosts low voltage from energy harvester through a startup circuit. When the voltage goes above predefined value, supplied voltage to startup circuit is blocked by voltage detector. Boost controller makes the boosted voltage into $V_{OUT}$. The proposed circuit consists of oscillator for charge pump, charge pump, pulse generator, voltage detector, and boost controller. The proposed converter is designed and fabricated using a $0.18{\mu}m$ CMOS process. The designed circuit shows that minimum input voltage is 600mV, output is 3V and startup time is 20ms. The boost converter achieves 47% efficiency at a load current of 3mA.

• Asia pacific journal of information systems
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• v.6 no.2
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• pp.107-124
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• 1996

This research studied future directions of Internet technology toward supporting group decision making. From the previous research, this study classified requirements of group decision support systems into three categories which are information transfer, information provision, and communication control. For each of the category, this study analyzed the limits of current Internet functions. Next, this research discussed technological solutions, for each of the OSI 7 layers, toward supporting group decision making. Additional functions in Internet which are required for group supporting are tracing communications, application dependent coding, selection of communication modes, and security handling. For high speed data communication in Internet, this research discussed the potential of cell-switching technology for the lower level link in Internet. The conclusions of this research can be used for designing future group decision support systems and development of Internet.

• New & Renewable Energy
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• v.17 no.1
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• pp.19-32
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• 2021

Photovoltaic (PV) panels are generally treated as the most dependable components of PV systems; therefore, investigations are necessary to understand and emphasize the degradation of PV cells. In almost all specific deprivation models, humidity and temperature are the two major factors that are responsible for PV module degradation. However, even if the degradation mode of a PV module is determined, it is challenging to research them in practice. Long-term response experiments should thus be conducted to investigate the influences of the incidence, rates of change, and different degradation methods of PV modules on energy production; such models can help avoid lengthy experiments to investigate the degradation of PV panels under actual working conditions. From the review, it was found that the degradation rate of PV modules in climates where the annual average ambient temperature remained low was -1.05% to -1.16% per year, and the degree of deterioration of PV modules in climates with high average annual ambient temperatures was -1.35% to -1.46% per year; however, PV manufacturers currently claim degradation rates of up to -0.5% per year.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.298-298
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• 2014

Quantum dot infrared photodetectors (QDIPs) based on Stranski-Krastanov (SK) quantum dots (QDs) have been widely explored for improved device performance using various designs of heterostructures. However, one of the biggest limitations of this approach is the "pancake" shape of the dot, with a base of 20-30 nm and a height of 4-6 nm. This limits the 3D confinement in the quantum dot and reduces the ratio of normal incidence absorption to the off-axis absorption. One of the alternative growth modes to the formation of SK QDs is a sub-monolayer (SML) deposition technique, which can achieve a much higher density, smaller size, better uniformity, and has no wetting layer as compared to the SK growth mode. Due to the advantages of SML-QDs, the SML-QDIP design has attractive features such as increased normal incidence absorption, strong in-plane quantum confinement, and narrow spectral wavelength detection as compared with SK-DWELL. In this study, we report on the improved device performance of InAs/InGaAs SML-QDIP with different composition of $Al_xGa1-_xAs$ barrier. Two SML-QDIPs (x=0.07 for sample A and x=0.20 for sample B) are grown with the 4 stacks 0.3 ML InAs. It is investigated that sample A with a confinement-enhanced (CE) $Al_{0.22}Ga_{0.78}As$ barrier had a single peak at $7.8{\mu}m$ at 77 K. However, sample B with an $Al_{0.20}Ga_{0.80}As$ barrier had three peaks at (${\sim}3.5{\mu}m$, ${\sim}5{\mu}m$, ${\sim}7{\mu}m$) due to various quantum confined transitions. The measured peak responsivities (see Fig) are ~0.45 A/W (sample A, at $7.8{\mu}m$, $V_b=-0.4V$ bias) and ~1.3 A/W (sample B, at $7{\mu}m$, $V_b=-1.5V$ bias). At 77 K, sample A and B had a detectivity of $1.2{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-0.4V$ bias) and $5.4{\times}10^{11}cm.Hz^{1/2}/W$ ($V_b=-1.5V$ bias), respectively. It is obvious that the higher $D^*$ of sample B (than sample A) is mainly due to the low dark current and high responsivity.