• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.199-200
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• 2008

In this paper, we researched optical characteristics of a holographic optical security system using a reflection recording material and optical random phase mask. The system have the property of optical security key with the phase mask. Also, a reflection recording geometry can reduced a size of the reconstruction system because a input beam to reconstruct a holographic image and a diffraction beam are the same side on the material.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.06a
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• pp.121-125
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• 2005

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.516-521
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• 2005

The application of UWB not only complies with the requirements of remote sensors system(ECG), it also contributes to the effectiveness of the implementations through its unique qualities such as ultra low transmission power - an important factor when dealing with biomedical equipment. In this paper, the aim is to replace the wired ECG sensors with a wireless link and design wireless UWB communication system. The various pulse shapes are presented that satisfies the FCC spectral mask and FCC part 15 rule. It is shown that UWB can be a high rate transmission over short ranges using Rake receiver, with the capability for reliably transmitting 100Mbps over distance at about 10 meters.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.347-347
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• 2009

결정질 태양전지의 공정에 있어서 호모지니어스(homogeneous)한 구조보다 향상된 변환효율을 얻기 위해 선택적 도핑 방법에 관한 연구가 활발하다. 선택적 도핑 방법이란 에미터(emitter) 층을 $n^{++}$ 영역과 $n^+$ 영역으로 나누어 향상된 전류밀도와 개방전압을 얻기 위한 방법이다. 본 연구에서 제시된 RIE 에치-백 구조는 다수의 선택적 도핑 방법 중 하나이다. 기존의 에치-백 구조는 전면 전극 형성 후 RIE 공정을 수행하기 때문에 전면 전극이 손상되고 RIE 데미지(damage)가 발생되는 문제점이 있었다. 그러나 본 연구에서 제시된 구조는 기존의 에치-백 구조와 달리 RIE 에칭 후 발생된 데미지를 제거하는 추가적인 공정인 질산 패시베이션(nitric acid passivation)이 수행되었다. 또한 본 연구에서 새롭게 제시된 블라킹 마스크 페이스트(blocking mask paste)는 기존의 에치-백 구조에서 발생된 전극 손상 문제를 해결해 주고 있다. 이러한 결과로 호모지니어스 구조보다 향상된 전류밀도 (35.77 mA/$cm^2$), 개방전압 (625 mV), FF (78.01%), 변환효율 (17.43%)를 얻었다.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.11
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• pp.108-115
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• 2007

We have designed a high transmission C-shaped aperture using finite differential time domain (FDTD) technique. The C-shaped aperture was fabricated in the aluminum thin film on a glass substrate using a focused ion beam (FIB) milling. Nano-size patterning was demonstrated with a vacuum contact device to keep tight contact between the Al mask and the photoresist. Using 405 nm laser, we recorded a 50 nm-size dot pattern on the photoresist with the aperture and analyzed the spot size dependent on the dose illuminated on the aperture.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.190-192
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• 2006

The 3-dimensional(3D) chip stacking technology is one of the leading technologies to realize a high density and high performance system in package(SIP). It could be found that it is the advanced process of through-hole via formation with the minimum damaged on the Si-wafer. Laser ablation is very effective method to penetrate through hole on the Si-wafer because it has the advantage that formed under $100{\mu}m$ diameter through-hole via without using a mask. In this paper, we studied the optimum method for a formation of through-hole via using femto-second laser heat sources. Furthermore, the processing parameters of the specimens were several conditions such as power of output, pulse repetition rate as well as irradiation method and time. And also the through-hole via form could be investigated and analyzed by microscope and analyzer.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.679-682
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• 2003

We report the suitable SLS (sequential lateral solidification) as a function of laser intensity. Precursor film is changed from 50nm to 100nm and is deposited on glass substrate by PECVD. We can find the suitable SLS length by changing the mask size. In this paper, we present the well-defined grain growth conditions as a function of laser intensity.

• Journal of Information Display
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• v.12 no.4
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• pp.191-194
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• 2011

A symmetric-viewing inverse-twisted-nematic (ITN) liquid crystal display (LCD) with alternating alignment layers was developed using a stamping-assisted rubbing (SAR) technique. A patterned layer of a fluorinated acrylate polymer was transferred onto the first rubbed vertical-alignment layer prepared on a substrate by stamping. The fluorinated acrylate polymer provided a protective layer covering the first rubbed alignment layer during the second rubbing process, which promoted the vertical alignment of the LC molecules. The LC cell in the ITN geometry with two orthogonally rubbed alignment layers showed symmetric-viewing characteristics with fourfold symmetry. The SAR technique was shown to be a mask-free alignment method of producing multidomains for symmetric-viewing LCDs.