• Journal of the Korean Solar Energy Society
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• v.34 no.4
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• pp.39-44
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• 2014

The elemental composition of electro-deposited black Cr solar selective coatings before and after heating in air by using secondary ion mass spectrometry (SIMS) was investigated for optical property analysis. In addition, black Cr selective coating exposed by solar radiation for 5 months was compared with heated sample. SIMS investigation shows that $OH^+$ bearing ions were related to a near surface region of CrOH and CrO compound. The optical degradation of this coating after heating at $500^{\circ}C$ reveals that diffusion of the Cu and Ni elements in substrate material, the chemical interactions adjacent to the interface, and the interface width broadening.

• Journal of Korean Society for Geospatial Information Science
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• v.1 no.2 s.2
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• pp.131-141
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• 1993

This paper describes the development of SIMS. SIMS provides not only the basic functions, such as input and output of outside plant maps and facility status statistics report, which are the major function of TOMS, but also can manage outside plant facilities and subscriber information integrately to maximize the efficiency of large outside plant facility database and to increase the qualify of subscriber service. SIMS provides following functions: Work order generation for telephone installation; Automatic cable pair assignment; Cable tracing and unused pair management; Subscriber record management and statistics report generation; Subscriber address information management.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.225-233
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• 2001

Distortion of Secondary Ion Mass Spectrometry(SIMS) depth profile, which is usually observed when the analysis is made using oxygen flooding on the surface of Si with oxide on it, has been corrected. The origin of distortion has been attributed to depth calibration error due to sputter rate difference and concentration calibration error due to relative sensitivity factor(RSF) difference between $SiO_2$ and Si layers, In order to correct depth calibration error, artifact in analysis of sodium ion on oxide was used to define the interface in SIMS depth profile and oxide thickness was measured with SEM and XPS. The differences of sputter rate and RSF between two layers have been attributed to volume swelling of Si substrate occurred by oxygen flooding induced oxidation. The corrected SIMS depth profiles showed almost the same results with those obtained without oxygen flooding.

• Mass Spectrometry Letters
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• v.12 no.2
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• pp.47-52
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• 2021

Evaluating the impurity concentrations in semiconductor thin films using time of flight secondary ion mass spectrometry (ToF-SIMS) is an effective technique. The mass interference between isotopes and matrix element in data interpretation makes the process complex. In this study, we have investigated the doping concentration of phosphorus in, phosphorus doped silicon thin film on glass using ToF-SIMS in the dynamic mode of operation. To overcome the mass interference between phosphorus and silicon isotopes, the quantitative analysis of counts to concentration conversion was done following two routes, standard relative sensitivity factor (RSF) and SIMetric software estimation. Phosphorus doped silicon thin film of 180 nm was grown on glass substrate using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using ToF-SIMS, the phosphorus-31 isotopes were detected in the range of 10¹~10⁴ counts. The silicon isotopes matrix element was measured from p-type silicon wafer from a separate measurement to avoid mass interference. For the both procedures, the phosphorus concentration versus depth profiles were plotted which agree with a percent difference of about 3% at 100 nm depth. The concentration of phosphorus in silicon was determined in the range of 10¹⁹~10²¹ atoms/cm³. The technique will be useful for estimating distributions of various dopants in the silicon thin film grown on glass using ToF-SIMS overcoming the mass interference between isotopes.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.91-94
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• 2008

Newly developed Atom Probe Tomography (APT) technique can provide the highest available spatial resolution, 3D tomography imaging and quantitative chemical analysis in a sub-nm scale. As a complementary technique to APT, Nano-secondary ion Mass Spectroscopy (SIMS) also provides the boron distribution in micro-scale. Therefore, the exact behavior of boron at either grain boundary or grain interior in steels can be investigated by the combination of APT and SIMS techniques from the sub-nanometer scale to the micrometer scale. The results obtained by both APT and SIMS revealed that the boron atoms were mainly segregated to the grain boundaries rather than to the grain interior in the steels containing 50ppm and 100ppm boron. It also found that carbon atoms were segregated at the boron enriched regions, which were thought to be retained austenite phase due to the chemical composition of carbon atoms.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.576-582
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• 2002

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35\mu m$ design rule. The processes could be simple by in-situ process in growing dielectric. The nitrogen distribution and bonding states of gate dielectrics were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). As the nitridation temperature increased, nitrogen concentration increased linearly, and more time was required to form the same reoxidized layer thickness. ToF-SIMS results showed that SiON species were detected at the initial oxide interface which had formed after NO annealing and $Si_2NO$ species within the reoxidized layer formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. It could be said that nitrogen concentration near initial interface is limited to a certain quantity, so the excess nitrogen is redistributed within reoxidized layer and contribute to electron trap generation.

• Journal of Conservation Science
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• v.34 no.2
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• pp.129-135
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• 2018

Scientific investigation of cultural heritage can provide important information to understand the context of the object. To know the characteristics of the material is also an essential part of objects management and conservation. However, the identification and characterization of organic dyes used in archaeological and historical textiles are often limited by the restrictions in sampling. To cope with the difficulties, applications of high-performance techniques of surface analysis, such as Time of Flight-Secondary Ion Mass Spectra (TOF-SIMS) could be considered as a non or micro-destructive option. This study aims to examine the applicability of TOF-SIMS analysis to the detection of organic dyes from historical textiles. A group of silk fabrics dyed with vegetable dyes were artificially photo-aged to different degrees and analyzed with TOF-SIMS. Molecular and fragment ions from indigo were successfully detected from the aged samples; however, only some fragment ions were observed from gardenia and safflower dyed fabrics. Further studies with actual historical samples with extended examination scope would be necessary to assess the validity of this technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by 0.35$\mu\textrm{m}$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary ton Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and Si$_2$NO species near the new Si-SiO$_2$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the Si-SiO$_2$ interface and contributed to electron trap generation.

• Proceedings of the Korean Information Science Society Conference
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• 2003.10a
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• pp.571-573
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• 2003

초.중등학교에서는 교육행정업무의 효율성을 위하여 학교정보관리시스템을 활용하고 있다. 본 논문에서는 새로 도입한 교육행정정보시스템(NEIS)과 기존의 종합정보관리시스템(SIMS, CS)의 변화된 기능을 파악해보고, NEIS의 효율성과 현장 적합성을 가능해보고자 하였다. 그 결과, 학적관리, 성적관리, 각종 교육통계 및 보고업무, 대민 서비스 등의 개선된 기능이 있는 반면, 보건관리, 교수학습 지원, 그룹웨어 기능의 지원이 미흡하였다.

• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.508-509
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• 2006

인터넷 이용자의 편의를 위하여 기업포탈(Enterprise Portal)을 구축하는 사례가 급증하고 있으며, ERP 도입을 통하여 기존의 많은 시스템의 통합을 추진하고 있는 추세로서 송변전지리정보시스템(TGIS)과 변전소 정보관리시스템(SIMS)의 통합 운영은 시스템적인 측면과 업무적인 측면을 모두 고려하여 볼 때 그 효용성은 매우 크다고 할 수 있으며, 송변전이 통합된 자산관리 운영에 다양한 편의성을 제공할 것이다.