• Journal of the Korean Ceramic Society
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• v.29 no.3
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• pp.232-240
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• 1992

Densification behavior, microstructural evolution, and mechanical properties of hot-pressed specimens using $\beta$-SiC and $\alpha$-SiC powder with Al2O3 additive were studied. Beta-SiC powder was fully densified as 205$0^{\circ}C$, but $\alpha$-SiC powder was at 210$0^{\circ}C$. The maximum flexural strength and the fracture toughness of the specimen hot-pressed using $\beta$-SiC powder were 681 MPa and 6.7 MPa{{{{ SQRT {m } }}, and thosevalues of specimen hot-pressed using $\alpha$-SiC powder were 452 MPa and 4.7 MPa{{{{ SQRT {m } }}, respectively. The strength superiority of specimen hot-pressed using $\beta$-SiC powder was due to the finer grain size, and higher density. The higher toughness of specimen hot-pressed using $\beta$-SiC powder than $\alpha$-SiC powder than $\alpha$-SiC powder was due to the crack deflection mechanism arised from the difference of thermal expansion coefficient between $\alpha$ and $\beta$-SiC phases which were co-existed in the sintered body.

• Korean Journal of Materials Research
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• v.6 no.5
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• pp.515-523
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• 1996

세라믹 전구체로서 PCS와 PMS 두 종류의 실린콘 고분자를 합성하여 7, 15, 33 wt.%의 Mo분말, Mo(CO)6 금속화합물과 혼합한 뒤 130$0^{\circ}C$이상 가열하면 탄화물과 규화물의 다양한 세라믹복합재로 전이되었다. 특히 PMS용액에 7, 15 wt.% Mo분말을 분산하여 초음파 처리하면 열분해 수율이 60%까지 개선되고 전도성 소재인 SiC/MoSi2 복합조성의 세라믹스가 합성되었다. 그러나 풍부한 유기 반응기를 가진 PCS와 카보닐기가 탄소공급원으로 작용하는 Mo(CO)6를 반응물로 사용하였을 때는 SiC와 Mo2C와 같은 탄화물과 미향의 MoSi2 그리고 미확인상을 포함한 세라믹 복합상들이 얻어졌다.

• Journal of the Korean Ceramic Society
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• v.24 no.2
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• pp.139-146
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• 1987

${\beta}$-SiC powders were prepared by the simultaneous reduction and carbiding of Jecheon quartzite at 1400$^{\circ}C$ for 7 hours in hydrogen atmosphere, using graphite or carbon black as the reducing and carbiding reagent. The prepared SiC powder was acid-treated with the mixture of fluoric acid and hydrochloric acid at room temperature and also by heating on an alcohol lamp for one hour, respectively. The impurities were mostly eliminated and the purity of SiC became 98.5% after hot acid treatment. The specific surface area of SiC powder was also increased up to 115㎡/g by hot acid treatment. This pure and fine SiC powder was hot-pressed at 1900$^{\circ}C$ for 30min, using 5wt% Al2O3 as a sintering aid. The density, M.O.R., KIC and hardness of the hot-pressed SiC ceramics were 3.195g/㎤, 48.7Kgf/$\textrm{mm}^2$, 5.4MN/㎥/2 and 2,182Kgf/$\textrm{mm}^2$, respectively.

• Journal of Welding and Joining
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• v.15 no.4
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• pp.136-142
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• 1997

In this study, the amorphous foil filler, thickness of 20 - $20~30\mu\textrm{m}$ was made to develop Cu-7.5wt%Mn-7.5wt%Si insert alloy(melting point temperature : solidus line 1003K, liquidus line 1070K). Liquid phase diffusion bonding of 304 stainless steels (STS304), is carried out successfully by using developed Cu-7.5Mn-7.5Si insert alloy. Bonding conditions are taken from bonding pressure of 5MPa, bonding temperatures from 1073K to 1423K varied within 50K and brazing holding times of 0, 30, 60 and 240 minutes. As the results, the tensile strength in the liquid phase diffusion bonding is a little bit lower than that in the solid phase diffusion bonding. The authors find out that the liquid phase diffusion bonding needs lower bonding pressure than the others. Therefore, the liquid phase diffusion bonding had an excellent brazability in which the bonding process showed the typical mechanism of diffusion bonding. In corresponding, the new developed insert alloy of low melting pointed Cu-7.5Mn-7.5Si makes possible brazing between the STS304.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.160-161
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• 1997

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.195-200
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• 1998

We have investigated the crystal structure and electrical properties of Pt/SBT/$CeO_2$/Si(MFIS) and Pt/SBT/Si(MFS) structures for the gate oxide of ferroelectric memory. XRD spectra and SEM showed that the SBT film of SBT/$CeO_2$/Si structure had larger grain than that of SBT/Si structure. Furthermore HRTEM showed that SBT/$CeO_2$/Si had 5 nm thick $SiO_2$layer and very smooth interface but SBT/Si had 6nm thick $SiO_2$layer and 7nm thick amorphous intermediate interface. Therefore, $CeO_2$film between SBT film and Si substrate is confirmed as a good candidate for a diffusion barrier. The remanent polarization decreased and coercive voltage increased in Pt/SBT/$CeO_2/Pt/SiO_2$/Si structure. This effect may increase memory window of MFIS structure directly related to the coercive voltage. From the capacitance-voltage characteristics, the memory of Pt/SBT(140 nm)/$CeO_2$(25 nm)/Si structure were in the range of 1~2 V at the applied voltage of 4~6 V. The memory window increased with the thickness of SBT film. These results may be due to voltage applied at SBT films. The leakage currents of Pt/SBT/$CeO_2$/Si and Pt/SBT/Si were $ 10^8A/\textrm{cm}^2$ and $ 10^6 A/\textrm{cm}^2$, respectively.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.427-432
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• 2006

The preparation of SiC powder by SHS in the system of $SiO_2-Mg-C$ was investigated in this study. The effects of various processing parameters such as the initial pressure of inert gas in reactor, the content of Mg and C in mixture and the size of $SiO_2$ particles on the synthesis of SiC by SHS methode were investigated. The minimum initial pressure of inert gas in reactor for SHS reaction in this system was 5 atm, and as the pressure increased, and the concentration of unreacted Mg decreased. At 50 atm of the initial inert gas pressure in reactor, the optimum composition for the preparation of pure SiC was $SiO_2+2.5Mg+1.2C$. SiC powder synthesized in this condition had a mixture of ${\alpha}-SiC\;and\;{\beta}-SiC$ with an irregular shape and the particle size of $0.5{\sim}0.8{\mu}m$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.307-310
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.61-65
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• 2000

${\beta}$-SiC powder and ${\alpha}$-SiC powders of different particle sizes, containing 5.7wt% $Al_2O_3$ and 4.3wt% $Y_2O_3$ as sintering aids, were hot-pressed at $1780^{\circ}C$ and subsequently annealed at $1950^{\circ}C$ to initiate grain growth. All the hot-pressed and annealed materials consisted of large SiC grains and elongated SiC grains. Typical hardness and fracture toughness of materials for spectacle lens cutting were 15.6 GPa and $5.7MPa{\cdot}m^{1/2}$, respectively.