• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.80-80
• /
• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Korean Journal of Materials Research
• /
• v.8 no.10
• /
• pp.969-974
• /
• 1998

The effect of vanadium, which is known to decrease the stacking fault energy of Fe-base alloys, on the microstructure and elevated temperature sliding wear resistance of Fe-20Cr- 1.7C- 1Si alloy was investigated. The maximum amount of vanadium maintaining the austenitic matrix seems to be about 3wt.% in Fe-20Cr- 1.7C-1Si-xV (x = 0, 1, 3, 6. lOwt.%) alloys and the austenitic alloys showed better wear resistance than ferritic alloys. It was considered to be due to the low stacking fault energy and $\gamma->\alpha$ strain-induced phase transformation at rmm temperature. It was shown from elevated temperature sliding tests up to .$225^{\circ}C$ that the addition of vanadium increases the temperature, at which the transition from oxidative wear to adhesive wear occur, and the amount of d formed at $225^{\circ}C$. Thus, it was considered that the addition of vanadium improves the elevated temperature sliding wear resistance of Fe-20Cr- 1.7C - 1Si by reducing the increasing rate of stacking fault energy with temperature and by increasing Ma temperature.

• Plant Biotechnology Reports
• /
• v.4 no.3
• /
• pp.185-192
• /
• 2010

The Arabidopsis ${\omega}$-3 fatty acid desaturase (AtFAD7) catalyzes the synthesis of trienoic fatty acids (TA). A transgenic tobacco line, T15, was produced by a sense AtFAD7 construct and showed a cosuppression-like phenotype, namely extremely low TA levels. The sequence similarity between AtFAD7 and a tobacco ortholog gene, NtFAD7, was moderate (about 69%) in the coding sequences. AtFAD7 siRNAs accumulated at a high level, and both AtFAD7 and NtFAD7 mRNAs are degraded in T15 plants. The low-TA phenotype in T15 was dependent on a tobacco RNA-dependent RNA polymerase6 (NtRDR6). We also produced tobacco RNAi plants targeting AtFAD7 gene sequences. The AtFAD7 siRNA level was trace, which was associated with a slight reduction in leaf TA level. Unexpectedly, this RNAi plant showed an increased NtFAD7 transcript level. To investigate the effect of translational inhibition on stability of the NtFAD7 mRNAs, leaves of the wild-type tobacco plants were treated with a translational inhibitor, cycloheximide. The level of NtFAD7 mRNAs significantly increased after cycloheximde treatment. These results suggest that the translational inhibition by low levels of AtFAD7 siRNAs or by cycloheximide increased stability of NtFAD7 mRNA. The degree of silencing by an RNAi construct targeting the AtFAD7 gene was increased by co-existence of the AtFAD7 transgene, where NtRDR6-dependent amplification of siRNAs occurred. These results indicate that NtRDR6 can emphasize silencing effects in both cosuppression and RNAi.

• Transactions on Electrical and Electronic Materials
• /
• v.7 no.1
• /
• pp.21-25
• /
• 2006

In this study, liquid crystal (LC) aligning properties for homeotropic alignment on the $SiO_x$ thin film by electron beam evaporation method with electron beam system in accordance with the evaporation angles were investigated. Also, the control of pretilt angles homeotropic aligned LC on $SiO_x$ thin film as the function of the evaporation angles were studied. The uniform vertical LC alignment on the $SiO_x$ thin film surfaces with electron beam evaporation was achieved with all of the thin film angle conditions. It is considerated that the LC alignment on the $SiO_x$ thin film by electron beam evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $SiO_x$ thin film surface created by evaporation. The values of the pretilt angles according to the evaporation angle were from about $0.7^{\circ}$ to about $3.4^{\circ}$. The highest pretilt angles of about $3.4^{\circ}$ in aligned NLC on the $SiO_x$ thin film surfaces by electron beam evaporation were measured under the condition of $45^{\circ}$. Also, good LC alignment states on the treated $SiO_x$ thin film layer by electron beam evaporation were observed at annealing temperature of $250^{\circ}C$. Consequently, the high pretilt angle and the good thermal stability of LC alignment on the $SiO_x$ thin film by electron beam evaporation can be achieved.

• Nuclear Engineering and Technology
• /
• v.53 no.12
• /
• pp.3952-3965
• /
• 2021

In this study, volcanic ash was used as raw material to prepare waste forms with different silicon/aluminum (Si/Al) molar ratios to immobilize sodium-salt waste (SSW) containing simulated ¹³⁷Cs. Effects of Si/Al molar ratios (3:1 and 2:1) and sodium salts on sintering behavior of waste forms and immobilization mechanism of Cs⁺ were investigated. Results indicated that the main mineral phase of sintered waste-form matrixes was albite, and the formation of major phases was found to depend on Si/Al molar ratios. Si/Al molar ratio of 2 was favorable for the formation of pollucite, and the formation and crystallization of mineral phases were also decided based on physicochemical characteristics of sodium salts. Furthermore, product consistency test results indicated that the immobilization of Cs⁺ was related to Si/Al molar ratio, types of sodium salts, and glassy phase. Waste forms with Si/Al molar ratio of 2 exhibited better ability to immobilize Cs⁺, whereas the influence of sodium salts and glassy phases on the immobilization of SSW showed more complicated relationship. In waste forms with Si/Al molar ratio of 2, Cs⁺ leaching concentrations of samples containing Na₂B₄O₇·10H₂O and NaOH were low. Na₂B₄O₇·10H₂O easily transformed into liquid phase during sintering to consequently achieve low temperature liquid-phase sintering, which is beneficial to avoid the volatilization of Cs⁺ at high temperature. Results clearly reveal that waste forms with Si/Al molar ratio of 2 and containing Na₂B₄O₇·10H₂O show excellent immobilization of Cs⁺.

• 연구논문집
• /
• s.30
• /
• pp.111-119
• /
• 2000

Sintering of alumina powder was studied in the presence of Y-Si oxide and oxynitride additives. The main crystalline phase of the sintering aids pre-reacted at $1400^{\circ}C$ was $\alpha$ - $Y_2$$SiO_2$>$O_7$. Y-N apatite was co-existed in the Si-40N sintering aid because of its high content of N. During the sintering process, liquid phases were formed by the reaction between additives and alumina, and these liquid phases promote the densification of alumina. SEM micrographs showed that uniform grain growth occurred in the system with oxide additive(Si-0N). In the case of oxynitride additive system(Si-20N and Si-40N), bimodal microstructure was observed due to the exaggerated grain growth, As the nitrogen content in the additive system increased the exaggerated grain growth occurred extensively. Bloating, which seemed to be originated by the liberation of $N_2$ gas, occurred un the Si-40N oxynitride additive system.

• The Korean Journal of Ceramics
• /
• v.3 no.3
• /
• pp.163-168
• /
• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• Journal of the Korean Ceramic Society
• /
• v.31 no.9
• /
• pp.1021-1029
• /
• 1994

SiC ultrafine particles of 1, 10, 20 and 30 vol% were dispersed in $\alpha$-Si3N4 matrix and hot-pressed under the condition of 30 MPa at 1800 and 190$0^{\circ}C$ respectively. Physical, mechanical properties and microstructures of sintered Si3N4-SiC nanocomposites were investigated. Flexural strength and density of Si3N4-10 vol% SiC nanocomposites hot-pressed at 190$0^{\circ}C$ represented the 1002 MPa and 97.9%T.D respectively, and it was confirmed as a remarkable improvement of 67% compared to Si3N4 monolith. Fracture toughness was shown as 7.2 MPa.m1/2 when the same composition was hot pressed at 180$0^{\circ}C$. This effect was supposed to be due to the improvement of microstructure by the adequate suppression of the excessive growth of Si3N4 grain with SiC nano-particles.

• Journal of the Korean Ceramic Society
• /
• v.37 no.8
• /
• pp.805-810
• /
• 2000

The formation, microstructure and properties of MoSi2/SiC ceramic composites by polymer pyrolysis were investigated for the application of heating element material. Polymethylsiloxanes were mixed with Si, SiC, MoSi2 as filler and ceramic composites prepared by pyrolysis in N2 atmosphere at 1320~145$0^{\circ}C$ were studied. Dimensional change, density variation and phases were analyzed and correlated to the resulting material properties. Microstructures of ceramic composite prepared by polymer pyrolysis were composed of MoSi2, SiC and silicon oxycarbide glass matrix. Depending on the pyrolysis conditions, ceramic composites with a density of 86~90 TD%, a fracture strength of 213~284 MPa, a thermal expansion coefficient of 4~7$\times$10-6 were obtained. The electrical resistivity of the specimen decreased with increasing of temperature up to 50$0^{\circ}C$.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.7
• /
• pp.2162-2166
• /
• 2013

The tailored surface modification of electrode materials is crucial to realize the wanted electronic and electrochemical properties. In this regard, a dexterous carbon encapsulation technique can be one of the most essential preparation methods for the electrode materials for lithium rechargeable batteries. For this purpose, DL-malic acid ($C_4H_6O_5$) was here used as the carbon source enabling an amorphous carbon layer to be formed on the surface of Si nanoparticles at enough low temperature to maintain their own physical or chemical properties. Various structural characterizations proved that the bulk structure of Si doesn't undergo any discernible change except for the evolution of C-C bond attributed to the formed carbon layer on the surface of Si. The improved electrochemical performance of the carbon-encapsulated Si compared to Si can be attributed to the enhanced electrical conductivity by the surface carbon layer as well as its role as a buffering agent to absorb the volume expansion of Si during lithiation and delithiation.