• 비파괴검사학회지
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• 제21권6호
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• pp.612-617
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• 2001

본 연구에서는 Al-Si 합금 열간단조품 내부 판상 결함을 탐지하기 위한 초음파평가 기법을 확립하였다. 이를 위하여 내부에 존재하는 여러 가지 판상 결함의 초음파 특성을 실험적으로 구하였으며, 펄스-반사법을 적용하여 초음파 탐상신호에 대한 내부 판상 결함의 각도 등이 초음파 수신신호의 형태에 미치는 영향을 평가하였다. 한편 결함위치에 따른 초음파 신호특성을 규명하기 위하여 단조품 가장자리 부위에 존재하는 내부 판상 결함의 초음파 수신신호 특성을 평가하였으며, 본 시험편에 대한 초음파 투과법 적용 한계에 대하여 고찰하였다. 나아가 500개 이상의 파단 실험을 통해 제시된 초음파 평가기법의 신뢰성을 확인하였다.

• Journal of Magnetics
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• 제2권1호
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• pp.12-15
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• 1997

Fe-(3∼6.5wt%) Si alloy powders having a high magnetic induction(Bs) and a low core loss value for high frequency use were obtained by an extractive melt spinning as well as a centrifugal atomization technique. Sintered core rings made by the rapidly solidified Fe-6.5wt% Si powders exhibited the high frequency magnetic properties : megnetic induction(B8) of 1.23 T, coercivity(Hc) of 0.12 Oe, relative permeability(${\mu}$a) of 6321, and core loss(W10/50) of 1.27 W/kg from the rings of 1.1 mm thick. The magnetic induction values were found to be almost identical to those of non-oriented Fe-6.5wt% Si steel sheet and double the value of 6.5wt% Si sheet prepared by the CVD technique. The high frequency core losses(W) up to 10 kHz(W10/10k) were measured to be competitive to those of grain-oriented Fe-6.5wt% Si steel sheet.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.173-176
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• 1998

Epitaxial Si layers were deposited on n- or p-type Si(100) substrates by hot-wall chemical vapor deposition (CVD) technique using the {{{{ {SiH }_{ 2} {Cl }_{2 } - {H }_{ 2} }}}}chemistry. Thermodynamic calculations if the Si-H-Cl system were carried out to predict the window of actual Si deposition procedd and to investigate the effects of process variables(i.e., the deposition temperature, the reactor pressure, and the source gas molar ratios) on the growth of epitaxial layers. The calculated optimum process conditions were applied to the actual growth runs, and the results were in good agreement with the calculation. The expermentally determined optimum process conditions were found to be the deposition temperature between 900 and 9$25^{\circ}C$, the reactor pressure between 2 and 5 Torr, and source gad molar ration({{{{ {H }_{2 }/ {SiH }_{ 2} {Cl }_{2 } }}}}) between 30 and 70, achieving high-quality epitaxial layers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1131-1134
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• 2003

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.

• 한국세라믹학회지
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• 제32권1호
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• pp.63-70
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• 1995

A crack-free ceramic composite membrane with micropores has been synthesized by the pressurized sol-gel coating technique using the mixed Al2O3-SiO2 sols. The mixed sols were prepared by mixing nanoparticulate SiO2 and boehmite sols. These sols were more stable at lower pH, but very unstable when their copositions were in the range of 50~75mol% of SiO2 at the same pH. The mixed Al2O3-SiO2 membrane prepared from the mixed sol (0.2mol/$\ell$ of solid content and pH=2) containing 40mol% of SiO2 had the mean pore radius of 0.80nm and the specific surface area of 280$m^2$/g. The nitrogen permeability through the coated Al2O3-SiO2 layer was 42$\times$107mol/$m^2$.s.Pa. It was found that the thermal stability of aluminosilicate membranes, even through similar to that of SiO2 membranes, was much improved in comparison with ${\gamma}$-alumina membranes.

• 한국정보통신학회논문지
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• 제4권4호
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• pp.809-815
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• 2000

The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.

• 한국정보통신학회논문지
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• 제5권6호
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• pp.1128-1135
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• 2001

본 논문에서는 HSG형성을 위한 Si$_2$H$_{6}$의 조사와 어닐링을 통한 seeding method를 64Mbit DRAM에 적용하였다. 이 기술을 사용함으로서 인이 도우핑된 Amorphous 실리콘의 전극에 HSG grain 크기를 조절할 수 있었고, 이 새로운 HSG형성조건은 기존의 stack 캐패시터보다 약 2배의 정전용량을 확보할 수 있었다. 이와같은 방법을 이용한 HSG형성에서 인농도, 저장폴리 증착온도 및 HSG의 두께에 대한 공정 최적 조건으로는 각각 3.0-4.OE19atoms/㎤ , 53$0^{\circ}C$ 및 400$\AA$이었다. 이들 최적화된 공정조건으로 64M bit DRAM 캐패시터에 적용시 질화막의 두께 한계는 65$\AA$으로 확인되었다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2007년도 제28회 춘계학술대회논문집
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• pp.185-188
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• 2007

액체 및 고체추진기관의 내열부품으로 사용하기 위하여 Liquid Silicon Infiltration(액체 실리콘 함침) 공정이 적용된 C/SiC 복합재료를 개발하였다. 탄소섬유 및 탄소직물을 사용하여 필리멘트 와인딩, 테이프 롤링 및 인벌루트 적층 공법이 사용된 다양한 탄소 프리폼이 제작되었다. 내열 부품으로써의 열구조 성능을 극대화시키기 위하여 SiC 함유량, 열처리 조건, 수지 및 기상 함침 조건을 변화시키면서 시편을 제작하고 평가하였다. C/SiC 복합재료를 액체 및 고체추진기관의 내열부품으로 사용하기 위하여 연소시험을 수행하였으며 내열 성능 해석을 위한 수학적 삭마 모델이 개발되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.532-534
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• 2000

Si thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si thin film has been annealed again at nitrogen ambient. Strong violet-indigo photoluminescence have been observed from Si thin film annealed in nitrogen ambient gas. As increasing environmental gas pressure, weak green and red emissions from annealed Si thin films also observed by photoluminescence.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.