• 제목/요약/키워드: SI technique

검색결과 1,429건 처리시간 0.031초

무가압침투법에 의한 $SiC_p/Al$ 복합재료의 제조 및 기계적 특성 (Fabrication and Mechanical Properties of $SiC_p/Al$ Composites by Pressureless Infiltration Technique)

  • 진훈구;오명석;김영식
    • 동력기계공학회지
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    • 제5권4호
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    • pp.74-81
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    • 2001
  • The infiltration behavior of molten Al-alloy, microstructures, hardness, and the interfacial reactions of $SiC_p/Al$ composites fabricated by the pressureless infiltration technique were investigated. It was made clear that both the weight fraction of SiC reinforcement and additive Mg content considerably influenced on the infiltration behavior of the molten Al-alloy matrix. Complete infiltration of molten Al-alloy achieved under the conditions that weight fraction of SiC content is more than 30wt%, and additive Mg content is more than 9wt%. Interfacial region of Al-alloy matrix and SiC reinforcement phase, $Mg_2Si$ was formed by the reaction between Mg and SiC. Another reaction product AlN was also formed by the reaction between Al-alloy matrix and gas atmosphere nitrogen.

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저온 변조 성장 기법을 이용하여 Sb가 ${\delta}$ 도핑된 다층 구조의 Si 분자선 박막 성장과 특성 분석 (Molecular beam epitaxial growth and characterization of Sb .delta.-doped Si layers using substrate temperature modulation technique)

  • Le, Chan ho
    • 전자공학회논문지A
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    • 제32A권12호
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    • pp.142-148
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    • 1995
  • Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

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Growth Mechanism of Graphene structure on 3C-SiC(111) Surface: A Molecular Dynamics Simulation

  • 황유빈;이응관;최희채;정용재
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.433-433
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    • 2011
  • Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

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부상응고법에 의한 실리콘 응고에 관한 연구 (A study on solidification of silicon by floating technique)

  • 이근희;이진형
    • 한국결정성장학회지
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    • 제10권1호
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    • pp.30-35
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    • 2000
  • 부상응고법은 액상 받침 재료 위에 용융 재료를 띄워서 응고시키는 방법으로 판유리 제조가 대표적이며, 이러한 방법을 이용하여 Si 판재를 얻기 위한 실험을 하였다. 본 연구에서는 액상받침재료에 요구되는 물리 화학적인 성질을 고려하여 3원계 산화물 상태도를 조사한 후, 적절한 액상받침재료로 50 wt% $SiO_2$- 2l wt% $A1_2$$O_3$-29 wt% MnO를 이용하였다. 실험결과 본 연구에서 이용한 받침재료는 온도와 밀도, Si의 반응성 면에서 적절한 성질을 나타내었으나, 유동도 및 계면 장력면에서 문제점을 나타내었다.

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Development of a Low Temperature Doping Technique for Applications in Poly-Si TFT on Plastic Substrates

  • Hong, Wan-Shick;Kim, Jong-Man
    • Journal of Information Display
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    • 제4권3호
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    • pp.17-21
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    • 2003
  • A low temperature doping technique to be applied in poly-Si TFTs on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 $^{\circ}C$, and a sheet resistance of as low as 300 ${\Omega}$/sq. was obtained.

Si 함량에 따른 Ti-Al-Si-C-N 코팅막의 미세구조와 기계적 특성의 변화에 관한 연구 (Effect of Si on the Microstructure and Mechanical Properties of Ti-Al-Si-C-N Coatings)

  • 홍영수;권세훈;김광호
    • 한국표면공학회지
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    • 제42권2호
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    • pp.73-78
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    • 2009
  • Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

${Y_2}{SiO_5}:Ce$ 청색 형광체의 졸-겔 합성 및 발광특성 (Sol- Gel Synthesis and Luminescent Properties of ${Y_2}{SiO_5}:Ce$ Blue Phosphors)

  • 이준;한정화;박희동;윤석승
    • 한국재료학회지
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    • 제11권9호
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    • pp.740-744
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    • 2001
  • The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

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A SENSITIVITY ANALYSIS OF THE KEY PARAMETERS FOR THE PREDICTION OF THE PRESTRESS FORCE ON BONDED TENDONS

  • Jang, Jung-Bum;Lee, Hong-Pyo;Hwang, Kyeong-Min;Song, Young-Chul
    • Nuclear Engineering and Technology
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    • 제42권3호
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    • pp.319-328
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    • 2010
  • Bonded tendons have been used in reactor buildings at some operating nuclear power plants in Korea. Assessing prestress force on these bonded tendons has become an important pending problem in efforts to assure continued operation beyond their design life. The System Identification (SI) technique was thus developed to improve upon the existing indirect assessment technique for bonded tendons. As a first step, this study analyzed the sensitivity of the key parameters to prestress force, and then determined the optimal parameters for the SI technique. A total of six scaled post-tensioned concrete beams with bonded tendons were manufactured. In order to investigate the correlation of the natural frequency and the displacement to prestress force, an impact test, a Single Input Multiple Output (SIMO) sine sweep test, and a bending test using an optical fiber sensor and compact displacement transducer were carried out. These tests found that both the natural frequency and the displacement show a good correlation with prestress force and that both parameters are available for the SI technique to predict prestress force. However, displacements by the optical fiber sensor and compact displacement transducer were shown to be more sensitive than the natural frequency to prestress force. Such displacements are more useful than the natural frequency as an input parameter for the SI technique.

추진기관용 C/SiC 복합재료의 특성 평가 (The Performance Evaluation of C/SiC Composite for Rocket Propulsion Systems)

  • 김연철
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2009년도 제33회 추계학술대회논문집
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    • pp.433-438
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    • 2009
  • 고체 및 액체 추진기괸에 적용하기 위하여 액체 실리콘 함침법(LSI)을 이용한 C/SiC 복합재료를 개발하였다. 연소시험을 통하여 C/SiC 복합재료의 우수한 성능을 확인하였으며 산화에 의한 삭마 모델을 제시 하였다.

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하이브리드 코팅시스템에 의해 제조된 Mo-Si-N 박막의 미세구조 및 기계적 특성연구 (Microstructure and Mechanical Properties of Mo-Si-N Coatings Deposited by a Hybrid Coating System)

  • 허수정;윤지환;강명창;김광호
    • 한국표면공학회지
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    • 제39권3호
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    • pp.110-114
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    • 2006
  • In this work, comparative studies on microstructure and mechanical properties between $Mo_2N$ and Mo-Si-N coatings were conducted. Ternary Mo-Si-N coatings were deposited on AISI D2 steel substrates by a hybrid method, where AIP technique was combined with a magnetron sputtering technique. Instrumental analyses of XRD, HRTEM, and XPS revealed that the Mo-Si-N coatings must be a composite consisting of fine $Mo_2N$ crystallites and amorphous $Si_3N_4$. The hardness value of Mo-Si-N coatings significantly increased from 22 GPa of $Mo_2N$ coatings to about 37 GPa with Si content of 10 at.% due to the refinement of $Mo_2N$ crystallites and the composite microstructure characteristics. The average friction coefficient of the Mo-Si-N coatings gradually decreased from 0.65 to 0.4 with increasing Si content up to 15 at.%. The effects of Si content on microstructure and mechanical properties of Mo-N coatings were systematically investigated.