• Journal of Power System Engineering
• /
• v.5 no.4
• /
• pp.74-81
• /
• 2001

The infiltration behavior of molten Al-alloy, microstructures, hardness, and the interfacial reactions of $SiC_p/Al$ composites fabricated by the pressureless infiltration technique were investigated. It was made clear that both the weight fraction of SiC reinforcement and additive Mg content considerably influenced on the infiltration behavior of the molten Al-alloy matrix. Complete infiltration of molten Al-alloy achieved under the conditions that weight fraction of SiC content is more than 30wt%, and additive Mg content is more than 9wt%. Interfacial region of Al-alloy matrix and SiC reinforcement phase, $Mg_2Si$ was formed by the reaction between Mg and SiC. Another reaction product AlN was also formed by the reaction between Al-alloy matrix and gas atmosphere nitrogen.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.12
• /
• pp.142-148
• /
• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.433-433
• /
• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.10 no.1
• /
• pp.30-35
• /
• 2000

A floating solidification technique is a process applied extensively to the production of glass plates. We used the technique for fabrication of Si plate. We used the proper liquid substrate material of 50 wt% $SiO_2$- 21 wt% $A1_2$$O_3$-29 wt% MnO, after studying ternary phase diagram of various oxides systems. The liquid substrate material has proper properties in the aspects of temperature, density and reactivity. But results showed some problems in fluidity and surface tension of the liquid substrate material.

• Journal of Information Display
• /
• v.4 no.3
• /
• pp.17-21
• /
• 2003

A low temperature doping technique to be applied in poly-Si TFTs on plastic substrates was investigated. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 $^{\circ}C$, and a sheet resistance of as low as 300 ${\Omega}$/sq. was obtained.

• Journal of the Korean institute of surface engineering
• /
• v.42 no.2
• /
• pp.73-78
• /
• 2009

Quinary Ti-Al-Si-C-N films were successfully synthesized on SUS 304 substrates and Si wafers by a hybrid coating system combining an arc ion plating technique and a DC reactive magnetron sputtering technique. In this work, the effect of Si content on the microstructure and mechanical properties of Ti-Al-C-N films were systematically investigated. It was revealed that the microstructure of Ti-Al-Si-C-N coatings changed from a columnar to a nano-composite by the Si addition. Due to the nanocomposite microstructure of Ti-Al-Si-C-N coatings, the microhardness of The Ti-Al-Si-C-N coatings significantly increased up to 56 GPa. In addition the average friction coefficients of Ti-Al-Si-C-N coatings were remarkably decreased with Si addition. Therefore, Ti-Al-Si-C-N coatings can be applicable as next-generation hard-coating materials due to their improved hybrid mechanical properties.

• Korean Journal of Materials Research
• /
• v.11 no.9
• /
• pp.740-744
• /
• 2001

The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

• Nuclear Engineering and Technology
• /
• v.42 no.3
• /
• pp.319-328
• /
• 2010

Bonded tendons have been used in reactor buildings at some operating nuclear power plants in Korea. Assessing prestress force on these bonded tendons has become an important pending problem in efforts to assure continued operation beyond their design life. The System Identification (SI) technique was thus developed to improve upon the existing indirect assessment technique for bonded tendons. As a first step, this study analyzed the sensitivity of the key parameters to prestress force, and then determined the optimal parameters for the SI technique. A total of six scaled post-tensioned concrete beams with bonded tendons were manufactured. In order to investigate the correlation of the natural frequency and the displacement to prestress force, an impact test, a Single Input Multiple Output (SIMO) sine sweep test, and a bending test using an optical fiber sensor and compact displacement transducer were carried out. These tests found that both the natural frequency and the displacement show a good correlation with prestress force and that both parameters are available for the SI technique to predict prestress force. However, displacements by the optical fiber sensor and compact displacement transducer were shown to be more sensitive than the natural frequency to prestress force. Such displacements are more useful than the natural frequency as an input parameter for the SI technique.

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2009.11a
• /
• pp.433-438
• /
• 2009

The main objective of this research effort is to develop the performance of C/SiC composites manufactured by LSI (Liquid Silicon Infiltration) method for solid and liquid rocket propulsion system and ensure the performance analysis technique. The high performance and reliability of C/SiC composite are proved for solid and liquid rocket propulsion system. And the performance analysis technique related to mathematical ablation model is originated.

• Journal of the Korean institute of surface engineering
• /
• v.39 no.3
• /
• pp.110-114
• /
• 2006

In this work, comparative studies on microstructure and mechanical properties between $Mo_2N$ and Mo-Si-N coatings were conducted. Ternary Mo-Si-N coatings were deposited on AISI D2 steel substrates by a hybrid method, where AIP technique was combined with a magnetron sputtering technique. Instrumental analyses of XRD, HRTEM, and XPS revealed that the Mo-Si-N coatings must be a composite consisting of fine $Mo_2N$ crystallites and amorphous $Si_3N_4$. The hardness value of Mo-Si-N coatings significantly increased from 22 GPa of $Mo_2N$ coatings to about 37 GPa with Si content of 10 at.% due to the refinement of $Mo_2N$ crystallites and the composite microstructure characteristics. The average friction coefficient of the Mo-Si-N coatings gradually decreased from 0.65 to 0.4 with increasing Si content up to 15 at.%. The effects of Si content on microstructure and mechanical properties of Mo-N coatings were systematically investigated.