• Journal of Power System Engineering
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• v.5 no.4
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• pp.74-81
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• 2001

The infiltration behavior of molten Al-alloy, microstructures, hardness, and the interfacial reactions of $SiC_p/Al$ composites fabricated by the pressureless infiltration technique were investigated. It was made clear that both the weight fraction of SiC reinforcement and additive Mg content considerably influenced on the infiltration behavior of the molten Al-alloy matrix. Complete infiltration of molten Al-alloy achieved under the conditions that weight fraction of SiC content is more than 30wt%, and additive Mg content is more than 9wt%. Interfacial region of Al-alloy matrix and SiC reinforcement phase, $Mg_2Si$ was formed by the reaction between Mg and SiC. Another reaction product AlN was also formed by the reaction between Al-alloy matrix and gas atmosphere nitrogen.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.965-970
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• 1990

A nitrogenation of coal ash in the presence of carbon was carried out to examine the effects of reaction temperature, reaction time and carbon composition on the formation of AlN, SiC and Si3N4. Decreasing the particle size increased the formation of AlN and its maximum composition in the product was obtaiend under 1450~150$0^{\circ}C$, 2 hours of reaction time and about 30% of carbon addition(on the basis of sample weight). Compositions of SiC and Si3N4 were distributed to the opposite so that SiC showed a higher composition compared with Si3N4 at a lower temperature, a shorter reaction time and a greater carbon addition.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.853-858
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• 1999

To investigate the effect of H2 flow rate and TMS[Si(CH3)4] concentration on synthesizing ultrafine ${\beta}$-SiC powder by vapor phase reaction the experiment was performed at 1100$^{\circ}C$ of the reaction temperature under the condition of 200-2000 cc/min of H2 gas flow rate and 1-10% of TMS concentration respectively. The shape of ${\beta}$-SiC particles synthesized was spherical and the size of particles decreased and the distribution of particles was more uniform with increasing H2 gas flow rate. In this case Si powders were coexisted with ${\beta}$-SiC Pure and ultrafine ${\beta}$-SiC powders without Si were obtained under the condition of above 2% of TMS concentration and below 1500 cc/min of H2 gas flow rate.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.11-16
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• 1995

High reaction heat evolved from the oxidation of Al was used to synthesize SiC, which might be difficult to be formed by SHS. Al2O3-SiC composite powder was easily manufactured using KNO3 as an ignition and reaction catalyst. Unreacted Si and C were observed after reaction dependent upon the composition of starting powders, reaction atmosphere and relative densities of compacted bodies. The unreacted carbon could be removed by calcining at $600^{\circ}C$ and the remaining Si could be removed by dissolving in NaOH solution. The final powder particles were smaller than 1${\mu}{\textrm}{m}$ in size.

• Journal of Powder Materials
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• v.5 no.1
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• pp.64-70
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• 1998

Milling media of steel and partially stabilized zirconia(PSZ) were used to produce $Mo_3$Si by mechanical alloying(MA) of Mo-25.0at%Si elemental powder mixture. The effect of milling medium materials on MA of the powder mixture have been investigated by XRD and DTA. The reaction rate and the end-product noticeably depended upon the milling medium material. The formation of $Mo_3$Si and $Mo_5Si_3$phases by PSZ ball-milling took place after 15 hr of MA and was characterized by a slow reaction rate as Mo, Si, $Mo_5Si_3$ and $Mo_3$Si coexisted for a long period of milling time. The formation of a new phase by steel ball-milling, however, did not take Place even after 96 hr of MA. DTA and annealing results showed that $Mo_5Si_3$ and $Mo_3$Si were formed after heating the ball-milled powder specimens to different temperatures. At low temperatures, Mo and Si were transformed into $Mo_5Si_3$. At high temperatures, the formation of $Mo_3$Si can be partially attributed to the reaction, 7Mo+Si+$Mo_5Si_3$-.4$Mo_3$Si . The formation of $Mo_3$Si and Mo5Si3 phases by mechanical alloying of the powder mixture and the relevant reaction rate appeared to depend upon the milling medium material as well as the thermodynamic properties of the end-products.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.1-4
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• 1998

SiC whisker reinforced Al2O3-SiC composite was fabricated by reaction synthesis method whish is cost ef-fective and allows good dispersion of whiskers. Fracture strength at room temperature showed the highest value with 150$0^{\circ}C$ reaction temperature because a lot of SiC whiskers was formed. Fracture strength at 135$0^{\circ}C$ did not show big differences with reaction temperature due to agglomeration of whiskers and formation of sil-icon oxynitride during hot MO(modulus of rupture) test probably promoting grain boundary sliding.

• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.4079-4083
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• 2012

The mechanism of the cycloaddition reaction between singlet state dichlorosilylene germylidene ($Cl_2Si=Ge:$) and acetone has been investigated with B3LYP/6-$31G^*$ and B3LYP/6-$31G^{**}$ method, from the potential energy profile, we predict that the reaction has one dominant reaction pathway. The presented rule of the reaction is that the two reactants firstly form a Si-heterocyclic four-membered ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge atom in the Si-heterocyclic four-membered ring germylene and the ${\pi}$ orbital of acetone forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the Si-heterocyclic four-membered ring germylene further combines with acetone to form an intermediate. Because the Ge atom in the intermediate hybridizes to an $sp^3$ hybrid orbital after the transition state, then, the intermediate isomerizes to spiro-heterocyclic ring compound involving Si and Ge (P4) via a transition state.

• Journal of the Korean Ceramic Society
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• v.27 no.8
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• pp.956-956
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• 1990

A nitrogenation of coal ash in the presence of carbon was carried out to examine the effects of reaction temperature, reaction time and carbon composition on the formation of AlN, SiC and Si3N4. Decreasing the particle size increased the formation of AlN and its maximum composition in the product was obtaiend under 1450∼1500℃, 2 hours of reaction time and about 30% of carbon addition(on the basis of sample weight). Compositions of SiC and Si3N4 were distributed to the opposite so that SiC showed a higher composition compared with Si3N4 at a lower temperature, a shorter reaction time and a greater carbon addition.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1047-1052
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• 2002

The impact value, the interfacial shear strength, the tensile strength and the fracture strain of Nb/MoSi$_2$laminate composites, which were associated with the interfacial reaction layer, have been investigated. Three types of Nb/MoSi$_2$ laminate composites alternating sintered MoSi$_2$ layers and Nb foils were fabricated as the parameter of hot press temperature. The thickness of interfacial reaction layer of Nb/MoSi$_2$ laminate composites increased with increasing the fabrication temperature. The growth of interfacial reaction layer increased the interfacial shear strength and led to the decrease of impact value in Nb/MoSi$_2$ laminate composites. It was also found that in order to maximize the fracture energy of Nb/MoSi$_2$ laminate composites, interfacial shear strength and the thickness of interfacial reaction layer must be secured appropriately.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.71-75
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• 2001

The reaction stability of nickel with side-wall materials of SiO$_2$ and Si$_3$N$_4$ on p-type 4"(100) Si substrate were investigated. Ni on 1300 $\AA$ thick SiO$_2$ and 500 $\AA$ - thick Si$_3$N$_4$ were deposited. Then the samples were annealed at 400, 500, 750 and 100$0^{\circ}C$ for 30min, and the residual Ni layer was removed by a wet process. The interface reaction stability was probed by AES depth Profiling. No reaction was observed at the Ni/SiO$_2$ and Ni/Si$_3$N$_4$, interfaces at 400 and 50$0^{\circ}C$. At 75$0^{\circ}C$, no reaction occurred at Ni/SiO$_2$ interface, while $NiO_x$ and Si$_3$N$_4$ interdiffused at Ni/Si$_3$N$_4$ interface. At 100$0^{\circ}C$, Ni layers on SiO$_2$ and Si$_3$N$_4$ oxidized into $NiO_x$ and then $NiO_x$ interacted with side-wall materials. Once $NiO_x$ was formed, it was not removed in wet etching process and easily diffused into sidewall materials, which could lead to bridge effect of gate-source/drain.