• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.12
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• pp.1716-1721
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• 2014

In this paper, a study on automation method for the circuit/EM (Electro-Magnetic) simulation is carried out to analyze effectively the SI/PI (Signal Integrity/Power Integrity) issues which occur on circuits and/or PCBs (Printed Circuit Boards). For the automation of the circuit/EM simulation, algorithms performing each process of the SI/PI analysis automatically (such as ports setup, circuit definition and SI/PI evaluation) are developed; thereby automation system for the SI/PI analysis is constructed with the algorithms. The automation of the circuit/EM simulation is accomplished in the environment of the C/S (Client/Server) architecture in order to reduce resources such as high cost computers demanded for the SI/PI analysis. The automation method for the SI/PI analyses proposed in this paper reduces effort, time, and cost spent on the environment setup for simulation and the SI/PI analysis process. In addition, the proposed method includes automation of the documenting process, which organizes, records and displays the SI/PI analysis results automatically for users.

• Proceedings of the Korean Society For Composite Materials Conference
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• 1999.11a
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• pp.83-87
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• 1999

The fabrication process and thermal properties of 50~71vol% SiCp/Al metal matrix composites (MMCs) were investigated. The 50~71vol% SiCp/Al MMCs fabricated by pressure infiltration casting process showed that thermal conductivities were 118~170W/mK and coefficient of thermal expansion (CTE) were 9.5~$6.5{\times}10^{-6}/K$. Specially, the thermal conductivity and CTE of 71vol%SiCp/Al MMCs were 115~156W/mK and 6~$7{\times}10^{-6}/K$. respectively, which showed a improved themal properties than the conventional electronic packaging materials such as ceramics and metals.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.

• Journal of Powder Materials
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• v.7 no.1
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• pp.27-34
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• 2000

The fabrication process and mechanical properties of SiC particle prefrrms with high volume fraction ranged 50∼71% were investigated to make metal matrix composites for possible applications as heat sinks in electronic packares. The SiC particle preforms with 50∼71vol% of reinforcement were fabricated by a new modified process named ball milling and pressing method. The SiC particle performs were fabricated by ball milling of SiC particles with single sized of 48${\mu}$m in diameter or two different size of 8${\mu}$m and 48${\mu}$min diameter, with collodal SiO2 as inorgnic binder in distilled water, and the mixed slurries were cold pressed for consolidation into final prefom. The compressive strengths og calcined SiC particle prefoms increased from 20MPa to 155MPa with increasing the content of inorganis binder, temperature and time for calcination. The increase of compressive strength of SiC particle bridge the interfaces of two neighboring SiC particles.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.41-45
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• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• Journal of Korea Foundry Society
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• v.22 no.4
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• pp.184-191
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• 2002

This study aims to investigate on the effects of alloying elements and heat treatment on the microstructures, wear and heat resistance of Al-Si-Cu-Mg-(Ni)/SiCp prepared by the duplex process developed in previous study, which consists of squeeze infiltration (1st process) and squeeze casting (2nd process). The hardness of composite increased with decrease in SiCp size and Ni addition in both the heat exposured composite and the as-cast one. And the heat and wear resisting properties was improved by the SiCp reinforcement and the Ni addition. The wear amount of Al/SiCp composite decreased with decreasing in the size of silicon carbide particle.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.453-456
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• 1998

The electrical properties of $Si_{1-x}Ge_{x}$ samples have been investigated. The sample structures were grown by MBE (molecular geam epitaxy) with Ge mole-fraction of x=0.0, x=0.05, x=0.1, and x=0.2. To examine the influence of the thermal processing, the $O_{2}$ and N$_{2}$ process were performed at 800[.deg. C] and 900[.deg. C], respectively. After this thermal process, hall measurements have been done over a wide range of the ambient temperature between 320[.deg. K] and 10[.deg. K] to find the temperature dependence using the comparessed-He gas system. The Ge-rich layer has been formed at the $SiO_{2}$/SiGe interface and it has an effect on the hall mobility. And it has been found that hall mobility was increased by the $N_{2}$ annealing process comparing with dry oxidation process at both 800[.deg.C] and900[.deg. C].

• Journal of Institute of Convergence Technology
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• v.5 no.1
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• pp.1-5
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• 2015

SI thermochemical hydrogen production process achieves water splitting into hydrogen and oxygen through three chemical reactions. The process is comprised of three sections and one of them is HI decomposition into $H_2$ and $I_2$ called as Section III. The production of $H_2$ included processes involving EED for concentrating a product stream from Section I. Additionally an $I_2$ crystallization would be considered to reduce burden on EED by removing certain amount of $I_2$ out of a process stream prior to EED. In this study, the current thermodynamic model of SI process was briefly described and the calculation results of the applied Electrolytes NRTL model for phase equilibrium calculations was illustrated for ternary systems of Section III. We calculated temperature and heat duty of an $I_2$ crystallizer and heat duty of heaters using UVa model and heat balance equation of simulation tool. The results were expected to be used as operation information in optimizing HI decomposition process and setting up material balance throughout SI process.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.369-380
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• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• Journal of the Semiconductor & Display Technology
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• v.14 no.2
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• pp.61-65
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• 2015

SiC composite materials are usually used to very high temperature condition such as thermal protection system materials at space vehicles, combustion chambers or engine nozzles because they have high specific strength and good thermal properties at high temperature. One of the most widely used fabrication methods of SiC composites is the chemical vapor infiltration (CVI) process. During the process, chemical gases including Si are introduced into porous preform which is made by carbon fibers for infiltration. Since the processes take a very long time, it is important to reduce the process time in designing the reactors and processes. In this study, both the gas flow and heat transfer in the reactors during the processes are analyzed using a computational fluid dynamics method in order to design reactors and processes for uniform, high quality SiC composites. Effects of flow rate and heater temperature as process parameters to the infiltration process were examined.