• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1127-1130
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• 2003

The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.2
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• pp.118-128
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• 1994

Five alloys were selected randomly in the composition range showing the best shape memory effect in Fe-Mn-Si system reported by Murakami. The shape memory effects of those alloys were mainly investigated through the training treatment which consisted of the repetition of 2% tensile deformation at room temperature and subsequent annealing at $600^{\circ}C$ above $A_r$ temperature. At the same deformation degress in rolling $600^{\circ}C$-annealing for 1 hr. showed the best shape memory effect, and 10%-deformation degrees represented maxima of the shpae memory effects at all annealing temperatures, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$. The shape memory effects of the alloys were increased by increasing training cycle up to 5 cycles. This was because a large number of dislocations introduced by training process gave rise to increase in the austenite yield stress, and acted as nucleation sites for stress induced ${\varepsilon}$ martensite. The thermal cycling treatment, repetition of cooling in nitrogen at $-196{\circ}C$ and heating to $300^{\circ}C$ for 5 min., did not improve the shape memory effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.264-268
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• 2022

High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), off-state current (I_OFF), and gate leakage (I_G) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO₂ interfaces as well as eliminate the bulk trap in SiO₂. It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.288-288
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• 2013

Lithium-ion battery (LIB) is one of the most important rechargeable battery and portable energy storage for the electric digital devices. In particular, study about the higher energy capacity and longer cycle life is intensively studied because of applications in mobile electronics and electric vehicles. Generally, the LIB's capacity can be improved by replacing anode materials with high capacitance. The graphite, common anode materials, has a good cyclability but shows limitations of capacity (~374 mAh/g). On the contrary, silicon (Si) and germanium(Ge), which is same group elements, are promising candidate for high-performance LIB electrodes because it has a higher theoretical specific capacity. (Si:4200 mAh/g, Ge:1600 mAh/g) However, it is well known that Si volume change by 400% upon full lithiation (lithium insertion into Si), which result in a mechanical pulverization and poor capacity retention during cycling. Therefore, variety of nanostructure group IV elements, including nanoparticles, nanowires, and hollow nanospheres, can be promising solution about the critical issues associated with the large volume change. However, the fundamental research about correlation between the composition and structure for LIB anode is not studied yet. Herein, we successfully synthesized various structure of nanowire such as Si-Ge, Ge-Carbon and Si-graphene core-shell types and analyzed the properties of LIB. Nanowires (NWs) were grown on stainless steel substrates using Au catalyst via VLS (Vapor Liquid Solid) mechanism. And, core-shell NWs were grown by VS (Vapor-Solid) process on the surface of NWs. In order to characterize it, we used FE-SEM, HR-TEM, and Raman spectroscopy. We measured battery property of various nanostructures for checking the capacity and cyclability by cell-tester.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Applied Chemistry for Engineering
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• v.26 no.5
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• pp.543-548
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• 2015

Si/C/CNF composites as anode materials for lithium-ion batteries were examined to improve the capacity and cycle performance. Si/C/CNF composites were prepared by the fabrication process including the synthesis and magnesiothermic reduction of SBA-15 to obtain Si/MgO by ball milling and the carbonization of phenol resin with CNF and HCl etching. Prepared Si/C/CNF composites were then analysed by BET, XRD, FE-SEM and TGA. Among SBA-15 samples synthesized at reaction temperatures between 50 and $70^{\circ}C$, the SBA-15 at $60^{\circ}C$ showed the largest specific surface area. Also the electrochemical performances of Si/C/CNF composites as an anode electrode were investigated by constant current charge/discharge test, cyclic voltammetry and impedance tests in the electrolyte of LiPF6 dissolved in mixed organic solvents (EC : DMC : EMC = 1 : 1 : 1 vol%). The coin cell using Si/C/CNF composites (Si : CNF = 97 : 3 in weight) showed better capacity (1,947 mAh/g) than that of other composition coin cells. The capacity retention ratio decreased from 84% (Si : CNF = 97 : 3 in weight) to 77% (Si : CNF = 89 : 11 in weight). It was found that the Si/C/CNF composite electrode shows an improved cycling performance and electric conductivity.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.20 no.3
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• pp.349-356
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• 2022

Nuclear power plant decommissioning generates significant concrete waste, which is slightly contaminated, and expected to be classified as clearance concrete waste. Clearance concrete waste is generally crushed into rubble at the site or a satellite treatment facility for practical disposal purposes. During the process, workers are exposed to radiation from the nuclides in concrete waste. The treatment processes consist of concrete cutting/crushing, transportation, and loading/unloading. Workers' radiation exposure during the process was systematically studied. A shielding package comprising a cylindrical and hexahedron structure was considered to reduce workers' radiation exposure, and improved the treatment process's efficiency. The shielding package's effect on workers' radiation exposure during the cutting and crushing process was also studied. The calculated annual radiation exposure of concrete treatment workers was below 1 mSv, which is the annual radiation exposure limit for members of the public. It was also found that workers involved in cutting and crushing were exposed the most.

• Transactions of the Korean hydrogen and new energy society
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• v.21 no.5
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• pp.425-434
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• 2010

Integrated gasification combined cycle (IGCC) is an efficient and environment-friendly power generation system which is capable of burning low-ranked coals and other renewable resources such as biofuels, petcokes and residues. In this study some process modeling on a conceptual entrained flow gasifier was conducted using the ASPEN Plus process simulator. This model is composed of three major steps; initial coal pyrolysis, combustion of volatile components, and gasification of char particles. One of the purposes of this study is to develop an effective and versatile simulation model applicable to numerous configurations of coal gasification systems. Our model does not depend on the hypothesis of chemical equilibrium as it can trace the exact reaction kinetics and incorporate the residence time calculation of solid particles in the reactors. Comparisons with previously reported models and experimental results also showed that the predictions by our model were pretty reasonable in estimating the products and the conditions of gasification processes. Verification of the accuracy of our model was mainly based upon how closely it predicts the syngas composition in the gasifier outlet. Lastly the effects of change oxygen are studied by sensitivity analysis using the developed model.

• Transactions of the Korean hydrogen and new energy society
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• v.19 no.6
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• pp.490-497
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• 2008

For continuous operation of the sulfur-iodine(SI) thermochemical cycle, which is expected practical method for massive hydrogen production, suggesting operation conditions at steady state is very important. Especially, in the Bunsen reaction section, the Bunsen reaction as well as side reactions is occurring simultaneously. Therefore, we studied on the relation between the variation of compositions in product solution and side reactions. The experiments for Bunsen reaction were carried out in the temperature range, from 268 to 353 K, and in the $I_2/H_2O$ molar ratio of $0.094{\sim}0.297$ under a continuous flow of $SO_2$ gas. As the result, sulfur formed predominantly with increasing temperature and decreasing $I_2/H_2O$ molar ratios. The molar ratios of $H_2O/H_2SO_4$ and $HI/H_2SO_4$ in global system were decreased as the more side reaction occurred. A side reactions did not appear at $I_2/H_2O$ molar ratios, saturated with $I_2$, irrespective of the temperature change. We concluded that it caused by the increasing stability of an $I_{2x}H^+$ complex and a steric hindrance with increasing $I_2/HI$ molar ratios.