• 한국주조공학회지
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• 제30권1호
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• pp.34-45
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• 2010

The effects of alloy elements and cooling rate on the solidification path and the formation behavior of $\beta$ phase in Fe-containing Al-Si alloys were studied based on the thermodynamic analysis and the pertinent experiments. The thermodynamic calculation was systematically performed by using Thermo-Calc program. For the thermodynamic analysis in high alloy region of Al-Si-Fe ternary system, a thermodynamic database for Thermo-Calc was correctly updated and revised by the collected up-to-date references. For the thermodynamic-based prediction of various solidification paths in Fe-containing Al-Si system, liquidus projection of Al-Si-Fe ternary system, including isotherms, invariant, monovariant, bivariant reactions and equilibrium temperatures, was calculated and analyzed as functions of composition and temperature. The calculated results were compared to the experimental results using various casting specimens. In order to analyze various solidification sequences as functions of Si and Fe content, 4 representative alloy compositions, low Fe content in both low and high Si contents and high Fe content again in both low and high Si contents, were designed in this study. For better understanding of the influence of cooling rate on the formation behavior of $\beta$ phase, 4 alloys were solidified under furnace and rapidly cooled conditions. Cooling curves of solidified alloys were recorded by thermal analysis. Various important solidification events were evaluated using the first derivative-cooling curves. Microstructures of the casting samples were studied by the combined analysis of optical microscopy (OM) and scanning electron microscopy (SEM).

• 전기전자학회논문지
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• 제21권3호
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• pp.252-255
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• 2017

고온자전합성과 후열처리 공정으로 $Mo_xW_{1-x}Si_2$ 발열체를 제조하였다. $Mo_xW_{1-x}Si_2$ 발열체의 신뢰성을 검증하기 위해 가속수명시험을 수행하였으며, 수명시간을 Minitab 프로그램으로 추정하였다. 또한, 가속수명시험 후의 $Mo_xW_{1-x}Si_2$ 발열체의 고장분석을 전기적과 구조적 특성으로부터 수행하였다. 그 결과, $Mo_xW_{1-x}Si_2$ 발열체의 지배적인 고장 유형은 발열체 내부의 크랙 형성과 $SiO_2$ 보호층의 박리임을 확인하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집A
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• pp.27-31
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• 2001

Hi-Nicalon SiC fiber reinforced SiC composites (SiC/SiC) have been fabricated by the reaction sintering process. Braided Hi-Nicalon SiC fiber with double interphases of BN and SiC was used in this composite system. The microstructures and the mechanical properties of reaction sintered SiC/SiC composites were investigated through means of electron microscopies (SEM, TEM, EDS) and bending tests. The matrix morphology of reaction sintered SiC/SiC composites was composed of the SiC phases that the composition of the silicon and the carbon is different. The TEM analysis showed that the residual silicon and the unreacted carbon were finely distributed in the matrix region of reaction sintered SiC/SiC composites. Reaction sintered SiC/SiC composites also represented proper flexural strength and fracture energy, accompanying the noncatastrophic failure behavior.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.778-783
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by TEM, AES and AFM. Seocnd derivative spectra of Auger Si LVV overlapping peak provide useful information fot chemical state analysis of superthin film. The ONO film with dimension of tunnel oxide 23$\AA$, nitride 33$\AA$, and blocking oxide 40$\AA$ was fabricated. During deposition of the LPCVD nitride film on tunnel oxide, this thin oxide was nitrized. When the blocking oxide was deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$ (blocking oxide)/O-rich SiON(interface)/N-rich SiON(nitride)/ O-rich SiON(tunnel oxide)

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.354-361
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• 2008

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

• Current Photovoltaic Research
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• 제8권3호
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• pp.94-101
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• 2020

This study was trying to focus on achieving high efficiency of multi junction solar cell with thin film silicon solar cells. The proposed thin film Si-Ge/c-Si tandem junction solar cell concept with a combination of low-cost thin-film silicon solar cell technology and high-efficiency c-Si cells in a monolithically stacked configuration. The tandem junction solar cells using amorphous silicon germanium (a-SiGe:H) as an absorption layer of upper sub-cell were simulated through ASA (Advanced Semiconductor Analysis) simulator for acquiring the optimum structure. Graded Ge composition - effect of E_g profiling and inserted buffer layer between absorption layer and doped layer showed the improved current density (J_sc) and conversion efficiency (η). 13.11% conversion efficiency of the tandem junction solar cell was observed, which is a result of showing the possibility of thin film Si-Ge/c-Si tandem junction solar cell.

• Journal of Preventive Medicine and Public Health
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• 제57권3호
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• pp.242-251
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• 2024

Objectives: The aim of this study was to analyze the relationship between objective social isolation (SI) and unmet medical needs (UMN) in adults aged 19 and older. Methods: A cross-sectional analysis was conducted of 208 619 adults aged 19 and older, excluding missing data, using the 2019 Korea Community Health Survey. To analyze the association between objective SI and UMN, the chi-square test and logistic regression analysis were performed. Results: The prevalence of UMN was 1.14 times higher (odds ratio [OR], 1.14; 95% confidence interval [CI], 1.06 to 1.23) among those with SI than among those without SI, and the OR for groups with 5 SI types was 2.77 (95% CI, 1.86 to 4.12) compared to those with no SI types. In addition, a stratified analysis by age group showed that the association between SI and UMN existed even in groups under 64 years old. However, among those aged 65 and older, SI was associated with an OR of 1.53 (95% CI, 1.37 to 1.71) for UMN compared to non-SI. As the number of SI types increased, the prevalence of UMN also increased, indicating a strong association between SI and UMN in older adults. Conclusions: This study found that individuals with SI experienced UMN due to fear and anxiety about interpersonal relationships. Therefore, based on the results of this cross-sectional study, it is necessary to investigate the causal relationship between SI and UMN through future longitudinal data.

• 한국세라믹학회지
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• 제32권3호
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• pp.341-348
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• 1995

An analysis of the use of temperature profiles in the determination of the kinetic parameters of combustion synthesis of Ti5Si3 were investigated. From profile analysis, an apparent activation energy of 12KJ/mol was calculated. The Maximum heating rate achieved during 10wt% Ti5Si3 reaction by the product dilution method was approximately $1.5\times$104 K/s. Coupling this value with the measured wave velocity of 7.02 cm/s yields a maximum thermal gradient of 2.14$\times$103 K/cm. The value of tr (=t*) was calculated to be 1.2$\times$10-1 s and the value of td (=tx) was calculated to be 32.89 s. Using the definition of t* and the measured wave velocity, the effective thermal diffusivity, $\alpha$, was calculated to be 0.59$\times$10 $\textrm{cm}^2$/s. From these analysis, the power function, G, was also calculated.

• 한국세라믹학회지
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• 제48권6호
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• pp.559-564
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• 2011

In order to investigate the behavior of $SiO_2$ in the molybdenum silicide powders, crystal structure of these powders was measured by XRD, in addition, surface composition and surface phase (or chemical states) and microstructure were analysed by XPS and TEM, respectively. Mo-silicide powders containing $SiO_2$ were synthesized by SHS (Self-Propagating High-Temperature Synthesis) technique. In XRD result, according to increase of $SiO_2$ contents, the crystal structure for synthesized $MoSi_2$ powders was still typical $MoSi_2$ bct without any other phases. By XPS analysis, the surface of Mo and Si source powders was covered with $MoO_3$ and $SiO_2$, respectively, and the surface of synthesized $MoSi_2$ powder was also covered with $MoO_3$ and $SiO_2$, which were stable oxides at room temperature. However, according to increase of $SiO_2$ addition, $MoSi_2$ phase in XPS spectra decreased and $SiO_2$ phase increased relatively in synthesized $MoSi_2$ powders. From the results by XPS and XRD, we found that the existent $SiO_2$ has amorphous structure. In the microstructure, the small particulates of the synthesized products added $SiO_2$ agglomerated together to form larger clusters (from ~10 nm to ~1 ${\mu}m$). From TEM, XPS, and XRD results, we found that the out layer of agglomeration of synthesized $MoSi_2$ powder is surrounded by amorphous $SiO_2$.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.