• 한국표면공학회지
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• 제49권5호
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• pp.467-471
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• 2016

In order to investigate the Na gettering, PSG/$SiO_2$/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/$SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/$SiO_2$/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/$SiO_2$ interface and at the $SiO_2$/Al-1%Si interfaces. Na impurity gettering in PSG/$SiO_2$/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be $SiO_2$.

• Advances in materials Research
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• 제3권1호
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• pp.259-269
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• 2014

The boron-nitrogen-containing phenol-formaldehyde resin (BNPFR)/$SiO_2$ nanocomposites (BNPFR/$SiO_2$) were synthesized in-situ, and structure of BNPFR/$SiO_2$ nanocomposites was characterized by FTIR, XRD and TEM. The loss modulus peak temperature $T_p$ of BNPFR/$SiO_2$ nanocomposites cured with different nano-$SiO_2$ content are determined by torsional braid analysis (TBA). The thermal degradation kinetics was investigated by thermogravimetric analysis (TGA). The results show that nano-$SiO_2$ particulate with about 50 nm diameter has a more uniformly distribution in the samples. The loss modulus peak temperature $T_p$ of BNPFR/$SiO_2$ nanocomposite is $214^{\circ}C$ when nano-$SiO_2$ content is 6 wt%. The start thermal degradation temperature $T_{di}$ is higher about $30^{\circ}C$ than pure BNPFR. The residual rate (%) of nanocomposites at $800^{\circ}C$ is above 40 % when nano-$SiO_2$ content is 9 %. The thermal degradation process is multistage decomposition and following first order.

• 한국진공학회지
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• 제17권3호
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• pp.215-219
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• 2008

실리콘 웨이퍼 위에 Plasma Enhanced Chemical Vapor Deposition (PECVD) 방법으로 증착 된 SiNx 박막의 수소 함량을 측정하였다. 제작된 SiNx 박막은 Fourier Transform Infrared Spectroscopy (FT-IR) 사용하여 박막의 수소함량과 결합상태를 확인하였으며, Atomic Force Microscopy (AFM) 측정을 통하여 박막의 표면 거칠기를 비교, 시료의 조성비 평가를 위하여 Rutherford Backscattering Spectrometry (RBS)을 사용하였다. 또한 SiNx박막의 조성확인을 위하여 Photoluminescence(PL)를 이용하여 FT-IR spectrum의 결과와 비교 해석하였다. FT-IR에서 NH의 수소함량(at%)이 0.92 %에서 0.64 %로 낮아질 수록 AFM을 이용한 표면 거칠기는 12.8 $\AA$에서 10.8 $\AA$로 낮아지고, Si양이 상대적으로 많아지는 것을 PL에서 확인하였으며, RBS에서도 시뮬레이션을 통해 비슷한 결과를 얻을 수 있었는데, 이는 FT-IR을 사용함으로써 SiNx 박막의 수소 함량의 측정이 가능하다는 것을 보여주므로 단위공정에서 신속하게 SiNx 박막 분석이 가능함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.372-375
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• 2003

MCA deflection control is a important technology for the development of MEMS applications. In this study, deflection analysis at the MLA/Si diaphragm was investigated by Finite Element Method. Analysis of Si diaphragm combined with MCA has been implemented into the ANSYS (Solid5 and Solid45). On the basis of this structure, deflection versus MCA number of layers has been modelled and MCA/Si contact area characteristics with different diaphragm conditions were analyzed. Consequently, it is expected that fabrication technology of MCA/Si diaphragm could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• 한국주조공학회지
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• 제26권3호
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• pp.140-145
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• 2006

Sr, added in the hypereutectic Al-Si alloys, is absorbed on the surfaces of primary Si as well as eutectic Si, and can change the growth mode of primary Si from non-faceted to faceted mode, as the amount of Sr increases larger than 0.04 wt.%, even though it cannot affect the grain size of primary Si, significantly. The EBSD analysis shows that the traction of ${\Sigma}3$ boundary(twin boundary) increases as the amount of Sr in the hypereutectic Al-Si alloys increase until the over-modification occurs at 1.6 wt.%Sr and proves that the change in growth mode of primary Si results from the change of TPRE growth to IIT growth.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.79-82
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• 한국분말재료학회지
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• 제6권1호
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• pp.56-61
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• 1999

The plastic deformation behaviors for powder extrusion of rapidly soildified Al-Si-Fe alloys at high temperature were investigated. During extrusion of Al-Si-Fe alloys, primary Si and intermetallic compound in matrix are broken finely. Additionally, during extrusion metastable $\delta$ phase($Al_4SiFe_2$) intermetallic compound disappears and the equilibrium $\beta$ phase($Al_5FeSi_2$) is formed. In gereral, it was diffcult to establish optimum process variables for extrusion condition through experimentation, because this was costly and time-consuming. In this paper, in order to overcome these problems, we compared the experimental results to the finite element analysis for extrusion behaviors of rapidly solidified Al-Si-Fe alloys. This ingormation is expected to assist in improving rapidly solidified Al-Si alloys extrusion operations.

• 한국표면공학회지
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• 제50권3호
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• pp.219-224
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• 2017

The K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films was investigated using SIMS(secondary ion mass spectrometry) and XPS(X-ray Photoelectron Spectroscopy) analysis. DC magnetron sputter techniques and APCVD(atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and $SiO_2/PSG/SiO_2$ passivations, respectively. Heat treatment was carried out at $400^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of K, Al, Si, P and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze binding energies of Si and P elements in PSG passivation layers. K peaks were observed throughout the $PSG/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the $PSG/SiO_2$ interfaces. K gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and P elements in PSG passivation appears to be $SiO_2$ and $P_2O_5$, respectively