• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.12
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• pp.25-31
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• 2018

Selective Laser Melting is one of the representative 3D printing techniques for handling metal materials. The main factors influencing the characteristics of structures fabricated by the SLM method include the build-up angle of structures, laser power, laser scan speed, and scan spacing. In this study, the tensile properties of AlSi10Mg alloys were investigated by considering the build-up angle of tensile test specimens, laser scanning speed and scan spacing as variables. The yield stress, tensile strength, and elongation were considered as tensile properties. From the test results, it was confirmed that the yield stress values were lowered in the order of 0, 45, and 90 based on the manufacturing direction of the tensile specimen. The maximum yield stress value was obtained at 1870 mm / min based on the laser scan speed. The yield stress size decreased with decreasing scan speed. Based on the laser scan spacing, as the value increases, the yield stress increases, but the variation is smaller than the other test criteria. The tendency of the tensile strength and elongation variation depending on the test conditions was difficult to understand.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.158-161
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• 2006

SiC materials have been extensively studied for high temperature components in advanced energy conversion system and advanced gas turbine. However, the brittle characteristics of SiC such as law fracture toughness and law strain-to fracture impose a severe limitation on the practical applications of SiC materials. SiC/SiC composites can be considered as a promising candidate in various structural materials, because of their good fracture toughness. In this composite system, the direction of SiC fiber will give an effect to the mechanical properties. It is therefore important to control a properdirection of SiC fiber for the fabrication of high performance SiC/SiC composites. In this study, unidirection and two dimension woven structures of SiC/SiC composites were prepared starting from Tyranno SA fiber. SiC matrix was obtained by nano-powder infiltration and transient eutectoid (NITE) process. Effect of microstructure and density on the sintering temperature in NITE-SiC/SiC composites are described and discussed with the fiber direction of unidirection and two dimension woven structures.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.565-570
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• 1998

SiCp/6061AI 복합재료의 파괴인성을 평가하기 위하여 정적파괴인성에 대해서는 복수시험편법을, 동적파괴인성시험에 대해서는 stop block법을 실시하였다. 주균열은 예비균열의 선단에서 시험편두께방향 전역에 걸쳐서 일시에 발생하는 것이 아니고, 균열발생의 초기단계에서 국부적으로 형성된 균열이 시험편두께방향으로의 균열의 확장을 완료한 후 주균열로 이행해 간다. 정적 및 동적시험에서 컴플라이언스변화율법에 의해 검출된 균열발생점은 균열확장의 완료점과 거의 일치하고 있기 때문에 본 재료의 파괴인성 결정에 유효하다. 본 재료에서 동적파괴인성치는 정적파괴인성치보다 크게 나타났다. 이것은 동적충격시 입자파괴에 의한 에너지의 흡수.분산효과와 균열진전경로의 큰 편향에 기인한다고 생각된다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.93-97
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• 2003

The crystallization behavior of amorphous silicon is affected by direction and intensity of electric field in FALC（Field-Aided Lateral Crystallization). Electric field was calculated in a simplified model using conductivity data of Mo, a-Si, $SiO_2$and boundary conditions for electric potential at the electrodes. The magnitude of electric field intensity in each corner of cathode was much larger than that in the center of patterns, and the electric field direction was 50~60 degree outside to cathode. And electric field intensity at a relatively small pattern was larger than that of a large pattern.

• Korean Journal of Materials Research
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• v.8 no.1
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• pp.38-44
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• 1998

RF 스퍼터링법으로 (001)Si 기판위에 AIN완충층을 성장하고, 그 위에 HVPE법으로 GaN를 성장하였다. GaN의 성장률은 103$0^{\circ}C$의 온도에서 AIN완충충의 두께가 각각 500$\AA$과 2000$\AA$ 일때 65$\mu\textrm{m}$/hr와 84$\mu\textrm{m}$/hr로서 AIN완충층의 두께가 증가함에 따라 증가하였다. AIN완충층위에서 GaN의 성장초기에는 수 $\mu\textrm{m}$크기의 결정들이 임의의 방향으로 성장된 후 성장시간이 경과함에 따라 수평방향으로의 성장에 의하여 합쳐지게 되며, c-축 방향으로 배향된 평탄한 표면을 갖는 다결정체가 성장되었다. 20K의 온도에서 측정된 광루미네센스(PL)스펙트럼에서는 3.482eV에서 자유여지자에 의한 발광과 3.7472eV에서 반치폭이 9.6meV인 도너 구속여기자 발광 및 3.27eV 부근에서의 도너-억셉터 쌍 사이의 재결합과 LO포는 복제에 의한 발광이 나타났다. 그러나 2.2eV부근에서의 황색발광은 관찰되지 않았다.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.84-88
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• 1999

The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different vacancy-related defects generation area. The behavior of oxygen precipitation in radial direction is strongly dependent on the size of vacancy rich area which is related with crystal growth condition. Oxygen precipitation rate is more enhanced in vacancy rich area than that of interstitial rich area. And anomalous oxygen precipitation is generated in the marginal bands of vacancy and interstial area. In V/I boundary, however, oxygen precipitation is suppressed to nearly perfect.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.116-116
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• 2011

오늘날 표시장치는 경량, 고밀도, 고해상도 대면적화의 요구에 의해 TFT-LCD의 발전이 이루어졌다. TFT에는 반도체 재료로서, Poly-Si을 사용하는 Poly-Si TFT와 a-Si:H를 이용하는 a-Si;H TFT가 있는데 a-Si는 $350^{\circ}C$ 이하의 저온으로 제작이 가능하여 많이 사용되고 있다. 이러한 방향에 맞추어 bottom gate 구조의 a-Si TFT 실험을 진행하였다. P-type silicon substrate ($0.01{\sim}0.02{\Omega}-cm$)에 gate insulator 층인 SiNx (SiH4 : NH3 = 6:60)를 200nm 증착하였다. 그리고 그 위에 active layer 층인 a-Si (SiH4 : H2 : He =2.6 : 10 : 100)을 다른 RF power를 적용하여 100 nm 증착하였다. 그 위에 Source와 Drain 층은 Al 120 nm를 evaporator로 증착하였다. active layer, gate insulator 층은 ICP-CVD 장비를 이용하여 증착하였으며, 공정온도는 $300^{\circ}C$ 로 고정하였다. active layer층 증착시 RF power는 100W, 300W, 500W, 600W로 가변하였고, width/length는 100 um/8um로 고정하였다. 증착한 a-Si layer층을 Raman spectroscope, SEM 측정 하였으며, TFT 제작 후, VG-ID, VD-ID 측정을 통해 전기적 특성인 Threshold voltage, Subthreshold swing, Field effect mobility, ON/OFF current ratio를 비교해 보았다.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.575-577
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• 2000

(100) single crystal Si은 좋은 anisotropy etching 성질과 기계적 강도를 가지고 있어 MEMS 구조용 소재로 사용되고 있다. (100) Si의 신뢰성 평가를 위하여 필요한 탄성계수를 측정하고 반복동작에 의한 응력에 의한 파손특성을 평가하기 위하여 micromachining을 통해 resonator를 제작하였다. Resonator의 공진주파수를 분석함으로써 탄성계수를 추하고자 하였으며 반복응력에 대한 파괴특성을 평가하기 위하여 공진 상태에서 파괴가 일어날 때까지의 사이를 수를 측정함으로써 반복음력에 대한 Si의 피로특성을 평가하고자 하였다. 실험 결과 (100) Si의 <110> 방향으로의 탄성 개수를 측정할 수 있었으며 Si의 미세파손의 응력에 대한 의존성을 평가할 수 있었다. 평가결과 Si의 미세파손 메커니즘은 억제된 균열의 진전에 의한 subcritical crack에 의한 피로파괴 현상보다는 과도한 스트레스에 의한 순간적인 균열전파에 의해 지배됨을 관찰할 수 있었다.