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EBG Structure Using Bridge Line in the Signal Transmission Plane (신호 전달 평면의 브릿지 라인을 이용한 EBG 구조)

  • Kim, Byung-Ki;Ha, Jung-Rae;Lee, June-Sang;Bae, Hyeon-Ju;Kwon, Jong-Hwa;Nah, Wan-Soo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.7
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    • pp.786-795
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    • 2010
  • In this paper, we propose a new EBG structure that the two unit cells are connected by the bridge line in signal transmission plane. The SSN of the power plane is reduced effectively by via holes and bridge lines connecting the unit cells. The superior signal transfer characteristic is shown between the signal lines in the signal transmission plane. The proposed EBG structure contains 1.2 GHz cut-off frequency and less than -30 dB suppression in the 8.3 GHz broad bandwidth. In addition, To improve the SI(Signal Integrity) in signal transmission plane keeping the same bandstop frequency range, the optimized location of the reference plane is proposed.

A Study of Effectiveness Analysis for Wide-Area Emergency Vehicle Preemption System : Targeting on Gyeonggi-Do (광역 긴급차량 우선신호시스템 효과분석 연구: 경기도를 중심으로)

  • Min Kim;Jae Seong Hwang;Choul Ki Lee;Byeong Kwon Choi
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.23 no.4
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    • pp.67-76
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    • 2024
  • This study conducted an operational evaluation of an emergency vehicle preemption system that can be operated as a wide-area unit beyond the boundaries of local governments. Analyzed the speed reduction rate of emergency vehicle dispatch data and traffic speed data to analyze the speed reduction rate of emergency vehicles operating in a wide area and region. In Goyang City, local dispatches were reduced by 50.8% and regional dispatches by 55.8%, while in Paju City, local dispatches were reduced by 55.1% and regional dispatches by 62.5%. The wide-area emergency vehicle preemption system proved to be effective when emergency vehicles were dispatched outside of local boundaries, such as confirming that there were many dispatches from Paju-si to Goyang-si when there were no large hospitals nearby. This study aims to help spread the wide-area emergency vehicle preemption system. Translated with DeepL.com (free version)

Effect of Lithium Contents and Applied Pressure on Discharge Characteristics of Single Cell with Lithium Anode for Thermal Batteries (리튬 함량 및 단위 셀 압력이 열전지용 리튬 음극의 방전 성능에 미치는 영향)

  • Im, Chae-Nam;Ahn, Tae-Young;Yu, Hye-Ryeon;Ha, Sang Hyeon;Yeo, Jae Seong;Cho, Jang-Hyeon;Yoon, Hyun-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.2
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    • pp.165-173
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    • 2019
  • Lithium anodes (13, 15, 17, and 20 wt% Li) were fabricated by mixing molten lithium and iron powder, which was used as a binder to hold the molten lithium, at about $500^{\circ}C$ (discharge temp.). In this study, the effect of applied pressure and lithium content on the discharge properties of a thermal battery's single cell was investigated. A single cell using a Li anode with a lithium content of less than 15 wt% presented reliable performance without any abrupt voltage drop resulting from molten lithium leakage under an applied pressure of less than $6kgf/cm^2$. Furthermore, it was confirmed that even when the solid electrolyte is thinner, the Li anode of the single cell normally discharges well without a deterioration in performance. The Li anode of the single cell presented a significantly improved open-circuit voltage of 2.06 V, compared to that of a Li-Si anode (1.93 V). The cut-off voltage and specific capacity were 1.83 V and $1,380As\;g^{-1}$ (Li anode), and 1.72 V and $1,364As\;g^{-1}$ (Li-Si anode). Additionally, the Li anode exhibited a stable and flat discharge curve until 1.83 V because of the absence of phase change phenomena of Li metal and a subsequent rapid voltage drop below 1.83 V due to the complete depletion of Li at the end state of discharge. On the other hand, the voltage of the Li-Si anode cell decreased in steps, $1.93V{\rightarrow}1.72V(Li_{13}Si_4{\rightarrow}Li_7Si_3){\rightarrow}1.65V(Li_7Si_3{\rightarrow}Li_{12}Si_7)$, according to the Li-Si phase changes during the discharge reaction. The energy density of the Li anode cell was $807.1Wh\;l^{-1}$, which was about 50% higher than that of the Li-Si cell ($522.2Wh\;l^{-1}$).

Rice Yield Estimation Using Sentinel-2 Satellite Imagery, Rainfall and Soil Data (Sentinel-2 위성영상과 강우 및 토양자료를 활용한 벼 수량 추정)

  • KIM, Kyoung-Seop;CHOUNG, Yun-Jae;JUN, Byong-Woon
    • Journal of the Korean Association of Geographic Information Studies
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    • v.25 no.1
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    • pp.133-149
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    • 2022
  • Existing domestic studies on estimating rice yield were mainly implemented at the level of cities and counties in the entire nation using MODIS satellite images with low spatial resolution. Unlike previous studies, this study tried to estimate rice yield at the level of eup-myon-dong in Gimje-si, Jeollabuk-do using Sentinel-2 satellite images with medium spatial resolution, rainfall and soil data, and then to evaluate its accuracy. Five vegetation indices such as NDVI, LAI, EVI2, MCARI1 and MCARI2 derived from Sentinel-2 images of August 1, 2018 for Gimje-si, Jeollabuk-do, rainfall and paddy soil-type data were aggregated by the level of eup-myon-dong and then rice yield was estimated with gamma generalized linear model, an expanded variant of multi-variate regression analysis to solve the non-normality problem of dependent variable. In the rice yield model finally developed, EVI2, rainfall days in September, and saline soils ratio were used as significant independent variables. The coefficient of determination representing the model fit was 0.68 and the RMSE for showing the model accuracy was 62.29kg/10a. This model estimated the total rice production in Gimje-si in 2018 to be 96,914.6M/T, which was very close to 94,470.3M/T the actual amount specified in the Statistical Yearbook with an error of 0.46%. Also, the rice production per unit area of Gimje-si was amounted to 552kg/10a, which was almost consistent with 550kg/10a of the statistical data. This result is similar to that of the previous studies and it demonstrated that the rice yield can be estimated using Sentinel-2 satellite images at the level of cities and counties or smaller districts in Korea.

DATA and FT-IR absorption spectra of PbO-Bi2O3-B2O3-SiO2 glasses (PbO-Bi2O3-B2O3-SiO2 유리계 열시차분석과 FT-IR 흡수 스펙트럼)

  • Lee, Chan-Ku;Lee, Su-Dae
    • Journal of Korean Ophthalmic Optics Society
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    • v.8 no.1
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    • pp.17-22
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    • 2003
  • The experimental FT-IR spectra and DTA curves of the $PbO-Bi_2O_3-B_2O_3-SiO_2$ glasses have been investigated. The composition ratio dependence of glass transition temperature showed that the structure of this glass system changes at 60 mol% $Bi_2O_3$. We have observed that the FT-IR spectra of the investigated samples with high bismuth content are dominated by bands associated to the structural units of the heaviest cation, $Bi^{3+}$ and the boron atoms in the treated samples are three and four coordinated even for very high $Bi_2O_3$ content. The low intensity of these non-bridging oxygen bands, for high PbO content glasses, can be attributed to the strong network-forming roles of PbO. The glasses absorption bands exhibited a greater change in intensities on crystallization.

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Pulse Inductively Coupled Plasma를 이용한 Through Silicon Via (TSV) 형성 연구

  • Lee, Seung-Hwan;Im, Yeong-Dae;Yu, Won-Jong;Jeong, O-Jin;Kim, Sang-Cheol;Lee, Han-Chun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.18-18
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    • 2008
  • 3차원 패키징 System In Package (SIP)구조에서 Chip to Chip 단위 Interconnection 역할을 하는 Through Silicon Via(TSV)를 형성하기 위하여 Pulsating RF bias가 장착된 Inductively Coupled Plasma Etcher 장비를 이용하였다. 이 Pulsating 플라즈마 공정 방법은 주기적인 펄스($50{\sim}500Hz$)와 듀티($20{\sim}99%$) cycle 조절이 가능하며, 플라즈마 에칭특성에 영향을 주는 플라즈마즈마 발생 On/Off타임을 조절할 수 있다. 예를 들면, 플라즈마 발생 Off일 경우에는 이온(SFx+, O+)과 래디컬(SF*, F*, O*)의 농도 및 활성도를 급격하게 줄이는 효과를 얻을 수가 있는데, 이러한 효과는 식각 에칭시, 이온폭격의 손상을 급격하게 줄일 수 있으며, 실리콘 표면과 래디컬의 화학적 반응을 조절하여 에칭 측벽 식각 보호막 (SiOxFy : Silicon- Oxy- Fluoride)을 형성하는데 영향을 미친다. 그리고, TSV 형성에 있어서 큰 문제점으로 지적되고 있는 언더컷과 수평에칭 (Horizontal etching)을 개선하기 위한 방법으로, Black-Siphenomenon을 이번 실험에 적용하였다. 이 Black-Si phenomenon은 Bare Si샘플을 이용하여, 언더컷(Undercut) 및 수평 에칭 (Horizontal etching)이 최소화 되는 공정 조건을 간편하게 평가 할 수 있는 방법으로써, 에칭 조건 및 비율을 최적화하는 데 효율적이었다. 결과적으로, Pulsating RF bias가 장착된 Inductively Coupled Plasma Etcher 장비를 이용한 에칭실험은 펄스 주파수($50{\sim}500Hz$)와 듀티($20{\sim}99%$) cycle 조절이 가능하여, 이온(SFx+, O+)과 래디컬(SF*, F*, O*)의 농도와 활성화를 조절 하는데 효과적이었으며, Through Silicon Via (TSV)를 형성 하는데 있어서 Black-Si phenomenon 적용은 기존의 Continuous 플라즈마 식각 결과보다 향상된 에칭 조건 및 에칭 프로파일 결과를 얻는데 효과적이었다.

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A Guide to Education on Unit Transformation in University Liberal Arts Education (대학 교양교육에서 단위변환에 대한 교육 방향 제시)

  • kyung a jeong;hye jeong kim
    • Journal of Integrative Natural Science
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    • v.16 no.4
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    • pp.133-138
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    • 2023
  • After the SI system of units was adopted as an international system of units, Korea made a lot of efforts such as administrative and educational guidance on the traditional units that had been used so far. In addition, from July 1, 2007, the government has cracked down on the denotation of non-statutory units of measurement as standard units or auxiliary units in commercial transactions. However, non-statutory weighing units are still used in other forms. It is believed that this is because non-statutory units (= our traditional units) are permeated in our lives and are convenient to use. The general public still finds it difficult to use and mark the SI system of units correctly. This is not a problem unique to Korea. However, if you look at the books that are currently used as university physics textbooks, the SI system of units and the non-legal units of other countries are marked in such a way that they can be accurately converted. Only the traditional units of our country are disappearing under the pretext of unit unification. Accordingly, we propose that our units should not be neglected in university education, but should be labeled together. The purpose of this study is to raise the necessity of reorganizing the unit conversion between the SI unit system and the traditional life improvement unit, which continues to be the convenience of life, and applying it in university physics education to enable the conversion with our traditional unit, and to educate the importance of the meaning and function of our traditional unit.

Study of Nutrient Uptake and Physiological Characteristics of Rice by $^{15}N$ and Purified Si Fertilization Level in a Transplanted Pot Experiment (중질소와 순수규산 시비수준이 벼의 양분흡수 및 생리적 특성에 미치는 영향)

  • Cho Young-Son;Jeon Won-Tae;Park Chang-Young;Park Ki-Do;Kang Ui-Gum
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.51 no.5
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    • pp.408-419
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    • 2006
  • A pot experiment was conducted for two years to evaluate the effects of purified Si fertilization combined with $^{15}N$ on the nutrient uptake, plant growth characteristics, and photosynthetic characteristics of rice in water melon cultivated soil. In 2002, plant height was positively affected at 25 DAT (Day After Transplanting) by Si fertilization in 100%N treatment. However, in 2003, plant height at 25 DAT was negatively affected by Si fertilization in low N level but it was reversed in high N level with initial increase of plant height. Tiller number per pot was positively affected by N and Si fertilization level, especially for high N fertilized treatment. Leaf color was positively affected by Si fertilizatlon in no N fertilized pots, however, Si was not effected in 50%N and 100%N fertilized treatments. N harvest index (NHI) increased with increased Si fertilization in no N plots, however it decreased with increasing of N fertilization level. Nitrogen use efficiency (NUE) decreased with increasing of fertilized N but Si fertilization increased NUE in 50%N plots, however, it was not different by the Si fertilization level in 100%N plots. In 50%N+200%Si plots, NUE was greatest with 130 and shoot N content was $16.2g-N/m^{2}$. N content ($g/m^{2}$) in rice plant increased with increasing Si fertilization in no N plots at panicle initiation stage, 50 and 100%N plots at heading stage and all N treatment at harvesting time. This was mostly more efficient in late growth stage than early growth stage. The concentration (%) of P and K increased with increasing N fertilization level at heading and harvesting but it was not significantly different by the Si fertilization treatment except a little decreasing with increasing Si fertilization level at heading. Potassium content was also not significantly related with N fertilization level except increasing with Si fertilization level at panicle initiation stage. Plant Ca content (%) decreased with increasing of Si fertilization at heading stage and Si fertilization increased Ca content at panicle initiation stage and heading stage and it increased with increasing of Si fertilization level. Photosynthetic activity was not directly related with Si fertilization amount, however, Fluorescent factors, Fv'/Fm' and PsII, were positively affected by Si fertilization level. In conclusion, N fertilization in Si 200% fertilized condition should be reduced by about 50% level of recommended N fertilization for rice cropping in green-house water-melon cultivated paddy field. However, improvement of Ps by Si fertilization could not be attributed to Ps activity in the same leaf area but because of increased total leaf area per pot improved fluorescent characteristics.

Fabrication of a-Si:H/a-Si:H Tandem Solar Cells on Plastic Substrates (플라스틱 기판 위에 a-Si:H/a-SiGe:H 이중 접합 구조를 갖는 박막 태양전지 제작)

  • Kim, Y.H.;Kim, I.K.;Pyun, S.C.;Ham, C.W.;Kim, S.B.;Park, W.S.;Park, C.K.;Kang, H.D.;You, C.;Kang, S.H.;Kim, S.W.;Won, D.Y.;Choi, Y.;Nam, J.H.
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.104.1-104.1
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    • 2011
  • 가볍고, 유연성(flexibility)을 갖는 박막(thin film)형 플랙서블 태양전지(flexible solar cell)는 상황에 따른 형태의 변형이 가능하여, 휴대가 간편하고, 기존 혹은 신규 구조물의 지붕(rooftop)등에 설치가 용이하여, 차세대 성장 동력 분야에서 각광받고 있다. 그러나 아직까지 플랙서블 태양전지는 제작시 열에 의한 기판의 변형, 기판 이송시 너울 현상, 대면적 패터닝(patterning) 기술 등 많은 어려움 등으로 웨이퍼나 글라스 기판에 제조된 태양전지 대비 낮은 광전환 효율을 갖는다. 따라서 본 연구에서는 플랙서플 태양전지 성능개선을 위해 3.5세대급 ($450{\times}450cm^2$) 스퍼터(sputter), 금속유기 화학기상장치 (MOCVD), 플라즈마 화학기상장치 (PECVD), 레이저 가공장치 (Laser scriber)를 이용하여 a-Si:H/a-SiGe:H 이중접합(tandem)을 갖는 태양전지를 제작하였고, 광 변환효율 특성을 평가하였다. 전도도(conductivity), 라만(Raman)분광 및 UV/Visible 분광 분석을 통하여 박막의 전기적, 구조적, 광학적 물성을 평가하여 단위박막의 물성을 최적화 했다. 또한 제작된 태양전지는 쏠라 시뮬레이터 (Solar Simulator)를 이용하여 성능 평가를 수행하였고, 상/하부층의 전류 정합 (current matching)을 위해 외부양자효율 (external quantum efficiency) 분석을 수행하였다. 제작된 이중접합 접이식 태양전지로 소면적($0.25cm^2$)에서 8.7%, 대면적($360cm^2$ 이상) 8.0% 이상의 효율을 확보하였으며, 성능 개선을 위해 대면적 패턴 기술 향상 및 공정 기술 개선을 수행 중이다.

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InGaN/GaN Blue LED device 제조시 ALD (Atomic Layer Deposition) 방법으로 증착된 Al2O3 Film의 Passivation 효과

  • Lee, Seong-Gil;Bang, Jin-Bae;Yang, Chung-Mo;Kim, Dong-Seok;Lee, Jeong-Hui
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.211-212
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    • 2010
  • GaN 기반의 상부발광형 LED는 동작되는 동안 생기는 전기적 단락, 그리고 칩 위의 p-형 전극과 n-형 전극 사이에 생기는 누설전류 및 신뢰성 확보를 위하여 칩 표면에 passivation 층을 형성하게 된다. SiO2, Si3N4와 같은 passivation layers는 일반적으로 PECVD (Plasma Enhanced Chemical Vapor Deposition)공정을 이용한다, 하지만 이는 공정 특성상 plasma로 인한 damage가 유발되기 때문에 표면 누설 전류가 증가 한다. 이로 인해 forward voltage와 reverse leakage current의 특성이 저하된다. 본 실험에서는 원자층 단위의 박막 증착으로 인해 PECVD보다 단차 피복성이 매우 우수한 PEALD(Plasma Enhanced Atomic Layer Deposition)공정을 이용하여 Al2O3 passivation layer를 증착한 후, 표면 누설전류와 빛의 출력 특성에 대해서 조사해 보았다. PSS (patterned sapphire substrate) 위에 성장된 LED 에피구조를 사용하였고, TCP(Trancformer Copled Plasma)장비를 사용하여 에칭 공정을 진행하였다. 이때 투명전극을 증착하기 위해 e-beam evaporator를 사용하여 Ni/Au를 각각 $50\;{\AA}$씩 증착한 후 오믹 특성을 향상시키기 위하여 $500^{\circ}C$에서 열처리를 해주었다. 그리고 Ti/Au($300/4000{\AA}$) 메탈을 사용하여 p-전극과 n-전극을 형성하였다. Passivation을 하지 않은 경우에는 reverse leakage current가 -5V 에서 $-1.9{\times}10-8$ A 로 측정되었고, SiO2와 Si3N4을 passivation으로 이용한 경우에는 각각 $8.7{\times}10-9$$-2.2{\times}10-9$로 측정되었다. Fig. 1 에서 보면 알 수 있듯이 5 nm의 Al2O3 film을 passivation layer로 이용할 경우 passivation을 하지 않은 경우를 제외한 다른 passivation 경우보다 reverse leakage current가 약 2 order ($-3.46{\times}10-11$ A) 정도 낮게 측정되었다. 그 이유는 CVD 공정보다 짧은 ALD의 공정시간과 더 낮은 RF Power로 인해 plasma damage를 덜 입게 되어 나타난 것으로 생각된다. Fig. 2 에서는 Al2O3로 passivation을 한 소자의 forward voltage가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 0.07 V와 0.25 V씩 낮아지는 것을 확인할 수 있었다. 또한 Fig. 3 에서는 Al2O3로 passivation을 한 소자의 output power가 SiO2와 Si3N4로 passivation을 한 소자보다 각각 2.7%와 24.6%씩 증가한 것을 볼 수 있다. Output power가 증가된 원인으로는 향상된 forward voltage 및 reverse에서의 leakage 특성과 공기보다 높은 Al2O3의 굴절률이 광출력 효율을 증가시켰기 때문인 것으로 판단된다.

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