• Title/Summary/Keyword: SGGG

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Growth of Bi:YIG Thick Films by Change of PO/Bi2O3 Molar Ratio (PO/Bi2O3 변화에 따른 Bi:YIC 단결정 후박의 성장)

  • 윤석규;김근영;김용탁;정현민;임영민;윤대호
    • Journal of the Korean Ceramic Society
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    • v.39 no.6
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    • pp.589-593
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    • 2002
  • The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.

Growth and Characteristics of YIG, Bi:YIG, TbBi:YIG Single Crystal Thick Films (YIG, Bi:YIG, TbBi:YIG 단결정 후막의 성장과 특성)

  • 윤석규;김근영;김명진;이형만;김회경;윤대호
    • Journal of the Korean Ceramic Society
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    • v.40 no.7
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    • pp.672-676
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    • 2003
  • The single crystalline thick films of Y$_3$Fe$\sub$5/O$\sub$12/(YIG), Y$_3$Fe$\sub$5/O$\sub$12/(Bi:YIG), (TbBi)$_3$(FeAlGa)$\sub$5/O$\sub$12/ (TbBi:YIG) were grown on (GdCa)$_3$(GaMgZr)$\sub$5/O$\sub$12/ (SGGG) by Liquid Phase Epitaxy (LPE). The change of lattice mismatch, Bi concentration, characteristic of magnetic and surface morphology were investigated in the thick film growth as a function of species and amount of chemical element, while substrate rotation speed, supercooling and growth time were kept constant. It was observed that the lattice constant of garnet single crystalline thick films of TbBi:YIG (12.500 ${\AA}$) is closed to the one of the substrate (12.496 ${\AA}$). Besides magnetic field of saturation exhibits excellent results (150 Oe).

Growth and magnetic properties of Tb, Eu, EuTb-substituted garnet single crystal films (Tb, Eu, EuTb가 치환된 가네트 단결정 막의 성장과 자기적 특성)

  • Kim G. Y;Yoon S. G.;Chung I. S;Park S. B;Yoon D. H
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.5
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    • pp.193-198
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    • 2004
  • Using the $PbO-B_2O_3-Bi_2O_3$ flux system, $(TbBi)_3(FeAIGa)_5O_{12}(TbIG)$, $(EuBi)_3(FeAIGa)_5O_{12}(EuIG)$ and $(EuTbBi)_3(FeAIGa)_5O_{12}(EuTbIG)$ films were grown on $(GdCa)_3(GaMgZr)_5O_{12}(SGGG)$ substrates by the liquid phase epitaxy (LPE). The saturation magnetization of the grown TbIG, EuIG and EuTbIG films was about 150, 950 and 125 Oe, respectively. The TbIG films resulted in the single magnetic domain while the EuIG and EuTbIG films were observed to be the multi magnetic domains by magnetic force microscope (MFM).

Growth of YIG Thick Films by the Change of Supercooling and Substrate Rotation Speed (과냉도 및 기판회전조건 변화에 따른 YIG 단결정 후막의 성장)

  • Kim, Yong-Tak;Yoon, Seok-Gyu;Kim, Geun-Young;Im, Young-Min;Jang, Hyun-Duck;Yoon, Dae-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.5
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    • pp.498-502
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    • 2002
  • Pure-yttrium iron garnet($Y_3Fe_5O_{12}$2, YIG) thick films were grown from a $PbO/B_2O_3$ flux onto (111) SGGG substrate using liquid phase epitaxy. The effect of substrate rotation speed and supercooling on crystallinity, chemical composition and growth rate of the thick films was investigated. The FWHM of films decreased with increasing of growth temperature from 860 to 910${\circ}C$. A substrate rotation speed of 120 rpm at 910${\circ}C$ lead to growth rates up to $60{\mu}m/h$.

Dependence of Annealing Temperature on Properties of PZT Thin Film Deposited onto SGGG Substrate

  • Im, In-Ho;Chung, Kwang-Hyun;Kim, Duk-Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.5
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    • pp.253-256
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    • 2014
  • $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films of $1.5{\mu}m$ thickness were grown on $Pt/Ti/Gd_3Ga_5O_{12}$ substrate by RF magnetron sputtering at annealing temperatures ranging from $550^{\circ}C$ to $700^{\circ}C$. We evaluated the residual stress, by using a William-Hall plot, as a function of the annealing temperatures of PZT thin film with a constant thickness. As a result, the residual stresses of PZT thin film of $1.5{\mu}m$ thickness were changed by varying the annealing temperature. Also, we measured the hysteresis characteristic of PZT thin films of $1.5{\mu}m$ thickness to evaluate for application of an optoelectronic device.