• Title/Summary/Keyword: SGDBR laser

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Design and Analysis of U-shaped Sampled Grating Distributed Bragg Reflector Lasers (U형 Sampled Grating DBR 레이저 다이오드의 설계 및 분석)

  • Kim, Kyoungrae;Chung, Youngchul
    • Korean Journal of Optics and Photonics
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    • v.28 no.5
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    • pp.229-235
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    • 2017
  • A widely tunable U-shaped SGDBR (Sampled Grating Distributed Bragg Reflector) laser diode is designed and analyzed by means of a time-domain simulation. The U-shaped SGDBR laser diode consists of SGDBR, active, phase, and TIR (Total Internal Reflection) mirror sections, so the coupling losses across the sections should be carefully considered. The tuning range of the designed U-shaped SGDBR laser is about 1525-1570 nm, which is confirmed by the simulation. The simulation results show that the loss in the TIR mirror region should be less than about 2 dB, and the refractive-index difference at the butt coupling between the passive and active regions should be less than 0.1, to provide the complete tuning range.

Dynamic chracteristics of widely tunable SGDBR/SSGDBR laser diodes integrated with an electroabsorption modulator (전계흡수변조기가 집적된 광대역 파장가변 SGDBR/SSGDBR 레이저 다이오드의 동적특성)

  • 김병성;정영철;김선호
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.8
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    • pp.53-61
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    • 1998
  • Dynamic characteristics of widely tunable SGDBR/SSGDBR laser diodes integrated with an electroabsorption modulator is inestigated using an improved large-signal timef-domain model. First, wide tunning properties of a SGDBR laser diode and a SSGDBR laser diode are analyzed respectively and compared with each other. And, intensity-modulation characteristics of a SGDBR laser diode incorprating an electroabsorption modulator are investigated. It is shown that an external modulation has the lower frequency chirp by 1/20 for almost same extinction ratios than a direct modulation, and a nearly transform-limited pulse train can be generated using the optical gating of an electroabsorption modulator.

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Fabrication of Butt-Coupled SGDBR Laser Integrated with Semiconductor Optical Amplifier Having a Lateral Tapered Waveguide

  • Oh, Su-Hwan;Ko, Hyun-Sung;Kim, Ki-Soo;Lee, Ji-Myon;Lee, Chul-Wook;Kwon, Oh-Kee;Park, Sahng-Gii;Park, Moon-Ho
    • ETRI Journal
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    • v.27 no.5
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    • pp.551-556
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    • 2005
  • We have demonstrated a high-power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of $TiO_2\;and\;SiO_2$ was lower than $3\;{\times}\;10^{-4}\;over$ a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.

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Analysis of Tuning Characteristics of Widely Tunable Sampled Grating Distributed Feedback Laser diode integrated with Sampled Grating Distributed Reflector (추출격자 분포 브래그 반사기가 집적된 광대역 파장가변 추출격자 분포 궤환 레이저 다이오드의 파장가변 특성해석)

  • Kim, Suhyun;Chung, Youngchul
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.10 s.340
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    • pp.19-28
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    • 2005
  • In this paper, we analyzed tuning characteristics of the widely tunable SGDFB laser diode integrated with SGDBR. The improved time-domain model is used to analyse the laser diode. From the numerical analysis, the length of phase control region in the SGDFB section influences on the output power and the tuning range. Also, it was confirmed that the tuning range is affected by the length of the laser diode, the residual reflectivity at the facet, and the position of the facet.

Design and Fabrication of butt-coupled(BT) sampled grating(SG) distributed bragg reflector(DBR) laser diode(LD) using planar buried heterosture(PBH) (저 전류 및 고 효율로 동작하는 양자 우물 매립형 butt-coupled sampled grating distributed bragg reflector laser diode 설계 및 제작)

  • Oh Su Hwan;Lee Chul-Wook;Kim Ki Soo;Ko Hyunsung;Park Sahnggi;Park Moon-Ho;Lee Ji-Myon
    • Korean Journal of Optics and Photonics
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    • v.15 no.5
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    • pp.469-474
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    • 2004
  • We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.