• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.8
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• pp.54-61
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• 1999

This paper proposes a new optic link structure applicable to broad-band wireless access microcellularsystem servicing in the millimeter wave frequency band. The proposed structure utilizes photonic mixing by exploiting the nonlinear property of EOMs, which leads to the frequency up-conversion at the CS and thus, electrical mixing at a BS is not required. Moreover, via transmitting an additional optical millimeter wave carrier into the Bs, the dispenses with an active optic source, which miniaturizes the BS. We analyze CNR, IM3/C in the downlink and SFDR in the uplink. Through simulation using the typical parameter values we also show the feasibility of the proposed system based on the requirements in the current microcellular system.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.1
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• pp.129-140
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• 2017

In this paper, a $4{\times}32$-channel neural recording system capable of acquiring neural signals is introduced. Four 32-channel neural recording ICs, complex programmable logic devices (CPLDs), a micro controller unit (MCU) with USB interface, and a PC are used. Each neural recording IC, implemented in $0.18{\mu}m$ CMOS technology, includes 32 channels of analog front-ends (AFEs), a 32-to-1 analog multiplexer, and an analog-to-digital converter (ADC). The mid-band gain of the AFE is adjustable in four steps, and have a tunable bandwidth. The AFE has a mid-band gain of 54.5 dB to 65.7 dB and a bandwidth of 35.3 Hz to 5.8 kHz. The high-pass cutoff frequency of the AFE varies from 18.6 Hz to 154.7 Hz. The input-referred noise (IRN) of the AFE is $10.2{\mu}V_{rms}$. A high-resolution, low-power ADC with a high conversion speed achieves a signal-to-noise and distortion ratio (SNDR) of 50.63 dB and a spurious-free dynamic range (SFDR) of 63.88 dB, at a sampling-rate of 2.5 MS/s. The effectiveness of our neural recording system is validated in in-vivo recording of the primary somatosensory cortex of a rat.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.47-54
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• 2006

This work proposes a dual-channel 6b 1GS/s ADC for ultra wide-band communication system applications. The proposed ADC based on a 6b interpolated flash architecture employs wide-band open-loop track-and-hold amplifiers, comparators with a wide-range differential difference pre-amplifier, latches with reduced kickback noise, on-chip CMOS references, and digital bubble-code correction circuits to optimize power, chip area, and accuracy at 1GS/s. The ADC implemented in a 0.18um 1P6M CMOS technology shows a signal-to-noise-and-distortion ratio of 30dB and a spurious-free dynamic range of 39dB at 1GS/s. The measured differential and integral non-linearities of the prototype ADC are within 1.0LSB and 1.3LSB, respectively. The dual-channel ADC has an active area of $4.0mm^2$ and consumes 594mW at 1GS/s and 1.8V.