• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.125-133
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• 1999

Fluorine-doped $SnO_2$ thin films were deposited on soda-lime glass substrates by reactive DC magnetron sputtering method. Crystallinity as well as electrical and optical properties of $SnO_2$ : F thin film were investigated as the variations of deposition conditions such as substrate temperature, DC Power, $O_2$ gas pressure, $SF_6$ gas pressure. $SnO_2$ : F thin film deposited with 5% $SF_6$ gas pressure showed electrical resistivities of $2.5\times10^{-3}$cm with the average optical transparency (about 80%) These electrical and optical properties were found to be related to the crystallinity of $SnO_2$ : F thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.430.2-430.2
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• 2016

The front transparent conductive oxide (TCO) films in thin fill solar cell should exhibit high transparency, conductivity, good surface morphology and excellent light scattering properties. The light trapping phenomenon is limited due to random surface structure of TCO films. The proper control of surface structure and uniform cauliflower TCO films may be appropriate for efficient light trapping. We report light trapping scheme of ICP-RIE glass texturing by SF6/Ar plasma for high roughness and haze ratio of ITO films. It was observed that the variation of etching time, pattern size and Ar flow ratio during ICP-RIE process were important factors to improve the diffused transmittance and haze ratio of textured glass. The ICP-RIE textured glass showed low etching rates due to the presence of metal elements like Al, B, F and Na. The ITO films deposited on textured glass substrates showed the high RMS roughness and haze ratio in the visible wavelength region. The change in surface morphology showed negligible influence on electrical and structural properties of ITO films. The ITO films with high roughness and haze ratio can be used to improve the performance of thin film solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.299-304
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• 2004

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of 100$0^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using SF$_{6}$/O$_2$ and CF$_4$/O$_2$ gas mixture. Etch rate has been investigated as a function of oxygen concentration in the gas mixture, rf power, working pressure and gas flow rate. Etch rate was measured by surface profiler and FE-SEM. SF$_{6}$/O$_2$ gas mixture showed higher etch rate than CF$_4$/O$_2$ gas mixture. Maximum etch rate appeared at RF Power of 450W. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40％, and the superior anisotropic cross section was observe

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.868-871
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• 2003

In recent years, silicon carbide has emerged as an important material for MEMS application. In order to fabricate an SiC film based MEMS structure by using chemical etching method, high operating temperature is required due to high chemical stability. Therefore, dry etching using plasma is the best solution. SiC film was deposited by thermal CVD at the temperature of $1000^{\circ}C$ and pressure of 10 torr. SiC was dry etched with a reactive ion etching (RIE) system, using $SF_6/O_2$ and $CF_4/O_2$ gas mixture. Etch rate have been investigated as a function of oxygen concentration in the gas mixture, RF power, and working pressure. Etch rate was measured by surface profiler and FE-SEM. $SF_6/O_2$ gas mixture has been shown high etch rate than $CF_4/O_2$ gas mixture. Maximum etch rate appeared at 450W of RF power. $O_2$ dilute mixtures resulted in an increasing of etch rate up to 40%, and the superior anisotropic cross section was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.413-417
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• 1997

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization. The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM (Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$\sub$6/ plasma treatment subsequent to the etch process prevents the corrosion effectively in the pressure of 300 mTorr. It is found that the chlorine atoms on the etched surface are not substituted for fluorine atoms during SF$\sub$6/ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$\sub$6/ treated surface and suppresses the corrosion successfully.

• Composites Research
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• v.27 no.5
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• pp.196-200
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• 2014

A novel, simple and totally recyclable method has been developed for the synthesis of nontoxic, biocompatible and biodegradable bio-composite films from soy protein and silk protein. Bio films are defined as flexible films prepared from biological materials such as protein. These materials have potential application in medical and food as a packaging material. Their use depends on various parameters such as mechanical (strength and modulus), thermal, among others. In this study, prepare and characterization of bio films made from Soy Protein Isolate (SPI) (matrix) and Silk Fiber (SF) (reinforcement) through solution casting method by the addition of plasticizer and crosslinking agent. The obtained SPI and SPI/SF composites were subsequently subjected to evaluate their mechanical and thermal properties by using Universal Testing Machine and Thermal Gravimetric Analyzer respectively. The tensile testing showed significant improvements in strength with increasing amount of SF content and the % elongation at break of the composites of the SPI/SF was lower than that of the matrix. Though the interfacial bonding was moderate, the improvement in tensile strength and modulus was attributed to the higher tensile properties of the silk fiber.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.56-59
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• 2011

The characterization of the chemical mechanical polishing (CMP) process for undensified phophosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been used by experimenters to understand the relationship between the input variables and responses of interest in a simple and efficient way, and it typically is beneficial for determining the appropriatesize of experiments with multiple process variables and making statistical inferences for the responses of interest. The equipment controllable parameters used to operate the machine consist of the down force of the wafer carrier, pressure on the back side wafer, table and spindle speeds (SS), slurry flow (SF) rate, pad condition, etc. None of these are independent ofeach other and, thus, the interaction between the parameters also needs to be understoodfor improved process characterization in CMP. In this study, we selected the five controllable equipment parameters the most recommendedby process engineers, viz. the down force (DF), back pressure (BP), table speed (TS), SS, and SF, for the characterization of the CMP process with respect to the material removal rate and film uniformity in percentage terms. The polished material is undensified PSG which is widely used for the plananization of multi-layered metal interconnects. By statistical modeling and the analysis of the metrology data acquired from a series of $2^{5-1}$ fractional factorial designs with two center points, we showed that the DF, BP and TS have the greatest effect on both the removal rate and film uniformity, as expected. It is revealed that the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that process control based on a better understanding of the process is the key to success in current semiconductor manufacturing, in which the size of the wafer is approaching 300 mm and is scheduled to continuously increase up to 450 mm in or slightly after 2012.

• Journal of Popular Narrative
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• v.25 no.1
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• pp.165-191
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• 2019

The purpose of this article is to elucidate why the motif of time travel is repeated in the science fiction narrative by examining the functions of this motif in the SF movie series of Star Trek in its narrative and non-narrative aspects. Star Trek IV: The Voyage Home (1986) aims to attract the audience's interest in the story through the use of plausible time travel in the form of the slingshot effect which causes the spacecraft to fly at very fast speeds around an astronomical object. The movie also touches upon the predestination paradox that arises from a change of history in which it describes a formula of transparent aluminum that did not exist at the time. The film also serves as an evocation of the ideology of ecology by including humpback whales in the central narrative and responding to the real issue of the whale protection movement of the times. Star Track VIII: First Contact (1996) intends to interest the audience in the narrative with the warp drive, a virtual device that enables travel at speeds faster than that of light and a signature visual of Star Trek, at the time of its birth through time travel. The film emphasizes the continuation of peaceful efforts by warning the destruction of humanity that nuclear war can bring. It tackles with the view of pacifism and idealism by stressing the importance of cooperation between countries in the real world by making the audience anticipate the creation of the United Federation of Planets through encounters with the extraterrestrial. Star Trek: The Beginning (2009) improves interest through the idea of time travel to the past, this time using a black hole and the parallel universe created thereby. The parallel universe functions as a reboot, allowing a new story to be created on an alternate timeline while maintaining the original storyline. In addition, this film repeats the themes pacifism and idealism shown in the 1996 film through the confrontation between Spock (and the Starfleet) and Nero, the destruction of the Vulcan and the Romulus, and the cooperation of humans and Vulcans. Eventually, time travel in three Star Trek films has the function of maximizing the audience's interest in the story and allowing it to develop freely as a narrative tool. It also functions as an ideal solution for commenting on current problems in the non-narrative aspect. The significance of this paper is to stress the possibility that the motif of time travel in SF narrative will evolve as it continues to repeat in different forms as mentioned above.

• Korean Architects
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• s.522
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• pp.20-23
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• 2012

대한건축사협회가 주최하는 제4회 서울국제건축영화제($4^{th}$ Seoul International Architecture Film Festival)는 건축과 영화의 만남을 통하여 국민들이 건축을 보다 친근히 느낄 수 있게 하고, 건축사의 역할, 건축의 가치에 대해 논할 수 있는 장을 마련한다. 11월 8일에 개막식이 열릴 예정이며, 김형수 서울국제건축영화제 집행위원장의 개막선언과 함께 막을 열 이번 영화제는 '도시'를 주제로 총 5개국 10편의 영화가 7일간 상영될 예정이다. 개막작은 에쿠메노폴리스로 이스탄불의 도시문제를 다루고 있으며, 상영작 중 '브라질'은 80년대 SF영화로 당시 향수를 불러일으키며 다양한 관객층을 불러 모을 예정이다.

• Bulletin of the Korean Chemical Society
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• v.15 no.12
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• pp.1042-1045
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• 1994

A thin film of silver ferricyanide (Ag$_3$Fe(CN)$_6$) on a platinum or gold substrates can be reduced electrochemically to the salt of silver ferrocyanide in potassium nitrate solution. The color of these films are orange and these films are shown to be electrochromic. The voltammogram is shown the asymmetry of the oxidation compared to the reduction wave under various supporting electrolytes. The standard heterogeneous electron-transfer rate for these films and bare Pt electrode were 0.49 ${\times}$ l0$^{-2}$ and 1.30 ${\times}$ l0$^{-2}$ cm/s, respectively, obtained using a rotating disc electrode. Rough D$_0$ values, evaluated from the Levich equation, for Fe(CN)$_6^{3-/4-}$ at both SF thin film and a bare Pt disc electrode were shown as 1.2l ${\times}$ l0-6 and 0.94 ${\times}$ l0$^{-6}$ cm$^2$/s, respectively. The conductivities, as determined from the slops of the i-V curves for a ca. 1 mm sample for dried SF potassium rich and deficient bulk samples pressed between graphite electrodes, were 9.34 ${\times}$ l0$^{-9}$ and 5.80 ${\times}$ l0$^{-9}$ (${\Omega}$${\cdot}$cm)$^{-1}$, respectively.