• Applied Microscopy
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• 제45권4호
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• pp.214-217
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• 2015

This study introduces metal coating as an effective sample preparation method to remove charge-up caused by the shadow effect during field emission scanning electron microscope (FE-SEM) analysis of dynamic structured samples. During a FE-SEM analysis, charge-up occurs when the primary electrons (input electrons) that scan the specimens are not equal to the output electrons (secondary electrons, backscattered electrons, auger electrons, etc.) generated from the specimens. To remove charge-up, a metal layer of Pt, Au or Pd is applied on the surface of the sample. However, in some cases, charge-up still occurs due to the shadow effect. This study developed a coating method that effectively removes charge-up. By creating a converted sample stage capable of simultaneous tilt and rotation, the shadow effect was successfully removed, and image data without charge-up were obtained.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1862-1865
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• 2005

We have a plan to design a controller for electron beam manufacturing system. At first, we designed a controller for SEM. The controller consists of five parts (power source, beam controller, scanning controller, optic controller and main controller). Beam controller supplies pulse wave for generating high voltage and can monitor the status of high voltage instrument through emission current. Optic controller controls focus, spot size and image shift. Main controller transmits variables from operating program to each part and monitors the status of peripheral device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.298-299
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• 2008

Images of deposited layers of organic light-emitting diodes were observed by scanning-electron microscope (SEM). We were able to see a clear cross-sectional view of deposited layers. The SEM is a type of electron microscope that images the sample surface by scanning it with a high-energy beam of electrons in a raster scan pattern. A thickness of deposited layer measured by thickness monitor is close to a real value measured by a-step surface profiler within 5%. We were able to see a formation of domains of size about 50-100nm from a surface morphology of Al, and pin holes of size about 50nm.

• 한국지반신소재학회논문집
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• 제7권2호
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• pp.1-5
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• 2008

일반적인 콘크리트 건축물이나 도로포장에서 발생되는 부등침하는 건물의 붕괴나 도로의 수명저하로 인한 비용을 증가시킨다. 이에 대하여 침하된 구조물 하부지반에 그라우팅 공법을 이용하여 지반침하복원을 실시한다. 그러나 기존 그라우트 공법의 경우, 강도발현기간이 길고, 보강효과가 지속적이지 못한 단점을 지니고 있다. 이를 보완하기 위한 주입재료로써, 고밀도 팽창 재료의 특성을 평가하였다. 지반상태와 팽창재료의 주입량의 변화에 따른 압축강도의 변화와 화학물질에 대한 안정성 시험 및 SEM 촬영을 통하여 특성을 연구하였다. 압축강도는 다른 물질과의 혼합으로 높은 강도가 발현되었으며, 화학적 저항성은 대부분의 조건에서 반응하지 않았으나 알코올계열에 변화가 발생하였다. SEM 촬영을 통하여 강도발현에 있어서 조직구성이 촘촘할수록 치밀하게 구성된다고 판단하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2003년도 춘계학술대회 논문집
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• pp.191-195
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• 2003

The formation degree of sustain (ITO pattern) decides quality of PDP (plasma display panel). For this reason. it makes efforts in search defects more than 30 ${\mu}{\textrm}{m}$. Now, the existing inspection process is dependent upon naked eye or SEM equipment in off-line PDP manufacturing process. In this study developed prototype inspection system of PDP ITO glass. This system creates information that detects and sorts kind of defect automatically. Design ed inspection technology adopts line-scan method by slip-beam formation for the minimum of inspection time and image processing algorithm is embodied in detection ability of developed system. Designed algorithm had to make good use of kernel matrix which draws up an approach to geometry. A characteristic of area-shaped defects, as pin hole, substance, protrusion et al, are extracted from blob analysis method. Defects, as open, short, spots, et al, are distinguished by line type inspection algorithm. In experiment results, we could have ensured ability of inspection that can be detected with reliability of up to 95% in about 60 seconds

• 열처리공학회지
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• 제31권5호
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• 한국응용과학기술학회지
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• 제27권3호
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• pp.361-369
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• 2010

A study on the corrosion inhibition of metals is important in many industrial applications (carbon steel, copper, aluminum, SUS 304, nickel). In this study, we investigated the C-V diagrams related to the surface corrosion of metals. It was observed through the SEM that the surface corrosion state of the various metals had the corrosion potential by the scan rate and the organic inhibitor containing an amine group. We determined to measure cyclic voltammetry using the three-electrode system. The measurement of oxidation and reduction ranged from -1350mV to 1650mV. The scan rate was 50, 100, 150, and 200mV/s. It turned out that the C-V characterization of SUS 304 was irreversible process caused by the oxidation current from the cyclic voltammogram. After adding organic inhibitors, the adsorption film was constituted, and the passive phenomena happened. As a result, it was revealed that the inhibition effect of metal corrosion depends on the molecular interaction, and the interaction has influence on the adsorption complex.

• 한국응용과학기술학회지
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• 제29권1호
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• pp.88-94
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• 2012

순환전압전류법을 사용하여 전류-전압 곡선을 측정하였다. 전기화학적 특성과 금속의 표면상태간의 관계는 전자현미경(SEM)을 사용하여 조사하였다. 그리고 순환전압전류법에 의한 전기화학적 측정은 3 전극 시스템을 사용하였다. 측정 범위는 초기 포텐셜에서 -1350 mV까지 환원시키고, 연속적으로 1650 mV까지 산화시키고, 다시 초기지점으로 환원시켜 측정하였다. 스캔속도는 50, 100, 150, 200 및 250 mV/s를 선정하였다. 그 결과, 부식억제로 모노에탄올아민(MEA)을 사용하여 금속의 C-V 특성은 순환전압전류법으로부터 산화 전류에 기인한 비가역 공정으로 나타났다. 부식억제제로 MEA을 사용하였을 경우에는 전해질의 농도가 증가할수록 확산계수가 감소하는 경향을 나타내었다. 그리고 구리의 SEM 이미지를 보면, 전해질 농도를 증가시키면 표면부식은 증가하였다. 부식억제제로 $1.0{\times}10^{-3}M$ MEA를 첨가시키면, 전해질 농도 0.1 N의 경우 확산계수가 상대적으로 커서 부식억제 효과가 적었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.246-246
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• 1999

TFT-LCD 제조공정의 발전에 따라, 박막층(a-Si, SiNx, gate 전극, ITO 등)에 대한 습식공정을 대치하는 건식식각이 선호되고 있다. scan signal의 전파지연시간을 단축시키는 장점을 갖는 Al gate 전극의 건식식각의 경우, 높은 식각속도와 slope angle의 조절, 그리고 식각균일도가 요구된다. 이러한 Al gate 전극물질로는 Al에 Ti이나 Nd와 같은 금속을 첨가하여 post annealing 동안에 발생하는 hillock을 방지하고 더불어 낮은 resistivity(<10$\mu$$\Omega$cm)와 열과 부식에 대한 높은 저항성을 얻을 수 있다. 그러나 Al-Nd alloy 박막은 식각속도와 photoresist에 대한 식각선택도가 낮아 문제로 지적되고 있다. 본 실험에서는 고밀도 플라즈마원의 일종인 자화된 고밀도 유도결합형 플라즈마를 이용하여 식각가스 조합, inductive power, bias voltage 그리고 공정압력 등의 다양한 공정변수에 따른 Al-Nd film의 기본적인 식각특성 변화를 관찰하였다. 식각시 chloring gas를 주요 식각가스로 사용하고 BCl, HBr 등을 10mTorr의 일정한 압력을 유지하는 조건하에서 첨가하였으며 inductive power는 5100W~800W, bias voltage는 -50V~-200V까지 변화를 주었다. 식각공정의 전후를 통하여 Al-Nd 박막표면의 조성변화를 관찰하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하였으며 공정변수에 따른 식각후 profile 관찰은 scanning electron microscopy(SEM)을 통하여 관찰하였다. Al-Nd 식각속도는 100% Cl2 플라즈마에 비해 BCl3의 양이 증가할수록 증가하였으며 75%의 BCl3 gas를 첨가하였을 때 가장 높은 식각속도를 얻을 수 있었다. 또한 SEM을 이용한 표면분석으로 roughness가 감소된 공정조건을 찾을 수 있었다.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.969-975
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• 2000

Laser direct writing of micro-patterned copper lines has been achieved by pyrolytic decomposition of copper formate films (Cu(HCOO)$_2$.4$H_2O$), as a metallo-organic precursor, using a focused CW Ar$^{+}$ laser beam (λ=514nm) on PCB boards and glass substrates. The linewidth and thickness of the lines wee investigated as a functin of laser power and scan speed. The profiles of the lines were measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force measured by scanning electron microscope (SEM), surface profiler ($\alpha$-step) and atomic force microscopy (AFM). The electrical resistivities of the patterned lines were also investigated as a function of laser parameters using probe station and semiconductor analyzer. We compared resistivities of the patterned copper lines with these of the Cu bulk. Resistivities decreased due to changes in morphology and porosity of the deposit, which were about 3.8 $\mu$$\Omega$cm and 12$\mu$$\Omega$cm on PCB and glass substrates after annealing at 30$0^{\circ}C$ for 5 minutes.s.