• 한국분말재료학회지
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• 제28권1호
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• pp.44-50
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• 2021

Zinc selenide (ZnSe) nanoparticles were synthesized in aqueous solution using glutathione (GSH) as a ligand. The influence of the ligand content, reaction temperature, and hydroxyl ion concentration (pH) on the fabrication of the ZnSe particles was investigated. The optical properties of the synthesized ZnSe particles were characterized using various analytical techniques. The nanoparticles absorbed UV-vis light in the range of 350-400 nm, which is shorter than the absorption wavelength of bulk ZnSe particles (460 nm). The lowest ligand concentration for achieving good light absorption and emission properties was 0.6 mmol. The reaction temperature had an impact on the emission properties; photoluminescence spectroscopic analysis showed that the photo-discharge characteristics were greatly enhanced at high temperatures. These discharge characteristics were also affected by the hydroxyl ion concentration in solution; at pH 13, sound emission characteristics were observed, even at a low temperature of 25℃. The manufactured nanoparticles showed excellent light absorption and emission properties, suggesting the possibility of fabricating ZnSe QDs in aqueous solutions at low temperatures.

• 한국광물학회지
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• 제23권2호
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• pp.117-124
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• 2010

합성된 슈베르트마나이트를 대상으로 $AsO_4,\;SeO_3,\;CrO_4$ 세 종류의 산화음이온에 대한 흡착실험 및 흡착된 시료에 대하여 열분석을 실시하였다. 흡착 실험 결과 대체로 두 종류의 흡착 특성을 보이며 $AsO_4$와 $SeO_3$의 경우 약 1 mM의 농도까지 대부분의 용액 내 이온들이 100% 흡착된 것으로 나타났으나 그 이상의 농도에서는 흡착이 더 이상 뚜렷하게 증가되지 않는 것을 보여준다. 이는 기존의 $AsO_4$의 흡착 연구 결과에서처럼 $AsO_4$가 슈베르트마나이트 구조 내의 $SO_4$를 치환하기 때문으로 생각되며 $SeO_3$ 역시 $SO_4$를 1 : 1로 치환하기 때문으로 해석된다. 그러나 $CrO_4$의 경우 전 농도 구간에서 다른 산화음이온에 비하여 흡착이 훨씬 적게 일어났다. 열분석은 0.1 mM과 1.25 mM 농도에서 흡착된 시료에 대하여 각각 실시되었다. $AsO_4$로 흡착된 시료의 경우 $AsO_4$가 $SO_4$를 치환하고 있기 때문에 순수한 슈베르트마나이트에서 특징적으로 나타나는 약 $600^{\circ}C$에서의 질량 감소가 훨씬 적으며 약 $1,000^{\circ}C$ 이상에서 $AsO_4$의 분해에 의하여 추가적인 질량감소를 보인다. $SeO_3$로 흡착된 시료의 경우 $SO_4$에 비하여 약간 낮은 온도에서 질량감소가 일어나 좀 더 넓은 온도범위에서 질량감소를 보였다. 이 역시 $SeO_3$의 분해가 $SO_4$ 보다 약간 낮은 온도에서 일어나기 때문으로 사료된다. 그러나 $CrO_4$로 흡착된 시료는 $SO_4$에 의한 질량감소가 역시 적게 나타나나 $CrO_4$가 다른 산화음이온과 같이 고온에서 분해되지 않아 추가적인 질량감소를 보이지 않으며 이를 통하여 $CrO_4$ 역시 $SO_4$를 치환하고 있는 것으로 판단된다. 흡착실험 결과와 종합하여 볼 때 $CrO_4$ 역시 $SO_4$를 치환하며 흡착을 하나 다른 두 산화음이온에 비하여 $SO_4$와의 친화도, 광물 구조 내의 불안정성 등의 원인에 의하여 완전한 1 : 1 치환이 일어나지 않는 것으로 판단된다.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2185-2189
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• 2010

Closely arranged CdSe and Zn doped CdSe vertical nanorod bundles were grown directly on FTO coated glass by using electrodeposition method. Structural analysis by XRD showed the hexagonal phase without any precipitates related to Zn. FE-SEM image showed end capped vertically aligned nanorods arranged closely. From the UV-vis transmittance spectra, band gap energy was found to vary between 1.94 and 1.98 eV due to the incorporation of Zn. Solar cell parameters were obtained by assembling photoelectrochemical cells using CdSe and CdSe:Zn photoanodes, Pt cathode and polysulfide (1M $Na_2S$ + 1M S + 1M NaOH) electrolyte. The efficiency was found to increase from 0.16 to 0.22 upon Zn doping. Electrochemical impedance spectra (EIS) indicate that the charge-transfer resistance on the FTO/CdSe/polysulfide interface was greater than on FTO/CdSe:Zn/polysulfide. Cyclic voltammetry results also indicate that the FTO/CdSe:Zn/polysulfide showed higher activity towards polysulfide redox reaction than that of FTO/CdSe/polysulfide.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.232-239
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• 2013

Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

• Asian-Australasian Journal of Animal Sciences
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• 제28권8호
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• pp.1133-1139
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• 2015

This study aimed to determine the effects of parenteral selenium (Se) and vitamin E supplementation on economic impact, milk yield, and some reproductive parameters in high-yield dairy cows in the dry period and in those at the beginning of lactation. At the beginning of the dry period, cows (n = 323) were randomly divided into three groups as follows: Treatment 1 (T1), Treatment 2 (T2), and Control (C). Cows in group T1 received this preparation 21 days before calving and on calving day, and cows in group T2 received it only on calving day. The cows in the control group did not receive this preparation. Supplementation with Se increased Se serum levels of cows treated at calving day (p<0.05). Differences in milk yield at all weeks and the electrical conductivity values at the 8th and 12th weeks were significant (p<0.05). Supplementation with Se and Vitamin E decreased the incidence of metritis, the number of services per conception and the service period, but had no effects on the incidence of retained fetal membrane. A partial budgeting analysis indicated that Se supplementation was economically profitable; cows in group T1 averaged 240.6$ per cow, those in group T2 averaged 224.6$ per cow. Supplementation with Se and Vitamin E has been found to increase serum Se levels, milk yield, and has positive effects on udder health by decreasing milk conductivity values and incidence of sub-clinical mastitis.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• 전자공학회논문지A
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• 제31A권12호
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• pp.71-79
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• 1994

In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4332-4336
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• 2011

The chalcopyrite-type $CuInSe_2$ is a remarkable material for thin film solar cells owing to its electronic structure and optical response. Single-phase sphere-like $CuInSe_2$ nanocrystallite particles were prepared by a facile noninjection method with triethanolamine as the complexing agent and the solvent simultaneously. The period of the reaction was the key to form single-phase $CuInSe_2$ nanocrystals at $240^{\circ}C$. TEM, XRD, XPS, EDX investigations were performed to characterize the morphology and the detailed structure of as-synthesized $CuInSe_2$ nanocrystals. All of the analysis results proved that the synthesized nanocrystals were pure phase and close to the stoichiometric ratio rather than a simple mixture. The band gap of the obtained $CuInSe_2$ nanocrystals was $1.03{\pm}0.03$ eV.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.270-273
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• 2007

In this report, Indium-free and Indium-reduced thin film materials for solar absorber were studied in order to search alternative materials for thin film solar cell. The films of $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ were deposited using mixed binary chalcogenides powders. From the film bulk analysis result, it is observed that Cu concentration is a function of substrate temperature as well as CuSe mole ratio in the target. Under optimized conditions, $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ thin films grow with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^4$ $cm^{-1}$. $Cu_2ZnSnSe_4$ film shows a 1.5 eV band gap. On the other side, an increasing of optical band gap from 1.0 eV to 1.25 eV ($CuInSnSe_2$) is found to be proportional with an increasing of Zn concentration. All films have a p-type semiconductor characteristic with a carrier concentration in the order of $10^{14}$ $cm^{-3}$, a mobility about $10^1$ $cm^{2{\cdot}-1.}S^{-1}$ and a resistivity at the range of $10^2-10^6$ ${\Omega}{\cdot}m$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1587-1589
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• 2002

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.