• 전산구조공학
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• 제28권2호
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• pp.26-35
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• 2015

• 한국기계연구소 소보
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• 통권20호
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• pp.115-118
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• 1990

Hook of Dobby is a important part of shedding device, which must be endured the repeated loading force. In this paper, experiment on various mechanical characteristics; measurement of loading force were carried out, and compared the experimental values with results of Finite Element Method.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 추계학술발표회
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• pp.765-766
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• 2005

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2019년도 춘계학술논문요약집
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• pp.211-212
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• 2019

• 전기학회논문지
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• 제58권10호
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• pp.2071-2078
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• 2009

In this paper, we proposed a non-contact respiration measurement system with ultrasonic proximity sensor. Ultrasonic proximity sensor approach of respiration measurement which respiration signatures and rates can be derived in real-time for long-term monitoring is presented. 240 kHz ultrasonic sensor has been applied for the proposed measurement system. The time of flight of sound wave between the transmitted signal and received signal have been used for a respiration measurement from abdominal area. Respiration rates measured with the ultrasonic proximity sensor were compared with those measured with standard techniques on 5 human subjects. Accurate measurement of respiration rate is shown from the 50 cm measurement distance. The data from the method comparison study is used to confirm the performance of the proposed measurement system. The current version of respiratory rate detection system using ultrasonic can successfully measure respiration rate. The proposed measurement method could be used for monitoring unconscious persons from a relatively close range, avoiding the need to apply electrodes or other sensors in the correct position and to wire the subject to the monitor. Monitoring respiration using ultrasonic sensor offers a promising possibility of non-contact measurement of respiration rates. Especially, this technology offers a potentially inexpensive implementation that could extend applications to consumer home-healthcare and mobile-healthcare products. Further advances in the sensor design, system design and signal processing can increase the range of the measurement and quality of the rate-finding for broadening the potential application areas of this technology.

• 한국전기전자재료학회논문지
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• 제14권6호
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• 한국추진공학회지
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• 제14권3호
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• pp.69-78
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• 2010

한국항공우주연구원은 2000년부터 극초음속 공기흡입식 추진기관 시험설비의 설계와 개발에 착수하여 2009년 7월 시험설비의 구축을 완료하였다. 스크램제트 엔진 시험설비(SeTF)로 명명된 본 시험설비는 자유제트 형식 시험부를 갖춘 불어내기식, 고 엔탈피 풍동으로 고압공기 공급원, 고온 공기 공급시스템, 엔진 시험부, 연료 공급시스템, 설비 제어 및 데이터 처리 시스템 그리고 배기 시스템으로 구성되어 있다. 본 논문에는 SeTF의 설계, 사양을 소개하였으며 현재 수행 중인 SeTF의 특성 파악 시험에 대한 소개 및 일부 시험 결과를 정리하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.