• Journal of Radiation Protection and Research
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• v.30 no.1
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• pp.35-37
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• 2005

The radiation detector research group at KAERI has developed a high efficiency neutron detector using a Gas Electron Multiplier (GEM). The double GEM was fabricated and operated in an Ar/Isobutane mixture. For an application to a high efficiency neutron detector, $^6Li\;or\;^{10}B$ neutron converters coated on each surface of the multi GEM foils were considered. The optimized thickness of the thin film for a neutron detection was calculated with the MCNP and SRIM. The neutron efficiency was calculated by changing the chemical components of the thin film, and the thickness of the thin film. The thermalized neutrons were measured by a GEM detector with a thin neutron converter on the drift plate.

• Korean Journal of Digital Imaging in Medicine
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• v.8 no.1
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• pp.51-55
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• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.44 no.5
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• pp.30-37
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• 2007

Hardware for monitoring the water quality is developed using water fleas. Water flea is a frequently used biological sensor for monitoring the water quality. Water fleas quickly respond to the incoming toxic water by changing their activity when they are exposed. By measuring the activity of water fleas, the incoming toxic water is instantly detected in real time. So far the measurement of activity of water fleas has been done with a system equipped with a light source of LED and a light detector of photo transistor. Water flea itself is, however, sensitive to light resulting in incorrect response and the system has two inconvenient separate parts of the light source and the detector. This paper suggests a system using a CCD camera instead of a light source and a detector. The suggested system processes the image data from the CCD camera in real time without any delay. The developed system becomes a part of the remote water monitoring embedded system.

• Journal of the Korea Society for Simulation
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• v.28 no.2
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• pp.89-95
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• 2019

This paper introduces the simulation concepts and technical approach of underwater weapon system performance analysis simulator, especially focused on probabilistic target detection concepts. We calculated the signal excess (SE) value using SONAR equation, then derived the probability density function(PDF) for target presence($H_1$) or absence($H_0$) cases, respectively. With the Neyman-Pearson detector criterion, we got the probability of detection($P_D$) while satisfying the given probability of false alarm($P_{FA}$). At every instance of simulation, target detection is decided in the probabilistic perspective. With the proposed detection implementation, we improved the model fidelity so that it could support the tactical decision during the operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.79-82
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• 2003

a-Se film is known as promising medical X-ray detector material but a-Se as dopanted Tellurium is not available in X-ray detectors. a-Se thick film was grown by vacuum thermal evaporator to $3{\mu}m$ thickness. The characteristics of thick films were analyzed by XRD, U-V Meter, and SEM measurements. Te composition is 0.1, 0.3, 0.5, 0.7g. This paper is fundmental data for phosphor layer's essential parameter that selenium have absorption wavelength along to various Te concentration rate.

• Journal of Biomedical Engineering Research
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• v.28 no.2
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• pp.306-309
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• 2007

PXLM(Phosphor based x-ray light modulator) has a combined structure by phosphor, photoconductor, and liquid crystal and it can realize x-ray image of high resolution in clinical diagnosis area. In this study, we fabricated a photoconductor and investigated electrical and optical properties to confirm application possibility of radiator detector of PXLM structure. As photoconductor, amorphous selenium(a-Se), which is used most in DR(Digital radiography) of direct conversion method, was used and for formation of thin film, it was formed as $20{\mu}m-thick$ by using thermal vacuum evaporation system. For a produced a-Se film, through XRD(X-ray diffraction) and SEM(Scanning electron microscope), we investigated that amorphous structure was uniformly established and through optical measurement, for visible light of 40 $0\sim630nm$, it had absorption efficiency of 95 % and more. After fabricated a-Se film on the top of ITP substrate, hybrid structure was manufactured through forming $Gd_2O_3:Eu$ phosphor of $270{\mu}m-thick$ on the bottom of the substrate. As the result to confirm electrical property of the manufactured hybrid structure, in the case of appling $10V/{\mu}m$, leakage current of $2.5nA/cm^2$ and x-ray sensitivity of $7.31nC/cm^2/mR$ were investigated. Finally, we manufactured PXLM structure combined with hybrid structure and liquid crystal cell of TN(Twisted nematic) mode and then, investigated T-V(Transmission vs. voltage) curve of external light source for induced x-ray energy. PXLM structure showed a similar optical response with T-V curve that common TN mode liquid crystal cell showed according to electric field increase and in appling $50\sim100V$, it showed linear transmission efficiency of $12\sim18%$. This result suggested an application possibility of PXLM structure as radiation detector.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.12
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• pp.189-194
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• 2014

In this study, from a new x-ray detector that combines a columnar CsI:Na scintillation layer with a photosensitive mercuric iodide layer was investigated. In this structure, X-rays are converted into visible light on a thick CsI:Na layer, which is then converted to electric charges in a thin $HgI_2$ bottom layer. The thin coplanar mercuric iodide films as a photosensitive converter requiring only a few tens of volts of bias, associated with a thick columnar coating of phosphor layer, were simulated and designed. The results of this research suggest that the new coplanar x-ray detector with a hybrid-type structure can resolve the following problems: high voltage from the a-Se, and low conversion efficiency from the indirect conversion method. The results of this research suggest that the new CsI:Na/$HgI_2$ x-ray detector with a double-layer type structure can resolve the following problems: high voltage from the direct conversion method, and low conversion efficiency from the indirect conversion method.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.15-18
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• 2017

In this study, we have studied the characteristics of the organic photodiode varying due to the blending conditions of the quantum dots (QDs). The active layer of the photodiode was formed with poly (3-hexylthiophene) and phenyl-C61-butyric acid methyl ester, and CdSe QDs with and without ZnS shell were blended in the active layer. The photodiode with CdSe/ZnS QDs showed the highest power conversion efficiency (PCE) and short-circuit current (Jsc). The performance change of the organic photodiode by X-ray irradiation was also measured. Regardless of X-ray irradiation conditions, the photodiode with CdSe/ZnS QDs showed better stability than other cases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.72-72
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• 2009

본 연구에서는 Photoconductor materials 기반의 평판형 X-ray Detector film 제작에 관한 연구를 수행하였다. 기존의 광도전성 물질로 사용되어 오던 비정질 셀레늄(Amorphous seleinum; a-Se) 기반의 디지털 방사선 검출기 보다 높은 신호 및 동작 특성을 가지는 Mercury Iodide(HgI2)와 열적, 전기적 특성이 안정적이며, 소자의 동작특성이 우수한 Lead Oxide(PbO) 기반의 X-ray Detector film의 개발에 있어서 각각 HgI2 및 PbO 두 물질 층을 적정비율에 맞추어 제작함으로써 최적의 X-ray Detector를 구현하고자 하였다. 이는 빠른 영상획득을 통해 기존의 방식이 가지는 문제점을 해결하고 의료기기 디지털화를 구현할 수 있는 차세대 시스템을 개발하고자 하는 것이다. 본 연구에서는 기존의 진공증착법의 두꺼운 대면적 필름의 제조가 어려운 문제점을 해결하고자 Particle In Binder method(PIB) 방법을 이용하여 $3"{\times}3"$사이즈의 두께 $200{\mu}m$의 다결정의 Photoconductor 필름을 제조하여 전기적 특성을 평가하였다. 제작된 필름의 전기적 특성을 dark current, X-선 sensitivity와 SNR(Signal to -Noise Rate) 등을 측정하여 정량적으로 평가 하였다. 기준 실험으로 진행한 DG 2.1 바인더를 사용한 single-HgI2 층에서 보다 높은 sensitivity 값을 보였지만 높은 dark current로 인해 SNR이 떨어지는 결과를 볼 수 있었다. 본 연구에서 제시하는 두 Photoconductor material의 Soaking method를 이용한 실험에서는 single-HgI2에 해당하는 높은 sensitivity 및 저감된 dark current로 인해 높은 SNR 값을 획득하였다. 하지만 습도와 같은 주변 환경에 의한 재현성 문제로 인한 신호값의 불안정성에 대한 문제점도 남아 있으므로, 차후 최적화된 material 제작 공정을 위한 연구가 꾸준히 진행 되어져야 할 것이다.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.295-296
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• 1998

With xeroradiography appearance, DR (Digital Radiography) system have been studying for X-ray detection using photoreceptor. Also detection method for receptor charge change have been developing variably. We use photoreceptor material of a-Se(Amorphous Selenium) with high DQE, high SNR(Signal to Noise Ratio) and high transformation efficiency of X-ray signals into electrical signals. After a-Se receptor is uniformly charged by using Arc discharge, X-ray is exposed. Then a-Se receptor produce subtle charge variation and MOSFET detect charge variations. The detected signal pass A/D converter and signal processing by PC. As results, the initial voltage is 8V. It has wide dynamic range needed digital radiography system. In this study, we obtained data with changing kVp(tube potential voltage) and fixed 8mAs(tube current by exposure time) in X-ray system. However MOSFET detector for X-ray signal is not tested X-ray mAs variations. But if MOSFET detector is tested X-ray mAs variation and exactly calibrated multichannel is made and noise-reduction is done, suitable DR system readout method will be done.