• Proceedings of the Korean Nuclear Society Conference
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• 2004.10a
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• pp.1087-1088
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.205-205
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• 2003

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2004.11a
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• pp.280-280
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• 2004

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.554-562
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• 2012

Processing of Scanning electron microscope imaging has been analyzed in both secondary electron (SE) imaging and backscattered electron (BSE) image. Because of unique characteristics of both secondary electron and backscattered electron image, mechanism of imaging process and image quality are quite different each other. For the sake of characterize imaging process, Monte Carlo simulation code have been developed. It simulates electron penetration and depth profile in certain material. In addition, secondary electron and backscattered electron generation process as well as their spatial distribution and energy characteristics can be simulated. Geometries that has fundamental feature have been imaged using the developed Monte Carlo code. Two, SE and BSE images generation process will be discussed. BSE imaging process can be readily used to discriminate in both material and geometry by simply changing position and direction of BSE detector. The developed MC code could be useful to design BSE detector and their position. Furthermore, surface reconstruction technique is possibly developed at the further research efforts. Basics of Monte Carlo simulation method will be discussed as well as characteristics of SE and BSE images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.71-74
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• 2003

Photoconductor for direct detection fiat-panel imager present a great materials challenge, since their requirement include high X-ray absorption, ionization and charge collection, low leakage current and large area deposition, CdTe is practical material. We report studies of detector sensitivity, That is an CdTe with $5{\mu}m$ thickness on glass. That is hybrid layer of depositting ZnS:AgCl phosphor with $100{\mu}m$ on CdTe. The leakage current of hybrid is similar to it of a-Se, but photocurrent is larger than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.305-306
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• 2005

The effects of As addition In amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As X-ray device. The fabricated a-Se (0.3%As) based X-ray detector exhibited the highest X-ray sensitivity of 5 samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.440-443
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• 2002

Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

• Journal of the Korean Society of Radiology
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• v.11 no.4
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• pp.183-188
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• 2017

In recent years, the automatic remote control controller of the gamma ray irradiator malfunctions, and radiation workers are continuously exposed to radiation exposure accidents. In the non-destructive testing field, much time and resources are invested in establishing a radioactive source monitoring system in order to prevent potential incidents of radiation. In this study, the gamma-ray response properties of the lead monoxide-based radiation detector were estimated through monte carlo simulation as a previous study for the development of a radioactive source location monitoring system that can be applied universally to various non-destructive testing equipment. As a result of the study, the optimized thickness of the radiation detector varies according to the gamma-ray energy emitted from the radioactive source, and the optimized thickness gradually increases with increasing energy. In conclusion, the optimized thickness of the lead monoxide-based radiation detector was $200{\mu}m$ for the Ir-192, $150{\mu}m$ for the Se-75 and $300{\mu}m$ for the Co-60. Based on these results, the appropriate thickness of lead monoxide-based radiation detector considering secondary-electron equilibrium was evaluated to be $300{\mu}m$ for general application. These results can be used as a basic data for determining the appropriate thickness required in the radiation detector when developing a radiation source location monitoring system for universal application to various non-destructive testing equipment in the future.

• Journal of Radiation Protection and Research
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• v.35 no.2
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• pp.81-84
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• 2010

A CSA(Charge Sensitive Amplifier) was designed and fabricated for application in a radiation detection system based on a semiconductor detector such as Si, SiC, CdZnTe and etc.. A fabricated hybrid.type CSA was evaluated by comparison with a commercially available CSA. A comparison was performed by using calculation of ENC (Equivalent Noise Charge) and by using energy resolutions of fabricated radiation detectors based on Si. In energy resolution comparison, a fabricated CSA showed almost the same performance compared with a commercial one. In this study, feasibility of a fabricated CSA was discussed.

• Journal of Sensor Science and Technology
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• v.6 no.3
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• pp.228-236
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• 1997

Radioactive materials need to control, measure and protect precisely the overflow because they are dangerous. In this paper, GM-counter type radiation detector system, that can precisely measure the quantity of radioactivity using improved counting program is designed and program that can store and transfer the counted data is studied. The manufactured system, counting system of GM-counter type radiation detector, and counter program can be utilized to measure them at various methods in an atomic power plant and research centers.