• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.21-22
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• 2008

In the paper, we report several experimental data capable of evaluating the phase transformation characteristics of $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ (x =0, 0.05, 0.1) thin films. The $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ phase change thin films have been prepared by thermal evaporation. The crystallization characteristics of amorphous$Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power; 1~17 mW, pulse duration; 10~460 ns) and XRD measurement. It was found that the more Ag is doped, the more crystallization speed was 50 improved. In comparision with $Ge_2Sb_2Te_5$ thin film, the sheet resistance$(R_{amor})$ of the amorphous $Ag_x(Ge_2Sb_2Te_5)_{1-x}$ thin films were found to be lager than that of $Ge_2Sb_2Te_5$ film($R_{amor}$ $\sim10^7\Omega/\square$ and $R_{cryst}$ 10 $\Omega/\square$). That is, the ratio of $R_{amor}/R_{cryst}$ was evaluates to be $\sim10^6$ This is very helpful to writing current reduction of phase-change random acess memory.

• The Korean Journal of Ceramics
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• v.5 no.2
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• pp.171-177
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• 1999

In the $(Pb_{1-x}M_x)[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system, where M=Ca and Sr, the piezoelectric properties were evaluated to examine the possibility of application to piezoelectric transformer. A Rosen-type piezoelectric transformer was formed, then the electrical properties of voltage step-up ratio, frequency characteristics etc. were analysed. The morphotropic phase boundary was determined to be y=0.475 in $Pb[(Mn_{1/3}Sb_{2/3})_{0.05}Zr_yTi_{0.95-y}]O_3$ system and the piezoelectric properties of this composition was kp=0.59, Qm=1600 and $\varepsilon_r$=1150. Moreover, when 1-2 mol% of Sr are substituted, enhanced piezoelectric properties of kp=0.61, Qm=1600 and $\varepsilon_r$=1400 were shown. The temperature rising (ΔT) of a piezoelectric transformer with $Pb[Mn_{1/3}Sb_{2/3})_{0.05}Zr_{0.475}Ti_{0.475})]O_3 $ composition was $10^{\circ}C$, and the voltage step-up ratio was 500 when the output voltage was 4000V, whereas the ΔT was below $3^{\circ}C$ and the resonant frequency variation ($\Delta f_r$) as a function of load resistance was below 5% when the output voltage was 2000 V. These characteristics are superior to the properties of materials, which were substituted by Ca or without substitution.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.131-135
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• 2006

High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3-D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 10,000 $cm^2/V-s$ and 20,000 $cm^2/v-s$ can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.

• Transactions of Materials Processing
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• v.19 no.1
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• pp.44-49
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• 2010

It has been widely reported that carbide-free bainitic steels or super-bainite TRIP (SB-TRIP) steels for the automotive industry are a new family of steels offering a unique combination of high strength and ductility. Hence, it is important to exactly evaluate the volume fraction of RA and to identify the 3-D morphology of constituent phases, because it plays a crucial role in mechanical properties. Recently, as electron back-scattered diffraction (EBSD) equipped with focused ion beam (FIB) has been developed, 3-D EBSD technique for materials science are used to these steels. Moreover, newly developed atom probe tomography (APT) technique can provide the exact distribution and chemical concentration of alloying elements in a sub-nm scale. The APT analysis results indicate exactly the distribution and composition of alloying elements in the austenite and bainite phases of SB-TRIP steels with the atomic-scale resolution. And thus, no partitioning of aluminum and manganese atoms was showed between the austenite containing $7.73{\pm}0.39$ at% C and the bainitic ferrite associated with $0.22{\pm}0.06$ at% C in SB-TRIP steel.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.514-520
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• 1997

A single component of $Sb_2O_3$ glass has been obtained by a rapid quenching method in vacuum. The linear refractive indices were measured as a function of wavelength from 500 nm to 1060 nm. The refractive index at $n_{3{\omega}}$/(633 nm) was as high as 2.00. The optical band gap was estimated as 3.38 eV from the optical absorption spectrum. The third-order nonlinear optical intensity was determined by the third harmonic generation (THG) method. The $\chi^{(3)}$value was as high as $5.68{\times}10^{-13}$esu, about 20 times larger than that of $SiO_2$ glass.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.33-33
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• 2005

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.13-17
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• 2009

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.138-139
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• 2006

Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

• 연구논문집
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• s.33
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• pp.137-145
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• 2003

The effects of antimony addition on the microstructures and creep behavior of AZ31 magnesium alloy have been investigated. Constant load creep tests were carried out at temperatures ranging from $150^{\circ}C$ to $200^{\circ}C$, and an initial stress of 50MPa for AZ31 alloys containing antimony up to 0.84% by weight. Results show that small additions of antimony to AZ31 effectively decreased the creep extension and steady state creep rates. The steady state creep rate of AZ31 was reduced 2.5 times by the addition of 0.84% of antimony. The steady state creep rate of AZ31-0.84Sb alloy was controlled by dislocation climb in which the activation energy for creep was 128 kJ/mole. The microstructure of as-cast AZ31-0.84%Sb alloy showed the presence of $Mg_3Sb_2$ precipitates dispersed throughout the matrix. The main reason for the higher creep resistance in AZ31-Sb alloys is due to the presence $Mg_3Sb_2$, which effectively hindered the movement of dislocations during the elevated temperature creep.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1998.10a
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• pp.323-329
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• 1998

The effect of humidity on friction characteristics of friction materials were studied using a pad-on-disk type friction tester. Three different friction materials containing simplified ingredients were investigated by changing the solid lubricant, graphite, MoS$_2$, and $Sb_2S_3$. A friction material without solid lubricant was also examined to study the effect of ingredients in the matrix on humidity. Friction material containing graphite showed lower friction coefficient at high humidity level than other conditions, however, friction material containing MoS$_2$ indicated higher friction coefficient at initial stage under high humidity level. Friction materials without solid lubricant and with $Sb_2S_3$ were little affected by humidity conditions.