• Journal of the Mineralogical Society of Korea
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• v.1 no.1
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• pp.15-19
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• 1988

In the process of re-checking the phase relations of the Pt-Sb system the previously reported Pt4+Sb phase did not occur. Instead, Pt34Sb7 phase with an average chemical composition (wt%) Pt 89.3, Sb 11.4, total 100.7, has been newly found to exist, and the formula Pt34Sb7 has been tentatively assigned to it, It is pale brownish grey to yellowish grey under refloecting microscope and non-bireflectant, VHN100=225 (206-243). X-ray powder patterns are (d(I/Io)): 2.318(100), 2.293(100), 2.110(30), 1.440(50), 1.390(15), 1.283(5), 1.203(70) and 1.192(40)$\AA$. They are indexable on the basis of tertragonal cell with $\alpha$=3.948(3), c=16.85(1)$\AA$. A question whether the tetragonal Pt34Sb7 is the new phase or a polymorph of the cubic Pt4+Sb phase remains unclear and awaits better X-ray diffraction, electron microprobe analysis and DTA for the Pt4+Sb phase. The Pt3Sb phase reported to be of tetragonal symmetry has been confirmed to exist. It is greyish yellow in air and in oil, very weakly bireflectant, and weakly anisotropic. VHN25=216 (183-240). Its X-ray powder data have been successively indexed on a tetragonal cell with $\alpha$=3.9455(7), c=16.959(5)$\AA$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.1-6
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• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• Korean Journal of Crystallography
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• v.4 no.1
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• pp.18-24
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• 1993

The phase diagram of the Pt-Sb system was reinvestigated, using the conventional sealedcapsule technique. The identification of phases present in the reaction products was made by reflected light microscopy, X-ray diffraction and electron microprobe analysis. The existence of compounds, Pt5Sb, Pt3Sb, Pt3Sb2, PtSb and PtSb5 was confirmed. A new phase, Pt5Sb with a composition of 83at% Pt and tetragonal structure of the lattice parameters a=3.948(3), c=16.85(1)A, was found. The X-ray powder data of Ptsb may be indexable on a tetragonal cell with a=3.9455(7), c=16.959(5)A. PtSb is stoichiometric up to 800t and becomes Pt-deficient as much as lat% at 1000t. Solid solubility limits of Sb in Pt were determined to be 7.5,10.0 and 6.1at% at 1000˚,800˚ and 600˚ , respectively. The earlier reported Pts Sbf was not found in this study. The liquidus curve between the Ptsb2 and Sb phases was revised.

• Journal of the Korean Vacuum Society
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• v.20 no.6
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• pp.461-467
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• 2011

The valence band maximum and the conduction band miminum of GaAs, GaSb, InAs, and InSb (constituent binaries of the quaternaty alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$) are calculated by using TB analytical approach method. The band alignment types of their heterojunctions are determined directly from their relative position of band edges (VBM and CBM). For example, the GaAs/InAs, GaAs/InSb, and GaSb/InSb are in a type-I, the GaAs/GaSb in a type-II, and the GaSb/InAs and InSb/InAs in a type-III, respectively. The composition dependent VBM and CBM for the $Ga_xIn_{1-x}Sb_yAs_{1-y}$ alloy are obtained by using the univeral tight binding method. For the alloyed heterojunctions, the band alignments can be controlled by changing the composition which induce a band type transition. For the alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$ lattice mathced to GaSb, the type-II band alignment in the region of $x{\leq}0.15$ is changed to the type-III in the region of $x{\geq}0.81$. On the other hand, the alloy $Ga_xIn_{1-x}Sb_yAs_{1-y}$ lattice mathced to InAs has the type-II band alignment in the region of $x{\leq}0.15$ and the type-III band alignment in the region of $x{\geq}0.81$, respectively.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.353-359
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• 2000

$(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

• Korean Journal of Materials Research
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• v.6 no.1
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• pp.90-98
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• 1996

Mn((Cu0.66AI0.34)1-x(Bi0.3Sb0.7)x) 및 Mn((Fe0.66AI0.34)1-x(Bi0.3Sb0.7)x) 합금계의 상의 변화와 자기적 특성을 조사하였다. Mn((Cu, SI)(Bi, Sb)) 합금계는 Bi상, MnSb상, MnBi상, k-상, Heuser상, Mn2Sb 및 $\beta$-Mn상의 혼합상으로 이루어졌으며 x가 증가함에 따라 Bi상과 Mn2Sb상이 증가하고 K-상, Heusler상 및 $\beta$-Mn상이 줄어들거나 사라졌다. 자기적 성질은 자성을 띄는 MnSb상, MnBi상, Mn2Sb상, k-상 및 Hseusler상과 비자성인 Bi상과 $\beta$-Mn상의 상대적 분율에 의해 결정됨을 알 수 있었고, 150K-200K 부근에서 그 이하로 온도가 감소함에 따라 자화값이 급격히 감소하는 현상이 나타났다. Mn((Fe, AI)(Bi, Sb))합금계는 Bi상, MnSb상, MnBi상, MnBi상,$\beta$-Mn상, k-상 및 Mn2Sb상의 혼합상으로 나타났으며, 자기적 성질은 조사한 전 조성에서 강자성을 띄고 있음을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.227-235
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• 1993

$SbS_{1-x}Se_xI,\;BiS_{1-x}Se_xI,\;Sb_{1-x}Bi_xSI,\;Sb_{1-x}Bi_xSeI,\;SbS_{1-x}Se_xI:Co,\;BiS_{1-x}Se_xI:Co,\;Sb_{1-x}Bi_xSI:Co$, and $Sb_{1-x}Bi_xSeI:Co$ single crystals were grown by the vertical Bridgman method using the ingots. It has been found that these single crystals have an orthorhombic structure and indirect optical transition. The composition dependences of energy gaps are given by $E_g(x)=E_g(0)-Ax+Bx^2$. The impurity optical absorption peaks due to cobalt deped with impurity are attributed to the electron transitions between the split energy levels of $Co^{2+}$ and $Co^{3+}$ ions sited at $T_d$symmetry of the host lattice.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.189-194
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• 2013

Single phase crystalline powders of $Mg_3Sb_2$ and $Mg_3Bi_2$ were prepared by mechanical alloying Mg, Sb and Bi metals with planetary ball milling for 24~48 h. The compositions of starting raw materials for single phase $Mg_3Sb_2$ and $Mg_3Bi_2$ were 3Mg : 1.8Sb and 3Mg : 1.6Bi, respectively. Two types of mechanically alloyed powders obtained were mixed at some ratios for the fabrication of $Mg_3Sb_2-Mg_3Bi_2$ composites and then hot pressed under uniaxial pressure of 70 MPa at 723 K for 1 h. The main phase of composites was a stable phase similar to $Mg_3Bi_2$ phase with a small amount of Bi phase. The distributions of Sb and Bi elements on EDS mapping images were discontinuous and their compositional contours were clear, which means that the hot pressed specimens were composites composed of two compounds of $Mg_3Sb_2$ and $Mg_3Bi_2$.

• Journal of the Korean Magnetics Society
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• v.8 no.3
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• pp.156-160
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• 1998

Crystal structures and magneto-optical properties of $(Mn_{0.5-Z}Sb_{0.5+Z})_{100-y}Pt_y$ (0$(Mn_{0.5-Z}Sb_{0.5+Z})_{100-y}Ag_y$ (0$^{\circ}C$ are C1b-type with fcc and NiAs-type with hcp, respectively. The MnSbAg films have a texture which the c-axis orientation is perpendicular to the film plane by annealing at 300 $^{\circ}C$ for less than 3 hours. The perpendicular anisotropy constants of the $Mn_{47.4}Sb_{47.5}Ag_{5.1}$ film annealed at 300 $^{\circ}C$ for 3 hours are $K_1=6.6{\times}10^5 \; erg/cm^3\;and\;K_2=1.9{\times}10^5\; erg/cm^3$. The Kerr rotation angle of MnSbPt films increases but that of MnSbAg film decreases by decreasing incident wavelength within the range of 700$\leq$ λ$\leq$1000 nm. High polar Kerr angles of 1.7$^{\circ}$ (λ =700 nm) and 0.6$^{\circ}$ (λ =1000 nm), 0.2$^{\circ}$ (λ =700 nm) and 0.97$^{\circ}$ (λ =1000 nm) have been obtained from $Mn_{41.1}Sb_{44,9}Pt_{14.0}$ and $Mn_{47.4}Sb_{47.5}Ag_{5.1}$ alloy films, respectively.

• Journal of the Mineralogical Society of Korea
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• v.8 no.1
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• pp.13-22
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• 1995

Phase relations of the Pd-Sb system were investigated using the sealed-capsule technique; the quenched run products were studied by reflected light microscopy, X-ray diffraction, and electron microprobe analysis. Eight binary phases were confirmed to exist in the system: Pd20Sb7, Pd31Sb12, Pd8Sb3 (mertieite II), Pd5Sb2, Pd2Sb, Pd5Sb3, PdSb (sudburyite), and PdSb2, (unnamed PdSb2), The X-ray powder diffraction data of all the phases, except for Pd5Sb3, however, may be indexable on an orthorhombic cell, space group Cmc2, with a=3.362(1), b=17.484(7), c=6.934(2)$\AA$. Some physical properties as well as re-determined cell parameters are newly established. A revised phase relations of the Pd-Sb system are presented.