• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.252-252
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• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

• 마이크로전자및패키징학회지
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• 제16권1호
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• pp.13-19
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• 2009

상대습도와 $CO_2$ 기체의 실시간 동시 감지가 가능한 표면탄성파(SAW: Surface Acoustic Wave) 기반의 무선, 무전원 센서가 개발되었다. 본 소자는 $41^{\circ}YX\;LiNbO_3$ 기판 위에 만들어졌으며, 반사 지연선의 구조로 이루어져 있다. 본 논문의 반사 지연선은 양방향 감지가 가능한 Interdigital transducer(IDT)와 10개의 리플렉터(reflector)로 이루어져 있다. 감지 필름은 Teflon AF 2400과 친수성의 $SiO_2$층이 이용되었으며, 이는 각각 $CO_2$와 상대 습도의 감지를 담당한다. 소자의 제작에 앞서 최적의 소자 설계 조건들을 도출하기 위해 Couple of mode(COM) 모델링이 실시되었다. 시뮬레이션 결과를 반영하여 소자의 제작이 진행되었으며, 네트워크 분석기를 이용하여 무선 측정이 실시 되었다. 시간 영역에서 측정된 반사계수 $S_{11}$은 높은 신호 대 잡음 비, 작은 신호 감쇠, 적은 허위 피크를 보였다. 제작된 소자는 각각 $75{\sim}375ppm$의 $CO_2$ 범위와 $20{\sim}80%$의 상대 습도 범위에서 측정되었으며, 각각 $2^{\circ}/ppm$의 $CO_2$ 민감도, $7.45^{\circ}/%$의 상대습도에 대한 민감도를 보였고, 좋은 선형성과 반복성을 보였다. 또한 민감도 측정 과정에서 온도와 습도의 보상 과정을 거쳐 더욱 정확한 민감도를 갖도록 하였다.

• Korean Chemical Engineering Research
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• 제49권2호
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• pp.224-229
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• 2011

본 연구에서 탄성표면파(SH-SAW) 디바이스의 지연선에 코팅된 골드 위에서 면역 글로불린 G(IgG) 검출을 위한 SH-SAW 센서를 개발하고자 하였다. 실험결과, 금표면 위에 anti-MIgG 혼합물을 일관되게 고정시킬 수 있었다. G-anti MIgG 혼합물과 blocking buffer를 이용한 골드 표면 위에 고정화 하였을 때 주파수 변위를 측정한 결과, G-anti MIgG 는 초기 주파수에서 75.1 kHz 주파수 변위를 보였으며 blocking buffer는 215.7 kHz의 주파수 변위를 보였다. 100 MHz 센서에서 MIgG의 농도가 25, 50, 75, 100 ${\mu}g$일 때 46.3, 127.45, 161.21, 262.39 kHz 주파수 변위를 보였다.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2006년도 한국약용작물학회 공동춘계학술발표회
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• pp.40-54
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• 2006

It's not easy to detect the high quality and functional compounds for control quality of food materials. The electronic nose was an instrument, which comprised of an array of electronic chemical sensors with partial specificity and an appropriate pattern recognition system, capable of recognizing simple or complex odors. It can conduct fast analysis and provide simple and straightforward results and is best suited for quality control and process monitoring in the field of functional foods. Numbers of applications of an electronic nose in the functional food industry include discrimination of habitats for medicinal food materials, monitoring storage process, lipid oxidation, and quality control of food and/or processing with principal component analysis, neural network analysis and the electronic nose based on GC-SAW sensor. The electronic nose would be possibly useful for a wide variety of quality control in the functional food and plant cultivation when correlating traditional analytical instrumental data with sensory evaluation results or electronic nose data.

• Tribology and Lubricants
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• 제33권3호
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.