• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.4
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• pp.766-771
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• 2008

As the practical range of SAW Device extended into various fields including physical sensor, chemical sensor and ID Tag, the platform for various SAW Devices is required more than ever. While SAW ID or Sensors advanced remarkably, the development of platform which applies to SAW Sensor left much to be desired. Therefore this paper represents the SAW platform in order to use SAW ID such as ID Tag or Sensors more conveniently. The SAW platform consists of a RF module which can recognize SAW ID and a main module which has a hish performance processor in order to process the response signal of SAW ID. The main module which has a high performance processor is designed by GUI environmental type to ensure that users are able to use the platform more easily. In this paper, the SAW platform, which is based on ARM9 core processor, used Windows Embedded CE 6.0 OS which brings friendly interface to users. Also the developers can make less effort to design various applications with sensors.

• Journal of Sensor Science and Technology
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• v.16 no.3
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• pp.240-245
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• 2007

AlN thin film for SAW filter application was deposited on (100) silicon, sapphire, $Si_{3}N_{4}$/Si, and $Al_{2}O_{3}$/Si substrates by reactive magnetron sputtering method, respectively. The structural characteristics were dependent on the structure of substrates. Scanning Electron Microscope (SEM), X-ray Diffraction (XRD) and Atomic Force Microscope (AFM) have been used to analyze structural properties and preferred orientation of AlN thin films. Preferred orientation and SAW characteristic of AlN were improved by insertion of $Al_{2}O_{3}$ buffer layer. Insertion loss of SAW devices using AlN/Si and AlN/$Al_{2}O_{3}$/Si were about 33.27 dB and 30.20 dB, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.325-326
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• 2007

SAW filter was designed by optimization technique using impulse sampling. To carry out characteristics of SAW filter the uniform IDT was adapted. And SAW filter was fabricated on $LiNbO_3$ substrates to evaluate frequency response. To apply properties of photolithography, lift off method was used. Lift off method was superior to etch method in fabrication process, frequency response property was measured by network analyzer. From a measurement of acoustic property, SAW propagation velocity was 2663.5m/sec.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.5
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• pp.17-26
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• 1984

This paper reports the design methods and fabrication processes developed for a TV-lF SAW filter. The windowing method, the frequency sampling method, and the time sampling method were studied and compared to obtain a satisfactory initial impulse response. To obtain high attenuation near the trap frequency, diffraction effects were compensated. The 4fo sampling technique was used for avoiding multiple reflections at finger edges and obtaining an asymmetrical frequency response, and effective photolithographic techniques were used for electrode fingers with 11.2$\mu$ width. The developed filter is of sufficiently small size to be cost-effective and satisfies the industry specifications required for mass production.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.837-840
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• 1987

In this paper, an MSK modulator and MSK matched Filter using SAW component which is small size and can process high Frequency and wide band signals are described. This modulator and matched Filter have been shown applicable to the transmitter and receiver of spread spectrum communication systems.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.759-762
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• 2003

The epitaxially grown Mg-doped GaN thin film was prepared by MOCVD (Metal Organic Chemical Vapor Deposition) for a SAW(Surface Acoustic Wave) filter. Mg-doped GaN thin film had enough properties for a SAW filter which include crystallinity and morphology. The surface morphology and crystalline of the Mg-doped GaN thin films were characterized using AFM and an X-ray rocking curve. The SAW filter, which was fabricated by lift-off process and frequency response, was measured by HP 8753C network analyzer. Center frequency was 96.687 MHz and SAW velocity was 5801 m/s when wavelength(λ) was 60${\mu}{\textrm}{m}$. Insertion loss was over -10 dB, Q was factor over 200, and side lobe attenuation was over 22 dB which was suitable for use as a SAW filter. Electro-mechanical coupling coefficient (k$^2$) was calculated from the measured data. k$^2$ was from 1 % to 1.44 %. The fabricated SAW filter using Mg-doped GaN/sapphire structure has good qualities as a filter and will be used as a SAW filter for operating RF frequency.

• Korean Journal of Optics and Photonics
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• v.11 no.6
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• pp.423-428
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• 2000

We have demonstrated a -8 dB additional reduction in the intensity sidelobe of an apodized-interaction-strength guide-wave acousto-optic filter with a center passband of 1551.6 nm. Acoustic-intensity weighting was achieved by launching a surface acoustic wave (SAW) beam in a straight acoustic waveguide, and gradually transferring this SAW intensity to the active device, and back out, by evanescent-wave coupling across a 50 !lm barrier over a 19 rom interaction length. The intensity sidelobe was -4.27 dB for an unapodized filter with abmpt onset and cutoff of the interaction, but sidelobes were reduced to at most -12.68 dB for a SAW intensity with raised-cosine weighting. The RF driving power was 17.78 mW. A linear tuning rate of 8.86 nmIMHz and a spectral width of -1.7 nm were demonstrated. rated.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.19-25
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• 2000

In this paper, we describe RF receiver module for IMT-2000 handset with 5 MHz channel bandwidth. The fabricated RF receiver module consists of Low Noise Amplifier, RF SAW filter, Down-converter, If SAW filter, AGC and PLL Synthesizer. The NF and IIP3 of LNA is 0.8 dB, 3 dBm at 2.14 GHz, conversion gain of down-converter is 10 dB, dynamic range of AGC is 80 dB, and phase noise of PLL is -100 dBc at 100 kHz. The receiver sensitivity is -110 dBm, adjacent channel selectivity is 48 dBm.

• The Journal of the Acoustical Society of Korea
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• v.20 no.5
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• pp.69-75
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• 2001

In this paper, a fast and easy impedance matching method, which could give the impedance matching component for the general 1 or 2-port network was introduced. First, the entire network structure was defined which consists of the network part to be matched and the impedance matching part composed of inductors and capacitors. Next, the transmission matrix and input and output impedances of the entire network from the terminal impedance conditions were calculated, then the exact solutions for the matching components were obtained. To verify the efficiency of this method, this method was applied to the CDMA If band withdrawal weighted SAW transversal filter, and investigated the effects of the impedance matching before and after, through the simulation and experiment. As the result, the performance of a fractional bandwidth of 1.2%, insertion loss of 29 dB, and VSWR of 80 have improved to a factional bandwidth of 1.8％, insertion loss of 9 dB, VSWR of 3 at 85.38 MHz center frequency. The result shows that this impedance matching method could be used in the SAW devices and other types of 1 or 2-port network.

• The Journal of the Acoustical Society of Korea
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• v.9 no.2
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• pp.53-60
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• 1990

MSK waveforms are advantageous from the point of view of reduced interchannel interference. MSK waveform, however, is more difficult to generate than PSK due to its complex pulse shape. A SAW filter is ideally suited for generation of MSK waveform because it provides accurate control of the required impulse responese and linear phase at high frequncies. In this paper, an implementation of SAW based PSK-MSK convert filter, which can easily convert the high frequency PSK waveform to MSK, is studied.