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S-6,6'-Dimethyl-2,2'-diaminobiphenyl 리간드의 디클로로백금 (II) 착물 (Dichloro Platinum (II) Complex of S-6,6'-Dimethyl-2,2'-diaminobiphenyl)

  • 전무진;최승락
    • 대한화학회지
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    • 제28권6호
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    • pp.399-402
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    • 1984
  • l-tartaric acid를 이용하여 두자리 아민리간드인 6,6'-dimethyl-2,2'-dia minobiphenyl (dmdabp)를 분할하여 S광학이성질체인 S-dmdabp를 얻었다. S-dmdabp로 부터 평면사각형 착물[Pt(S-dmdabp)Cl$_2]$를 합성하였으며, 이 착물에서 S-dmdabp 리간드가 ${\delta}$-confomation으로 배위 되어 있음을 확인하였다.

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Electron Spin Resonance Studies of Mn(+2), Gd(+3) and Cu(+2) in Chalcogenide Glasses ($Al_2S_3-La_2S_3$ System)

  • Lee, Chul-Wee
    • 한국자기공명학회논문지
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    • 제6권2호
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    • pp.113-117
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    • 2002
  • The chalcogenide glass (ALS, $Al_2S_3-La_2S_3$) was prepared by melting a stoichiometric mixture of aluminum powder and $La_2S_3$ under $H_2S$ atmosphere at $1200{\circ}C$. Glasses containing 0.1-0.1% of $Mn^{2+},\;Gd^{3+}$ and $Cu^{2+}$ were also prepared. The characteristic features of the ESR spectra for the transition metal containing ALS glasses are interpreted.

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SnS2/p-Si 이종접합 광 검출기 (SnS2/p-Si Heterojunction Photodetector)

  • 오창균;차윤미;이경남;정복만;김준동
    • 전기학회논문지
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    • 제67권10호
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    • pp.1370-1374
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    • 2018
  • A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

Studies of point defects for annealed $AgInS_{2}/GaAs$ epilayer

  • Kwang-Joon Hong;Seung Nam Baek;Jun Woo Jeong
    • 한국결정성장학회지
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    • 제12권4호
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    • pp.196-201
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    • 2002
  • The $AgInS_{2}$ epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurements, a temperature dependence of the energy band gap on $AgInS_{2}/GaAs$ was found to be $Eg(T)=2.1365eV-(9.89{\times}10^{-3}eV)T^{2}/(2930+T)$. After the as-grown $AgInS_{2}/GaAs$ was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of $AgInS_{2}/GaAs$ has been investigated by using photoluminescence measurements at 10 K. The native defects of $V_{Ag},\;V_{S},\;Ag_{int}$ and $S_{int}$ obtained from photoluminescence measurements were classified as donors or accepters. It was concluded that the heat-treatment in the S-atmosphere converted $AgInS_{2}/GaAs$ to an optical p-type. Also, it was confirmed that In in $AgInS_{2}/GaAs$ did not form the native defects because In in $AgInS_{2}$ did exist in the stable form.

Annealing effects of AgInS$_2$/GaAs Epilayer grown by Hot Wall Epitaxy

  • K. J. Hong;Park, C.S.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.823-827
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    • 2001
  • The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of Eg(T)=2.1365 eV-(9.89${\times}$10$\^$-3/ eV)T$^2$/(2930+T). After the as-grown AgInS$_2$/GaAs was annealed in Ag-,S-, and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V$\_$Ag/, V$\_$s/, Ag$\_$int/, and S$\_$int/ obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did net from the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

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홍삼으로부터 분리한 수용성 갈변물질의 항산화 활성 1. DPPH의 수소공여능 및 hydrogen peroxide 소거능 중심으로 (Antioxidant Activity of the Water Soluble Browning Reaction Products Isolated from Korean Red Ginseng 1. DPPH Radical and Hydrogen Peroxide Scavenging)

  • 이종원;도재호;심기환
    • Journal of Ginseng Research
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    • 제23권3호
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    • pp.176-181
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    • 1999
  • 홍삼에서 분리한 수용성 갈변물질의 항산화 활성을 DPPH 수소공여능 및 hydrogen peroxide 시스템에서 조사한 결과를 다음과 같다. 1. DPPH 수소공여능 수용성 갈변물질 S-1, S-2는 반응시간이 경과함에 따라 완만하게 감소하였고, L은 S-1, S-2보다 시간이 경과 함에 따라 감소폭이 증가하였다. L의 경우 BHT, BHA $5{\times}10^{-4}M,\;{\alpha}-tocopherol\;1{\times}10^{-4}M$ 및 ascorbic acid $5.7{\times}10^{-3}M$ 보다 감소폭이 증가하였으나, S-1, S-2는 합성 항산화제와 감소폭이 비슷하였다. 2. Synergist 효과 L, S-1 및 S-2 와 상기의 합성 항산화제 농도와 시너지스트 효과를 조사한 결과, 모든 시험구에서 반응 시간이 경과 함에 따라 감소폭이 증가하여 시너지스트 효과가 나타났다. 3. Hydrogen Peroxide 소거능 :수용성 갈변물질의 hydrgen peroxide 소거능을 조사한 결과, L은 $50\~80\%$, S-1은 $70\~100\%,$ S-1은 모든 첨가구에서 반응 초기부터 $100\%$로 완전히 소거되었다.

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식용(食用)버섯류(類)의 아미노산(酸)에 관(關)한 연구(硏究) (A Study on the Amino Acid Contents of Edible Mushrooms)

  • 표명윤;노일협
    • Journal of Nutrition and Health
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    • 제8권1호
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    • pp.47-59
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    • 1975
  • Free amino acids in extracts and total amino acids in hydrolysates of eleven species of edible mushrooms were analyzed by amino acid autoanalyzer (Technicon PNC-1 Type). All these 11 species of mushroom can be repesented for convenience sake as follows. S-1; Agaricus campestris Fr. S-2: Agaricus campestris S-3; Pholiota nameko(I. Ito) S. Ito et Imai S-4; Auricularia auricula-judae(Fr.) $Qu{\acute{e}}l$ S-5; Tremella fuciformis Berk. S-6; Tricholoma matsutake(S. Ito et Imai) Sing. S-7; Pleurotus ostreatus Fr. $Qu{\acute{e}}l$ S-8; Lentinus edodes Berk Sing. S-9; Ramaria botrytis (Pers.) Ricken S-10; Coprinus comatus(Fr.) S.F, Gray S-11; Gyrophora esculenta The results obtained from this study are as follows. 1) 17 kinds of amino acid, including 7 kinds of essential amino acid in human nutrition except tryptophan were identified and quantified. 2) Of all free amino acids contained in mushrooms, glutamic acid is the richest, and then comes Ala, Thr, Pro and Lys in that order. There were no found Cys'and His in S-9;His in S-1; Met and Arg in S-11; Cys and Met in S-5;Pro, Cys, Met, Lys and Arg in S-4. Of all total amino acids which are closely related with nutritional valuation, glutamic acid is the richest, and then comes Asp, Ala, Arg, Leu, Thr, Gly in that order. Especially S-1 and S-2 contain high quantity $o{\acute{i}}$ proline in both free and total amino acids. 3) Cotents of ammonia in extracts of mushrooms in decreasing order in S-1, S-10, S-8, S-2, S-7, S-6, and S-2, S-6, S-8, S-9, S-1 in hydrolysates of mushrooms. 4) Gross Contents of free amino acid in extracts is high in decreasing order in S-10, S-1, S-7, S-6, S-8, and total amino acid in hydrolysates is high in S-10, S-2, S-2, S-8, S-1, S-9, S-6. 5) Besides 17 kinds of amino acid, 5 kinds of unknown amino acid are found in extracts and hydrolysates.

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광도, 온도 및 $CO_2$의 농도가 헛개나무의 광합성에 미치는 영향 (Effect of Light Intensity, Temperature and $CO_2$ Concentration on Photosynthesis in Hovenia dulcis Thunb.)

  • 이강수;최선영
    • 한국약용작물학회지
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    • 제10권1호
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    • pp.1-4
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    • 2002
  • 본 연구는 헛개나무의 광합성 효율증진을 위한 기상환경 조건을 규명하여 재배적지의 선정과 재배관리에 대한 기초적 자료를 제공하고자 광도와 온도, 그리고 $CO_2$의 농도에 대한 광합성과 증산량을 조사하였다. 광 보상점은 $2.4\;{\mu}mol\;m^{-2}\;s^{-1}$이었고, 포화점은 $1033\;{\mu}mol\;m^{-2}\;s^{-1}$이었다. 광도 $100\;{\mu}mol\;m^{-2}\;s^{-1}$에서 광합성의 최적온도는 $25^{\circ}C$이었다. 이산화탄소 보상점은 67 vpm이었고, 포화점은 707 vpm이었다. 증산량은 광도가 $1750\;{\mu}mol\;m^{-2}\;s^{-1}$까지 그리고 온도가 $18^{\circ}C$에서 $36^{\circ}C$까지 높아질수록 $2\;mmol\;m^{-2}\;s^{-1}$$4\;mmol\;m^{-2}\;s^{-1}$정도로 각각 증가하였으나 이산화탄소 농도가 21 vpm에서 800 vpm으로 높아질 때는 감소하는 경향이었다.

Analyzing the Significance of T1 Slope minus Cervical Lordosis in Patients with Anterior Cervical Discectomy and Fusion Surgery

  • Lee, Ho Jin;You, Soon Tae;Sung, Jae Hoon;Kim, Il Sup;Hong, Jae Taek
    • Journal of Korean Neurosurgical Society
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    • 제64권6호
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    • pp.913-921
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    • 2021
  • Objective : Accurate measurement of T1 slope (a component of T1s minus cervical lordosis [CL]) is often constrained by anatomical limitations. In this situation, efforts should be made to find the exact meaning of T1s-CL and whether there are any alternatives to it. Methods : We enrolled 117 patients who received two-level anterior cervical discectomy and fusion (ACDF). Occipital slope, C2 slope (C2s), C7 slope (C7s), T1, O-C2 angle (O-C2A), C2-7 angle (C2-7A), O-C7 angle (O-C7A), T1s-CL, C7-T1 angle (C7-T1A), and C2-7 sagittal vertical axis were measured. We determined 16° (T1s-CL) as the reference point for dividing subjects into the mismatch group and the balance group, and a comparative analysis was performed. Results : The mean value of C7-T1A was constantly maintained within 2.6° peri-operatively. In addition, C2s and T1s-CL showed the same absolute change (Δ|0.8|°). The mean values of T1s-CL of the mismatch and balance groups were 23.0° and 7.6°, respectively. The five factors with the largest differences between the two groups were as follows : C2s (Δ13.3°), T1s-CL (Δ15.4°), O-C2A (Δ8.7°), C2-7A (Δ14.7°), and segmental angle (Δ7.9°) before surgery. Only four factors showed statistically significant change between the two groups after ACDF : T1s-CL (Δ4.0° vs. Δ0.2°), C2s (Δ3.2° vs. Δ0.7°), O-C2A (Δ2.6° vs. Δ1.3°), C2-7A (Δ6.3° vs. Δ1.3°). A very strong correlation between T1s-CL and C2s was also found (r=|0.88-0.96|). Conclusion : C2s itself may be the essential key to represent T1s-CL. The amounts and directions of change of these two factors (T1s-CL and C2s) were also almost identical. The above phenomenon was re-confirmed once again through the correlation analysis.

열처리된 AgInS$_2$ 박막의 defect 연구 (Defect studies of annealed AgInS$_2$ epilayer)

  • 백승남;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.257-265
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    • 2002
  • A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

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