• Title/Summary/Keyword: S-parameters

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A study on the Effects of Input Parameters on Springback Prediction Accuracy (스프링백 해석 정도 향상을 위한 입력조건에 관한 연구)

  • Han, Y.S.;Oh, S.W.;Choi, K.Y.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2007.05a
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    • pp.285-288
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    • 2007
  • The use of commercial finite element analysis software to perform the entire process analysis and springback analysis has increased fast for last decade. Pamstamp2G is one of commercial software to be used widely in the world but it has still not been perfected in the springback prediction accuracy. We must select the combination of input parameters for the highest springback prediction accuracy in Pamstamp2G because springback prediction accuracy is sensitive to input parameters. Then we study the affect of input parameters to use member part for acquiring high springback prediction accuracy in Pamstamp2G. First, we choose important four parameters which are adaptive mesh level at drawing stage and cam flange stage, Gauss integration point number through the thickness and cam offset on basis of experiment. Second, we make a orthogonal array table L82[(7)] which is consist of 8 cases to be combined 4 input parameters, compare to tryout result and select main factors after analyzing affect factors of input parameters by Taguchi's method in 6 sigma. Third, we simulate after changing more detail the conditions of parameters to have big affect. At last, we find the best combination of input parameters for the highest springback prediction accuracy in Pamstamp2G. The results of the study provide the selection of input parameters to Pamstamp2G users who want to Increase the springback prediction accuracy.

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An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications

  • Ghosh, Pujarini;Haldar, Subhasis;Gupta, R.S.;Gupta, Mridula
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.4
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    • pp.377-387
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    • 2012
  • An intrinsic small signal equivalent circuit model of Cylindrical/Surrounded gate MOSFET is proposed. Admittance parameters of the device are extracted from circuit analysis and intrinsic circuit elements are presented in terms of real and imaginary parts of the admittance parameters. S parameters are then evaluated and justified with the simulated data extracted from 3D device simulation.

Kinematic Characteristics during of Gait in Parkinson's Disease Patients (파킨슨 질환 환자의 보행시 운동형상학 특성)

  • You, Jae-Eung;An, Chang-Sik
    • The Journal of Korean Physical Therapy
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    • v.13 no.2
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    • pp.453-458
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    • 2001
  • The aim of this study is to present the basic reference data of age and specific gait parameters for Parkinson's Disease Patients. The basic gait parameters were extracted from 5 patients, 5 men and 65 years of age using VICON 512 Motion Analyzer. The temporal gait parameters and kinematic parameters is data of Parkinson's Disease Patients. The results were as follows; 1. The cadence, velocity, stride length decreased and single limb support period, double limb support period increased than normal adult in the temporal parameters. 2. The mean angles of joint pelvic tilt and hip, knee, ankle joint decreased than normal adult at kinematic characteristics on sagittal plane. 3. The mean angles of joint pelvic tilt and hip, knee joint has no difference than normal adult at kinematic characteristics on coronal plane. 4. The mean angles of joint pelvic tilt, hip joint no difference and internal, external rotation in ankle joint significantly decreased than normal adult at kinematic characteristics on transverse plane.

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GA-fuzzy $P^2ID$ Control System for Flexible-joint Robot Arm

  • Tangcharoensuk, Teranun;Purahong, Boonchana;Sooraksa, Pitikhate
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.969-972
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    • 2005
  • This paper presents a GA-fuzzy $P^2ID$ control system for the flexible-joint robot arm. This controller is designed based on the parameter adjustment using fuzzy logic and genetic algorithms. According to the simulations, the better performance has been achieved acquired that the robot moved smoothly and met its required objectives. The results of comparison between 8 parameters and 10 parameters can be conclusion that the 10 parameters have setting time little than 8 parameters. In usability can be use 8 or 10 parameters these one.

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T-S Fuzzy Model-Based Adaptive Synchronization of Chaotic System with Unknown Parameters (T-S 퍼지 모델을 이용한 불확실한 카오스 시스템의 적응동기화)

  • Kim, Jae-Hun;Park, Chang-Woo;Kim, Eun-Tai;Park, Mignon
    • Journal of the Korean Institute of Intelligent Systems
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    • v.15 no.2
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    • pp.270-275
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    • 2005
  • This paper presents a fuzzy model-based adaptive approach for synchronization of chaotic systems which consist of the drive and response systems. Takagi-Sugeno (T-S) fuzzy model is employed to represent the chaotic drive and response systems. Since the parameters of the drive system are assumed unknown, we design the response system that estimates the parameters of the drive system by adaptive strategy. The adaptive law is derived to estimate the unknown parameters and its stability is guaranteed by Lyapunov stability theory. In addition, the controller in the response system contains two parts: one part that can stabilize the synchronization error dynamics and the other part that estimates the unknown parameters. Numerical examples, including Doffing oscillator and Lorenz attractor, are given to demonstrate the validity of the proposed adaptive synchronization approach.

A Simplified GaAs MESFET Modeling for the Design of Ultrabroad-Band Microwave Amplifiers (초광대역 마이크로파 증폭기 설계를 위한 단순화한 GaAs MESFET 모델링)

  • Yoon, Young-Chul;Kim, Byung-Chul;Ahn, Dal;Chang, Ik-Soo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.9
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    • pp.1308-1316
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    • 1989
  • A simplified 10-element GaAs MESFET equivalent circuit model has been presented which is suitable for the design of ultrabroad-band microwave small-signal amplification, the these circuit element values are extracted from measured S-parameters using complex-curve fitting algorithm. Packaged GaAs MESFET equivalent circuits are composed of intrinsic \ulcornermodel and several extrinsic elements at microwave frequencies, of which the largest effects are caused by package lead inductances. If these are eliminated from measured S-parameters, newly obtained S-parameters are closed to intrinsic \ulcornermodel, and the rest element values can be easily extracted. The modeling results applied to the packaged GaAs MESFET NE71083 are almost equal between the measure S-parameters and the mideled S-parameters within b 2% errors from DC to 8GHz, and errors are increased to \ulcorner% upto 12GHz wide bandwidth.

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Least Squares Method-Based System Identification for a 2-Axes Gimbal Structure Loading Device (2축 짐벌 구조 적재 장치를 위한 최소제곱법 기반 시스템 식별)

  • Sim, Yeri;Jin, Sangrok
    • The Journal of Korea Robotics Society
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    • v.17 no.3
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    • pp.288-295
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    • 2022
  • This study shows a system identification method of a balancing loading device for a stair climbing delivery robot. The balancing loading device is designed as a 2-axes gimbal structure and is interpreted as two independent pendulum structures for simplifying. The loading device's properties such as mass, moment of inertia, and position of the center of gravity are changeable for luggage. The system identification process of the loading device is required, and the controller should be optimized for the system in real-time. In this study, the system identification method is based on least squares method to estimate the unknown parameters of the loading device's dynamic equation. It estimates the unknown parameters by calculating them that minimize the error function between the real system's motion and the estimated system's motion. This study improves the accuracy of parameter estimation using a null space solution. The null space solution can produce the correct parameters by adjusting the parameter's relative sizes. The proposed system identification method is verified by the simulation to determine how close the estimated unknown parameters are to the real parameters.

A Policy on WLAN MAC Parameters Usage for QoS Provisioning (QoS 지원을 위한 WLAN MAC 파라미터 운용 방안)

  • Jeong, Dae-In;Hong, Chang-Hyun
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.11B
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    • pp.698-706
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    • 2005
  • In this paper, we investigate the parameters of the IEEE 802.11e MAC protocol, CWmin and AIFS, in terms of their capability of QoS control. The delay and the bandwidth performances are selected as the QoS medics to examine the characteristics of those parameters. A policy on MAC parameters usage, thereby, is proposed. We regard the MAC-level traffic classification as the differentiation in the channel accessibility, and thus the delay differentiation is referred to a main issue of the class-level QoS control. Realizing the tight relationship between the delay performance and the parameter AIFS, we derive an analytical expression of their relationship through an analysis of the MAC mechanism. Various simulations are examined which show the validity of our assertions, and a policy on the parameters usage is proposed based on those observations.

Parameter Extraction of HEMT Small-Signal Equivalent Circuits Using Multi-Bias Extraction Technique (다중 바이어스 추출 기법을 이용한 HEMT 소신호 파라미터 추출)

  • 강보술;전만영;정윤하
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.353-356
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    • 2000
  • Multi-bias parameter extraction technique for HEMT small signa] equivalent circuits is presented in this paper. The technique in this paper uses S-parameters measured at various bias points in the active region to construct one optimization problem, of which the vector of unknowns contains only a set of bias-independent elements. Tests are peformed on measured S-parameters of a pHEMT at 30 bias points. Results indicate that the calculated S-parameters is similar to the measured data.

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An Ebers-Moll Model for Heterojunction Bipolar Transistor's (이종접합 쌍극성 트랜지스터의 Ebers-Moll 모델)

  • 박광민;곽계달
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.3
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    • pp.88-94
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    • 1993
  • In this paper, a simple Ebers-Moll Model for the heterojunction bipolar transistor is presented. Using the model structure for the npn type HBT, the current-voltage characteristics was analyzed. And from the obtained terminal currents, the Ebers-Moll equations were derived. Then substituting the physical parameters for heterojunction to those for homojunction, this model would be used to analyze the characteristics of single and/or duble heterojunction HBT's. And directly relating model parameters to device parameters, it would be also used to optimize the characteristics of HBT's. The simulated results using this model were in good agreement with experimental data.

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