• Title/Summary/Keyword: S-doping

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Development of Bismuth Alloy-Based Anode Material for Lithium-Ion Battery (리튬이온 전지용 Bismuth 합금 기반 음극재 개발)

  • Chi Rong Sun;Jae Hoon Kim
    • Clean Technology
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    • v.30 no.1
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    • pp.23-27
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    • 2024
  • Bismuth is a promising anodic for Li-ion batteries (LIBs) due to its adequate operating voltage and high-volume capacity (3,765 mAh cm-3). Nevertheless, inevitable volume expansion during Bi alloy reactions leads to severe capacity loss and cell destruction. To address this, a complex of bismuth alloy nanoparticles (Bi@NC) embedded in an N doping-carbon coating is fabricated via a simple pyrolysis method. Nano-sized bismuth alloys can improve the reaction dynamics through a shortened Li+-ion diffusion path. In addition, the N-doped carbon coating effectively buffers the volume change of bismuth during the extended alloy/dealloy reaction with Li+ ions and maintains an effective conductive network. Based on the Thermogravimetric analysis (TGA) showed high bismuth alloy loading (80.9 wt%) and maintained a high gravimetric capacity of 315 mAh g-1 up to 100 cycles with high volumetric capacity of 845.6 mAh cm-3.

Synthesis of Doped Polymethylphenylsilane Conductive Polymers and their Structure Characteristics (포리메틸페닐실란계 전도성 고분자의 합성과 구조 특성)

  • Yang, Hyun-Soo;Kang, Phil-Hyun;Kim, Jeong-Soo;Ryu, Hae-il;Kim, Young-Ho
    • Applied Chemistry for Engineering
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    • v.7 no.5
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    • pp.954-962
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    • 1996
  • Four kind of polysilanes which had side chains of methyl, phenyl, and mixed structures, were synthesized and modified by doping with iodine. The structural, thermal, and electric characteristics of obtained polymers were systematically observed with iodine, The structural, thermal, and electric characteristics of obtained polymers were systematically observed with FT-IR, UV/VIS, TGA/DTG, DSC, and measurement of electric conductivity. From FT-IR spectra, it was confirmed that the synthesized polysilanes had side chains of methyl, phenyl, and mixed structures. The thermal stabilities of the polymers were found to increase with phenyl substituents. The polysilanes with phenyl side groups showed ${\sigma}-{\sigma}*$ transition absorption at wavelengths longer than 350 nm. The bathochromic shift of polysilanes with phenyl substituents relates probably to the narrowed band gap caused by delocalization of ${\pi}$-electron. The polymers doped with iodine showed multi-step pyrolysis behavior and higher residue compared with that of the undoped polymers. The electric conductivities of the undoped and doped polysilanes were $10^{-5}S/cm$ and $10^{-4}S/cm$, respectively.

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Synthesis of Self-doped Poly(PEGMA-co-BF3LiMA) Electrolytes and Effect of PEGMA Molecular Weight on Ionic Conductivities (자기-도핑형 poly(PEGMA-co-BF3LiMA) 전해질의 합성과 이온전도도에 대한 PEGMA분자량의 영향)

  • Kim, Kyung-Chan;Ryu, Sang-Woog
    • Journal of the Korean Electrochemical Society
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    • v.15 no.4
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    • pp.230-235
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    • 2012
  • Polymer electrolytes consisted of $BF_3LiMA$ and 300 (PEGMA300) or 1100 (PEGMA1100) g $mol^{-1}$ of PEGMA were prepared and the electrochemical properties were characterized. Interestingly, the AC-impedance measurement shows $1.22{\times}10^{-5}S\;cm^{-1}$ of room temperature ionic conductivity from PEGMA1100 based solid polymer electrolytes while $8.54{\times}10^{-7}S\;cm^{-1}$ was observed in PEGMA300 based liquid polymer electrolytes. The more suitable coordination between lithium ion and ethylene oxide (EO) unit might be the reason of higher ionic conductivity which can be possible in PEGMA1100 based electrolytes since it has 23 EO units in monomer. The lithium ion transference number was found to be 0.6 due to the side reactions between $BF_3$ and lithium metal expecially for longer time but 0.9 was observed within 3000 seconds of measuring time which is strong evidence of a single-ion conductor.

Effect of Fe and BO3 Substitution in Li1+xFexTi2-x(PO4)3-y(BO3)y Glass Electrolytes (Li1+xFexTi2-x(PO4)3-y(BO3)y 계 유리 전해질에서 Fe 및 BO3 치환 효과)

  • Choi, Byung-Hyun;Jun, Hyung Tak;Yi, Eun Jeong;Hwang, Haejin
    • Journal of the Korean Electrochemical Society
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    • v.24 no.3
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    • pp.52-64
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    • 2021
  • The effect of Fe and BO3 doping on structure, thermal, and electrical properties of Li1+xFexTi2-x(PO4)3-y(BO3)y (x = 0.2, 0.5)-based glass and glass ceramics was investigated. In addition, their crystallization behavior during sintering and ionic conductivity were also investigated in terms of sintering temperature. FT-IR and XPS results indicated that Fe2+ and Fe3+ ions in Li1+xFexTi2-x(PO4)3-y(BO3)y glass worked as a network modifier (FeO6 octahedra) and also as a network former (FeO4 tetrahedra). In the case of the glass with low substitution of BO3, boron formed (PB)O4 network structure, while boron preferred BO3 triangles or B3O3 boroxol rings with increasing the BO3 content owing to boic oxide anomaly, which can result in an increased non-bridging oxygen. The glass transition temperature (GTT) and crystallization temperature (CT) was lowered as the BO3 substitution was increased, while Fe2+ lowered the GTT and raised the CT. The ionic conductivity of Li1+xFexTi2-x(PO4)3-y(BO3)y glass ceramics were 8.85×10-4 and 1.38×10-4S/cm for x = 0.2 and 0.5, respectively. The oxidation state of doped Fe and boric oxide anomaly were due to the enhanced lithium ion conductivity of glass ceramics.

Growth and characterization of GaAs and AlGaAs with MBE growth temperature (MBE 성장온도에 따른 GaAs 및 AlGaAs의 전기광학적 특성)

  • Seung Woong Lee;Hoon Young Cho;Eun Kyu Kim;Suk-Ki Min;Jung Ho Park
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.1
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    • pp.11-20
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    • 1994
  • GaAs and AlGaAs epi-layers were grown on semi-insulating (100) GaAs substrate by molecular beam epitaxy (MBE) and their electrical and optical properties have been investigated by several measurements. In undoped GaAs, the p-type GaAs layers with the good surface morphology were obtained under the growth conditions of the substrate temperatures ranging from 570 to $585^{\circ}C$ and the $As_4$/Ga ratios from 17 to 22. In the samples with the growth rates of the ranges of $0.9~1.1 {\mu}m/h$, the impurity concentrations were in the ranges of $1.5{\times}10^{14}~5.6{\times}10^{14}cm^{-3}$ with the Hall mobilities of $590~410cm^2/V-s$. In the Si-doped GaAs, the n-type GaAs layers with low electro trap, only two hole deep levels were observed with uniform doping profiles (<1%). AlGaAs layers with good surface morphology and crystallinity were grown under an optimum condition of the substrate temperature, $600^{\circ}C $. 8 deep level defects were observed between 0.17~0.85eV in undoped AlGaAs layers.

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Ferroelectric Properties of Ti-Doped and W-Doped SBT Ceramics (Ti와 W이 첨가된 SBT 세라믹스의 강유전 특성)

  • 천채일;김정석
    • Journal of the Korean Ceramic Society
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    • v.41 no.5
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    • pp.401-405
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    • 2004
  • Undoped SrB $i_2$T $a_2$O$_{9}$, donor-doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ and acceptor-doped SrB $i_2$(Ta$_{0.99}$Ti$_{0.01}$)$_2$O$_{8.99$ ceramics were prepared and their microstructure, ferroelectric P-E hysteresis and Curie temperature were investigated. Grain size did not influence P-E hysteresis curve in undoped SrB $i_2$T $a_2$O$_{9}$ ceramics. Donor-Doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ ceramics showed more saturated P-E hysteresis curve with larger remanent polarization (P$_{r}$) than undoped SrB $i_2$T $a_2$O$_{9}$ ceramics while acceptor-doped SrB $i_2$(Ta$_{0.99}$Ti$_{0.01}$)$_2$O$_{8.99}$ ceramics led to a pinched P-E hysteresis loop. Larger polarization in donor-doped Sr$_{0.99}$B $i_2$(Ta$_{0.99}$W$_{0.01}$)$_2$O$_{9}$ ceramics resulted from easier domain wall motion by Sr-vacancies.

Electronic Structure and Elemental Composition of the Lead Sulfide Colloidal Quantum Dots Depending on the Types of Ligand and Post-Treatment (리간드 종류와 후처리 공정에 따른 황화납 콜로이드 양자점 박막의 전자 구조 및 원소 조성 분석)

  • Kim, Tae Gun;Choi, Hyekyoung;Jeong, Sohee;Kim, Jeong Won
    • Journal of the Korean Chemical Society
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    • v.60 no.6
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    • pp.402-409
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    • 2016
  • Thin films of lead sulfide colloidal quantum dots (CQDs) of 2.8 nm in diameter are fabricated and their surfaces are passivated by 3-mercaptopropionic acid (MPA) ligand or hybrid type ($MPA+CdCl_2$) ligand, respectively. The changes in valence band electronic structure and atomic composition of each PbS CQD film upon post-treatment such as air, N2 annealing or UV/Ozone have been studied by photoelectron spectroscopy. The air annealing makes the CQD fermi level to move toward the valence band leading to "p-type doping" regardless of ligand type. The UV/Ozone post-treatment generates $Pb(OH)_2$, $PbSO_x$ and PbO on both CQD surfaces. But the amount of the PbO has been reduced in hybrid type ligand case, especially. That is probably because the extra Pb cations in (111) surface are additionally passivated by $Cl_2$ ligand, which limits the reaction between the Pb cation and ozone.

The Effect of Promoter on the SO2-resistance of Fe/zeolite Catalysts for Selective Catalytic Reduction of NO with Ammonia (NO의 암모니아 선택적 촉매환원반응을 위한 철 제올라이트 촉매의 내황성에 미치는 조촉매 효과)

  • Ha, Ho-Jung;Choi, Joon-Hwan;Han, Jong-Dae
    • Clean Technology
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    • v.21 no.3
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    • pp.153-163
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    • 2015
  • The effects of H2O and residue SO2 in flue gases on the activity of the Fe/zeolite catalysts for low-temperature NH3-SCR of NO were investigated. And the addition effect of Mn, Zr and Ce to Fe/zeolite for low-temperature NH3-SCR of NO in the presence of H2O and SO2 was investigated. Fe/zeolite catalysts were prepared by liquid ion exchange and promoted Fe/zeolite catatysts were prepared by liquid ion exchange and doping of Mn, Zr and Ce by incipient wetness impregnation. Zeolite NH4-BEA and NH4-ZSM-5 were used to adapt the SCR technology for mobile diesel engines. The catalysts were characterized by BET, X-ray diffraction (XRD), SEM/EDS, TEM/EDS. The NO conversion at 200 ℃ over Fe/BEA decreased from 77% to 47% owing to the presence of 5% H2O and 100 ppm SO2 in the flue gas. The Mn promoted MnFe/BEA catalyst exhibited NO conversion higher than 53% at 200 ℃ and superior to that of Fe/BEA in the presence of H2O and SO2. The addition of Mn increased the Fe dispersion and prevented Fe aggregation. The promoting effect of Mn was higher than Zr and Ce. Fe/BEA catalyst exhibited good activity in comparison with Fe/ZSM-5 catalyst at low temperature below 250 ℃.

Electrical and Chemical Properties of ultra thin RT-MOCVD Deposited Ti-doped $Ta_2O_5$

  • Lee, S. J.;H. F. Luan;A. Mao;T. S. Jeon;Lee, C. h.;Y. Senzaki;D. Roberts;D. L. Kwong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.4
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    • pp.202-208
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    • 2001
  • In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

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Zn/Co ZIF derived synthesis of Co-doped ZnO nanoparticles and application as high-performance trimethylamine sensors (Co가 도핑된 ZnO 나노입자의 Zn/Co ZIF 유도 합성 및 고성능 트리메틸아민 센서로의 응용)

  • Yoon, Ji-Wook
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.5
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    • pp.222-227
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    • 2018
  • $Zn_{1-x}Co_x$ Zeolitic Imidazolate Framework (ZIF) (x = 0~0.05) were prepared by the co-precipitation of $Zn^{2+}$ and $Co^{2+}$ using 2-methylimidazole, which were converted into pure and Co-doped ZnO nanoparticles by heat treatment at $600^{\circ}C$ for 2 h. Homogeneous Zn/Co ZIFs were achieved at x < 0.05 owing to the strong coordination of the imidazole linker to $Zn^{2+}$ and $Co^{2+}$, facilitating atomic-scale doping of Co into ZnO via annealing. By contrast, heterogeneous Zn/Co ZIFs were formed at $x{\geq}0.05$, resulting in the formation of $Co_3O_4$ second phase. To investigate the potential as high-performance gas sensors, the gas sensing characteristics of pure and Co-doped ZnO nanoparticles were evaluated. The sensor using 3 at% Co-doped ZnO exhibited an unprecedentedly high response and selectivity to trimethylamine, whereas pure ZnO nanoparticles did not. The facile, bimetallic ZIF derived synthesis of doped-metal oxide nanoparticles can be used to design high-performance gas sensors.