• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.9
• /
• pp.21-30
• /
• 1999

Halo pocket implantation in MOSFETs, which is known to be an efficient method to provent the punchthrough and threshold voltage roll-off phenomena, decreases the drain current of MOSFET devices. Although the decrease of the drain current in halo structure MOSFET is usually explained in terms of the increase of the threshold voltage, more decrease in the drain current than is predicted by the increased threshold voltage has experimentally been observed. In this work, the effect of halo doping profile on the drain current degradation is investigated in terms of the field distribution along the channel. Effective mobility model of the halo MOSFETs due to pocket implantation is presented and the degradation of the mobility is shown to be effective in the further decrease of the drain current. Present model is shown to be in good agreement with experimental results.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.21 no.5
• /
• pp.205-209
• /
• 2011

Zinc oxide has semi-conductivity and super conductivity characteristics. It can be used optically and is applied on many areas such as gas sensor, solar cell and optical waveguide. In this paper, to improve optical characteristics of ZnO, aluminum was added on zinc oxide. Zinc oxide and aluminum zinc oxide was fabricated as nano fiber form. ZnO solution was created by mixing poly vinyl pyrrolidone, ethyl alcohol, and zinc acetate. An Al doped ZnO was created by adding aluminum solution to ZnO sol. By applying these sols on electro spinning method, nano fibers were fabricated. These fibers are heat treated at 300, 500, and $700^{\circ}C$ degrees and were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to examine the nano structures. TGA and DSC measurement was also used to measure the change of mass and calorie upon temperature change. The absorbance of ZnO and Al-doped ZnO was carried out by UV-vis measurement.

• Applied Chemistry for Engineering
• /
• v.7 no.5
• /
• pp.992-998
• /
• 1996

The $La_{0.8}Ca_{0.2}CoO_3$ prepared by a citrate process was shown to have higher oxygen reduction current density and specific activity than $LaCoO_3$, $La_{0.6}Ca_{0.4}CoO_3$. In the cyclic voltammogram, an oxygen desorption peak of a $La_{0.8}Ca_{0.2}CoO_3$+carbon electrode was larger than that of a only carbon electrode. $La_{0.8}Ca_{0.2}CoO_3$ sintered at $900^{\circ}C$ for 5 hours was shown high oxygen reduction current density because of the particle size distribution and sintering effect.

• Membrane Journal
• /
• v.20 no.1
• /
• pp.21-28
• /
• 2010

Organic/inorganic composite electrolyte membranes were prepared for dye sensitized solar cell (DSSC). Poly (ethylene glycol) (PEG)s with various molecular weight (600, 1,500, 2,000 and 3,400) were ethoxysilated to fabricate organic/inorganic composite materials through sol-gel processes. The electrolyte membranes were produced by doping the composite materials with KI and $I_2$, and their ionic conducting behaviors were investigated. The ionic conductivity of the composite membrane was highly affected by PEG molecular weight. The highest conductivity was shown by the composite membrane prepared with PEG with the molecular weight of 2,000. The composite electrolyte membranes showed considerable improvement of ionic conductivity. Compared to PEO electrolyte membranes, the composite electrolyte membrane by PEG, MW 2,000 showed much higher ionic conductivity.

• Korean Journal of Materials Research
• /
• v.7 no.10
• /
• pp.856-862
• /
• 1997

박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

• Korean Journal of Materials Research
• /
• v.26 no.12
• /
• pp.757-763
• /
• 2016

$Ho^{3+}/Yb^{3+}/Tm^{3+}$ tri-doped $NaY_{1-x}(WO_4)_2$ phosphors with proper doping concentrations of $Ho^{3+}$, $Yb^{3+}$ and $Tm^{3+}$ ($x=Ho^{3+}+Yb^{3+}+Tm^{3+}$, $Ho^{3+}$=0.04, 0.03, 0.02, 0.01, $Yb^{3+}$=0.35, 0.40, 0.45, 0.50 and $Tm^{3+}$=0.01, 0.02, 0.03, 0.04) were successfully synthesized via the microwave sol-gel route, and their upconversion properties were investigated. Well-crystallized microcrystalline particles showed fine and homogeneous microcrystalline morphology with particle sizes of $1-2{\mu}m$. The optical properties were comparatively examined using photoluminescence emission and Raman spectroscopy. Under excitation at 980 nm, the doped particles exhibited white emissions based on blue, green and red emission bands, which correspond to the $^1G_4{\rightarrow}^3H_6$ transitions of $Tm^{3+}$ in the blue region, the $^5S_2/^5F_4{\rightarrow}^5I_8$ transitions of $Ho^{3+}$ in the green region, the $^5F_5{\rightarrow}^5I_8$ transitions of $Ho^{3+}$, and the $^1G_4{\rightarrow}^3F_4$ and $^3H_4{\rightarrow}^3H_6$ transitions of $Tm^{3+}$ in the red region. The pump power dependence of the upconversion emission intensity and the Commission Internationale de L'Eclairage chromaticity coordinates of the phosphors were evaluated in detail.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.10 no.3
• /
• pp.203-212
• /
• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.6
• /
• pp.1399-1404
• /
• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.

• Journal of Powder Materials
• /
• v.12 no.6 s.53
• /
• pp.399-405
• /
• 2005

Nanopowders of titanium dioxide $(TiO_2)$ incorporating the transition metal element(s) were synthesized by flame synthesis method. Single element among Fe(III), Cr(III), and Zn(II) was doped into the interior of $TiO_2$ crystal; bimetal doping of Fe and Zn was also made. The characteristics of transition-metal-doped $TiO_2$ nanopowders in the particle feature, crystallography and electronic structures were determined with various analytical tools. The chemical bond of Fe-O-Zn was confirmed to exist in the bimetal-doped $TiO_2$ nanopowders incorporating Fe-Zn. The transition element incorporated in the $TiO_2$ was attributed to affect both Ti 3d orbital and O 2p orbital by NEXAFS measurement. The bimetal-doped $TiO_2$ nanopowder showed light absorption over more wide wavelength range than the single-doped $TiO_2$ nanopowders.

• Current Photovoltaic Research
• /
• v.2 no.4
• /
• pp.147-151
• /
• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.