• 한국전기전자재료학회논문지
• /
• 제25권2호
• /
• pp.114-120
• /
• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

• 한국산학기술학회논문지
• /
• 제19권1호
• /
• pp.63-68
• /
• 2018

본 논문은 이산화탄소 고정 과정이 포함된 인공 광합성 과정을 모사하기 위하여 지구상에 흔히 존재하는 촉매 재료를 이용해 개발한 광화학 반응 시스템(인공나뭇잎)과 시스템 에너지 포집 및 변환 능력에 대한 성능을 조사하기 위한 기초 연구 결과를 제시한다. 본 연구에서 개발한 시스템은 태양광 전지의 전면부에 산화코발트를 도핑 하여 물의 전기분해로 인한 산소 발생이 태양전지 표면에서 직접 발생하도록 하였고, 후면 기판 표면에는 이산화탄소 변환 반응을 위한 효율적인 촉매로 $MoS_2$를 도핑 하여, 전선이 없는 구조로 구성하였다. 직접 태양광 연료 변환 시스템은 약4.5%로 이산화탄소를 일산화탄소와 수소로 변환하여 지속 가능한 연료(합성가스)의 형태로 생산하며, 이는 음극에서 촉매 변환 효율이 75%이상이 될 수 있음을 의미한다. 본 연구는 물의 광분해뿐만 아니라 태양광에 의해 유도된 이산화탄소 전환 과정을 하나의 시스템에서 동시에 실현하여 자연적 광합성 과정을 좀 더 성공적으로 모사할 수 있는 시스템 개발에 기여하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.350-353
• /
• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• 한국초전도ㆍ저온공학회논문지
• /
• 제15권4호
• /
• pp.15-20
• /
• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• 멤브레인
• /
• 제19권2호
• /
• pp.89-95
• /
• 2009

Poly(vinyl chloride) (PVC) 주사슬과 poly(hydroxyethyl acrylate) (PHEA) 곁사슬로 구성된 빗살모양의 PVC-g-PHEA 공중합체를 원자전달라디칼 중합을 통해 합성하였다. 이렇게 합성된 PVC-g-PHEA의 OH 그룹과 이미다졸 디카르복실릭산 (IDA)의 COOH 그룹과의 에스테르 반응에 의하여 가교된 전해질막을 제조하였다. 인산(PA)을 도핑하여 이미다졸-인산 착체를 형성한 결과, PA함량이 증가함에 따라 고분자 전해질막의 수소 이온 전도도가 증가하였다. 특히 100도 비가습 조건에서 수소 이온 전도도는 최대 0.011 S/cm까지 증가하였다. 만능 재료 시험기(UTM) 측정결과, 제조된 PVC-g-PHEA/IDA/PA 전해질막은 575 MPa의 높은 Young 모듈러스 및 기계적 강도를 보여주었다. 열분석 결과(TGA) 전해질막은 $200^{\circ}C$까지 열적으로 안정함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.436-439
• /
• 2002

Recently, It has performed that the basic research of the photoconductive material and the development and application of the digital radiograph detector which is divided into the direct and indirect method. The objective of this study investigate the effect of the electric characteristic about changing the composition of Arsenic in hybrid detector system for compensating a defect of conventional. We fabricated samples using the amorphous Selenium and Arsenic alloy with various concentrations of the Arsenic{seven step 0.1%, 0.3%, 0.5%, 1%, 1.5%, 3%, 5%). And using EFIRON optical adhesives the formed multi-layer$(Gd_{2}O_{2}S(Eu^{2+}))$ composed phosphor layer. X-ray and light sensitivity was measured to study x-ray response characteritics. As results, highest value was measured as output net charge and SNR were $315.7pC/cm^2/mR$ and 99.4 at 0.3%As doping ratio.

• 전자공학회논문지A
• /
• 제30A권12호
• /
• pp.51-59
• /
• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• 한국정보통신학회:학술대회논문집
• /
• 한국정보통신학회 2015년도 추계학술대회
• /
• pp.1121-1124
• /
• 2015

본 연구에서는 광대역 펄스감마선 탐지센서 최적화설계에 관한 연구를 수행하였다. 펄스감마선 탐지센서는 $1{\times}10^6{\sim}1{\times}10^8rad(Si)/s$의 방사선량에서 동작할 수 있도록 설계하였다. 에너지에 따른 펄스감마선 스펙트럼과 시간에 따른 에너지 비율을 기반으로 탐지센서 입력변수를 도출하고, 탐지감도 제어회로를 기반으로 탐지센서 출력전류를 도출하였다. N-type Epi Wafer를 이용하여 최적조건 탐지센서를 TCAD기반으로 설계하였다. 시뮬레이션 결과 인가전압 3.3V에서 최적 Epi층 두께는 45um다. 도핑농도는 N-type은 Arsenic으로 $1{\times}10^{19}/cm^3$, P-type은 Boron으로 $1{\times}10^{19}/cm^3$, Epi 층은 Phosphorus로 $3.4{\times}10^{12}/cm^3$다. 마지막으로 탐지센서는 원형으로 지름이 1.3mm 이다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.237-238
• /
• 2008

본 연구에서는 APD 소자 제작시 주로 쓰이는 RTA에 의한 Zn 확산방법에 사용할 경우 undoped InP의 V/III비율에 따른 Zn원자의 확산, 도핑, 오믹저항의 성장을 조사하였다. RTA에 의한 확산 및 활성화 열처리 시 도핑 농도의 프로파일은 확산열처리만 한 경우보다 활성화 처리한 경우 더 커짐을 볼 수 있었다. SIMS 결과 활성화 처리 후 표면쪽에 Zn원자의 약간의 결핍현상을 보이는 데 이는 표면쪽에 Zn원자의 탈착이 약간 이루어지는 것으로 보인다. 이 원인은 결과적으로 오믹저항의 증가를 가져왔다.

• 한국초전도ㆍ저온공학회논문지
• /
• 제19권3호
• /
• pp.40-43
• /
• 2017

Carbon coating approach is used to prepare carbon-doped $MgB_2$ bulk samples using low-cost naphthalene ($C_{10}H_8$) as a carbon source. The coating of carbon (C) on boron (B) powders was achieved by direct pyrolysis of naphthalene at $120^{\circ}C$ and then the C-coated B powders were mixed well with appropriate amount of Mg by solid state reaction method. X-ray diffraction analysis revealed that there is a noticeable shift in (100) and (110) Bragg reflections towards higher angles, while no shift was observed in (002) reflections for $MgB_2$ doped with carbon. As compared to un-doped $MgB_2$, a systematic enhancement in $J_c(H)$ properties with increasing carbon doping level was observed for naphthalene-derived C-doped $MgB_2$ samples. The substantial enhancement in $J_c$ is most likely due to the incorporation of C into $MgB_2$ lattice and the reduction in crystallite size, as evidenced by the increase in the FWHM values for doped samples.