• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
• /
• pp.363-367
• /
• 1988

A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1112-1115
• /
• 2005

In this study, we performed excimer laser activation on Phosphorus or Boron doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 하계학술대회 논문집
• /
• pp.366-366
• /
• 2010

Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, below Intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. Efficiency with variation of the concentration was grown by the a-Si p-type with increasing concentrations of Na, efficiency with increasing a-Si n-type of Nd Concentrations was not changed, was decreased rapidly when concentrations were decreased. Efficiency was increased when c-Si n-type of Nd concentration was increased, otherwise efficiency was decreased when concentration was decreased.

• 한국초전도ㆍ저온공학회논문지
• /
• 제17권4호
• /
• pp.8-11
• /
• 2015

We studied on the visible emission of Cu-ion-doped perovskite hafnate $SrHfO_3$ (SHO:Cu) with the photo-excitation energy dependence. The polycrystalline SHO:Cu samples were newly synthesized in the solid state reaction method. From the X-ray diffraction measurement it was found that the crystalline structure of SHO:Cu is nearly identical to that of undoped $SrHfO_3$. Interestingly, the photoluminescence excitation (PLE) spectra change significantly with the emission energy, which is linked to the strong dependence of the visible emission on the photo-excitation energy. This unusual emission behavior is likely to be associated with the mixed valence states of the doped Cu ions, which were revealed by X-ray photoelectron spectroscopy. We compared our finding of tunable visible emission in the SHO:Cu compounds with the cases of similar materials, $SrTiO_3$ and $SrZrO_3$ with Cu-ion-doping.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.195-198
• /
• 2003

본 연구에서는 MILC 및 FALC를 도핑 타입에 따른 온도별 패턴별 인가 전압별로 진행하여 현미경 및 FESEM 관찰을 함으로써 그 메커니즘을 규명하고자 하였다. LPCVD를 이용하여 $1000\;{\AA}$ a-Si 을 glass에 입힌 후 photolithography법 또는 Hard Mask법으로 Ni $200\;{\AA}$ 을 선택적으로 증착하였으며 Pt 전극을 Sputtering법으로 제작하였다. $33\;{\sim}\;200\;V/cm$의 전기장 하에서 MILC 속도가 2배 정도 증가되는 현상이 관찰되었으며 또한 인접패턴에 의해 FALC 속도가 영향을 받는 현상이 관찰되었다. 또한 전자가 움직이는 방향으로 MILC 선단영역 전후에 Void가 발생하는 영역이 존재함을 발견하였다. FESEM 분석을 통하여 FALC 영역 및 Void 영역을 관찰한 결과 도핑 종류에 따라 결정화 양상이 다른 것이 관찰되었으며 Void 분석결과 Charged vacancy가 어닐링시 결집되어 나타나는 것으로 분석할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1994년도 추계학술대회 논문집
• /
• pp.97-100
• /
• 1994

The present paper is devoted to the physical and electrical characteristics of N-docosyl- quinolinium-TCNQ films compared with the films doped with I$_2$. Iodine affects the degree of charge transfer and the conductivity of the films. The UV-visible absorption spectra of the film doped with I$_2$ shows that the peak of I$_3$ which had electronic transition at 300∼350nm and (TCNQ-)$_2$ dimer absorption disappered. The in-plane electrical conductivity of the films doped with I$_2$ were 1.4${\times}$10$\sub$-6/S/cm, which is two orders of magnitude higher conductivity than undoped LB films. The film structural difference between Y and Z-type may cause the conductivity. Another possible reasons of the structural difference was the overlapping TCNQ anion radical in LB films.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
• /
• pp.319-323
• /
• 1988

For finding the effects of As on $TiSi_2$ formation, sputter deposited Ti film on Si substrates implanted with various doses of As have been rapid thermal annealed in Ar atmosphere at temperatures of 600-900$^{\circ}C$ for 20 sec. The sheet resistance of Ti-Silicides was examined with 4-point probe, the thickness with ${\alpha}$-step, and the As dopant behavior in Si substrates with ASR. The thickness of Ti-Silicides decreased with increasing As doping, but Ti-Silicides sheet resistance increased with increasing it. However, the critical concentration effect reported by Park et al. was not observed. We observed that the thickness of native oxide increase with increasing As doping. Thus, we concluded that native oxide act as a "barrier" for the Si diffusion.

• 한국세라믹학회지
• /
• 제46권2호
• /
• pp.219-223
• /
• 2009

Effects of MgO or $R_2O_3$(R:Dy, Ho, Yb) on the capacitance aging behavior of multilayer ceramic capacitors (MLCCs) based on $BaTiO_3$ dielectrics under DC electrical fields has been studied. At a DC field of 1 $V{/\mu}m$, the capacitance of MLCC specimens dropped immediately in a very short period (<10 s, the first stage) and then decreased continuously with time (the second stage). Mn doping significantly increased the aging rate in the second stage. The addition of MgO or $R_2O_3$ notably decreased the second stage aging rate of Mn-doped specimens. Yb doping gives rise to the lowest aging rate in the second stage, which is due to the larger population of defect dipoles associated with oxygen vacancies.

• Journal of Magnetics
• /
• 제18권4호
• /
• pp.405-411
• /
• 2013

The structural, magnetic and magnetocaloric properties of $CoMn_{1-x}Cr_xGe$ (x=0.05-0.125) have been investigated by using electron microscopy, x-ray diffraction, calorimetric and magnetic measurements. In this study, our aim is to justify the magnetocaloric effect by tuning the structural and magnetic transition temperature with Cr doping on CoMnGe pure system. The substitution of Cr for Mn leads to a decrease of both structural and magnetic transition temperatures. However, structural and magnetic transition temperatures do not close to each other. From magnetization measurement, we calculate that isothermal entropy change associated with magnetic transition can be as high as 3.82 J $kg^{-1}K^{-1}$ at 302 K in a field of 7 T. Meanwhile, structural phase transition contribution to isothermal entropy change is calculated as 5.85 J $kg^{-1}K^{-1}$ at 322 K for 7 T.

• 전자공학회논문지D
• /
• 제34D권6호
• /
• pp.43-49
• /
• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.