• Current Photovoltaic Research
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• v.1 no.2
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• pp.115-121
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• 2013

ZnO film has been used for CIGS solar cells as a buffer layer as itself or by doping Mg and Sn; ZnO film also has been used as a transparent conducting layer by doping Al or B for solar cells. Since ZnO itself is a host material for many applications it is necessary to understand the electrical and optical properties of ZnO film itself with various preparation conditions. We prepared ZnO films by converting ZnS precursor into ZnO film by thermal annealing. ZnO film was formed at low temperature as low as $500^{\circ}C$ by annealing a ZnS precursor layer in air. In the air annealing, the electrical resistivity decreased monotonically with increasing annealing temperature; the intensity of the green photoluminescence at 505 nm increased up to $750^{\circ}C$ annealing. The electrical resistivity further decreased and the intensity of green emission also increased in reducing atmospheres. The results suggest that deep-level defects originated by oxygen vacancy enhanced green emission, which reduce light transmittance and enhance the recombination of electrons in conduction band and holes in valence. More oxidizing environment is necessary to obtain defect-free ZnO film for higher transparency.

• Journal of Magnetics
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• v.18 no.4
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• pp.386-390
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• 2013

This paper studies the effects of A-site substitution by barium on the magnetic and magnetocaloric properties of $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ (x = 0, 0.04, 0.08 and 0.1). The tetragonal crystal structures of the samples are confirmed by room temperature X-ray diffraction. The dependence of the Curie temperature ($T_C$) and the magnetic entropy change (${\Delta}S_M$) on the Ba doping content has been investigated. The samples of all doping contents undergo the second order phase transition. As the concentration of Ba increased, the maximum entropy change ($|{\Delta}S_M|_{max}$) increased gradually, from 1.15 J $kg^{-1}$ $K^{-1}$ (x = 0) to 1.36 J $kg^{-1}$ $K^{-1}$ (x = 0.1), in a magnetic field change of 1.5 T. The measured value of $T_C$ is 265 K, 275 K, 260 K and 250 K for x = 0, 0.04, 0.08 and 0.1, respectively. If combining these samples for magnetic refrigeration, the temperature range of ~220 K and 290 K, where |${\Delta}S_M$|max is stable at ~1.27 J $kg^{-1}$ $K^{-1}$ and RCP = 88.9 $J{\cdot}kg^{-1}$ for ${\Delta}H$ = 1.5 T. $Pr_{0.5}Sr_{0.5-x}Ba_{x}MnO_{3}$ compounds, are expected to be suitable for magnetic-refrigeration application due to these magnetic properties.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.64-65
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• 2002

Recently the synthetic antiferromagnetic layer (SAF) has received much attention because it replaces the pinned layer of the conventional spin valve (CSV) sensors and its overall performance [1], The spin valve (SV) with SAF has the from buffer/F/Cu/APl/Ru/AP2/AF, where F is the soft ferromagnetic layer (typically NiFe with CoFe interfacial doping), AP1 and AP2 are two ferromagnetic layers (typically CoFe alloys) antiferromagnetically coupled through a thin Ru layer. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.101-104
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• 1992

In-doped CdS thin films have been deposited at 150$^{\circ}C$ by simultaneous thermal evaporation of CdS and In. Deposition rate and film thickness were 8A/sec and about 1um, respectively. Indium doping concentration of films varied as Indium source temperature from 500$^{\circ}C$ to 700˚. Properties of In-CdS films have been investigatied by measurements of electrical resistivity, Hall effect, X-ray diffraction and optical trasmission spectra. The conductivity of these films was always n-type. The resistivity, carrier concentration, mobility and optical band gap dependence on Indium source temperature are reported. Carrier concentration and mobility of In-CdS films increased with increasing Indium source temperature: then they decreased. The variation of the optical band gap of In-CdS thin films are related to carrier concentration.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.56-59
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• 2000

In this paper, we have made a comparison between secondary ion mass spectroscopy(SIMS) data by the 5kcV-15keV boron implantation and computer simulation results. In order to make electrical activation of implanted carriers, thermal annealing are carried out by RTP method for 30s at 1000$^{\circ}C$ Two dimensional doping concentration distribution from different mask dimensions under inert gas annealing, dry-, and wet-oxidation condition were calculated and simulated with microtec simulator.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.537-540
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• 1998

A MESFET device with double $\delta-doped$ channel is designed and investigated by computer simulation. The device with optimized design parameters such as a doping ratio and a spacer thickness, shows superior performance to conventional MESFETs. The effects of the FWHM of $\delta-doped$ layers device characteristics are investigated to account for the thermal process

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.425-431
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• 1996

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.3
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• pp.267-273
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• 1992

An advanced on-resistance model of VDMOS devices in the low voltage regimes is proposed and verified by 2-D device simulations. The model considers the lateral gaussian doping profiles in the channel region and exact current spreading angles in the epitaxial layer for both linear and cellular geometries by employing the conformal mapping, It is found out that the on-resistance of low voltage VDMOS may be overestimated considerably if it is analyzed by the conventional method. The 2-D device simulation results show that the proposed model is valid for the VDMOS devices in the low voltage regimes.

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.91-91
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• 2009

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.11-11
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• 2009