• 콘크리트학회논문집
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• 제15권2호
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• pp.163-172
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• 2003

최근 콘크리트 구조물이 점차 대형화, 고층화, 장대화 및 특수화 됨에 따라 강섬유 콘크리트의 적용이 요구되고 있다. 본 연구에서는 반복하중을 받는 강섬유를 혼입한 2경간 연속보에 대한 실험적 연구를 수행하여 피로하중에 의한 강섬유 혼입율(0%, 0.75%, 1.00%, 1.25%)에 따른 피로강도를 규명하고자 하였다. 정적실험을 통하여 극한하중, 초기 휨균열하중 등을 측정하였고 하중과 철근의 변형율 관계, 하중과 처짐 관계 그리고 하중증가에 따른 균열성장과 파괴양상 등을 관찰하였다. 피로실험을 통하여 반복횟수와 처짐 관계, 반복횟수와 변형율 관계 그리고 반복횟수에 따른 균열성장과 파괴양상을 관찰하였다. 피로실험 결과 강섬유를 혼입하지 않은 2경간 연속보는 정적극한강도의 60~70%에서 파괴되었고 S-N곡선으로부터 반복횟수 200만회에 대한 피로강도는 정적극한강도의 67.2% 전후임을 확인 할 수 있었다. 또한, 강섬유를 혼입한 2경간 연속보는 정적극한강도의 65∼85%에서 파괴되었고 S-N곡선으로부터 반복횟수 200만회에 대한 피로강도는 정적극한강도의 71.7%전후임을 확인할 수 있었다.

• 한국압력기기공학회 논문집
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• 제6권1호
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• pp.50-56
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• 2010

Fatigue has been known as a major degradation mechanism of ASME class 1 components in nuclear power plants. Fatigue damage could be accelerated by combined interaction of several loads and environmental factors. However, the environmental effect is not explicitly addressed in the ASME S-N curve which is based on air at room temperature. Therefore many studies have been performed to understand the environmental effects on fatigue behavior of materials used in nuclear power plants. As a part of efforts, we performed low cycle fatigue tests under various environmental conditions and analyzed the environmental effects on the fatigue life of SA508 Gr. 1a low alloy steel by comparing with higuchi's model. Test results show that the fatigue life depends on water temperature, dissolved oxygen and strain rate. But strain rate over 0.4%/s has little effect on the fatigue life. To find the cause of different fatigue life with ANL's and higuchi's model, another test performed with different heat numbered and heat treated materials of SA508 Gr. 1a. On a metallurgical point of view, the material with bainite microstructure shows much longer fatigue life than that with ferrite/pearlite microstructure. And the characteristics of crack propagation as different microstructure seem to be the main cause of different fatigue life.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2004년도 춘계 학술발표대회 개요집
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• pp.255-257
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• 2004

This report presents S-N testing results of the butt and T-joint weldment which are produced by single sided welding with cenramic backing material. The specimen is designed in accordance with JISZ 3103 aid the test is peformed by the JSME S002. The nominal and hot spot stress based design S-N curves derived from fatigue tests are compared with the BS design curve. For butt and T-joint, it can be known that the double-sided butt welding process could be replaced by the single sided butt welding.

• EDISON SW 활용 경진대회 논문집
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• 제5회(2016년)
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• pp.357-361
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• 2016

Si와 InAs 두 가지 채널 물질을 가지고 3가지 수송 방향 <100>, <110>, <111>으로 변화시키며 각각의 Nanowire nMOSFETs을 가지고 ballistic quantum transport simulation을 진행하였다. 각각의 경우에 대해 E-k curve를 구한 다음에 band curvature로 캐리어의 유효질량을 계산하고, 이를 통해 MOSFET의 전류 세기를 결정짓는 DOS와 carrier injection velocity를 구하여 어떤 경우에 가장 높은 ON-current를 흐르게 하는지 확인해 보았다. 하지만 예상과 달리 나노와이어의 직경이 1.4nm으로 매우 작기 때문에 valley-splitting이 일어나 Si<110>의 경우에 가장 작은 캐리어 유효 질량을 갖고 있는 사실을 확인할 수 있었다. 결론적으로 Si<100>의 경우에 trade-off 관계에 있는 DOS와 carrier injection velocity가 6가지 경우 중 최적의 조합을 가짐으로써 가장 높은 ON-current를 흐르게 하였다.

• 한국연소학회지
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• 제10권3호
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• pp.25-33
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• 2005

Fast-time instability is investigated for diffusion flames with Lewis numbers greater than unity by employing the numerical technique called the Evans function method. Since the time and length scales are those of the inner reactive-diffusive layer, the problem is equivalent to the instability problem for the $Li\tilde{n}\acute{a}n#s$ diffusion flame regime. The instability is primarily oscillatory, as seen from complex solution branches and can emerge prior to reaching the upper turning point of the S-curve, known as the $Li\tilde{n}\acute{a}n#s$ extinction condition. Depending on the Lewis number, the instability characteristics is found to be somewhat different. Below the critical Lewis number, $L_C$, the instability possesses primarily a pulsating nature in that the two real solution branches, existing for small wave numbers, merges at a finite wave number, at which a pair of complex conjugate solution branches bifurcate. For Lewis numbers greater than $L_C$, the solution branch for small reactant leakage is found to be purely complex with the maximum growth rate found at a finite wave number, thereby exhibiting a traveling nature. As the reactant leakage parameter is further increased, the instability characteristics turns into a pulsating type, similar to that for L < $L_C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.753-756
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• 1992

The piezoelectric ceramics of PMS-PZT was made in the radial mode disk. As the results, in the application of filter required conditions: that is, higher-values for piezoelectric properties($K_p$, $Q_m$) and lower-values for stabilities of $F_{\tau}$(temp. coefficient, aging rate), 5PMS-51PT-44PZ composition statified well. This composition was made in the dot-ring type. Asthe results, with increasing $n^2$ both $Q_m$ and S had high values, decreasing $n^2$ both $K_p$ and BW had low values when the diameter of sintered bodies were constant. Therefore, curve of filter characteristic have sharped with increasing $n^2$ and BW broadened with decreasing $n^2$.

• Journal of the Optical Society of Korea
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• 제14권4호
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• pp.321-325
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• 2010

We analyze the current density - voltage (J - V) curve of a Cu(In,Ga)$Se_2$ (CIGS) thin-film solar cell measured at different irradiation power densities. For the solar-cell sample investigated in this study, the fill factor and power conversion efficiency decreased as the irradiation power density (IPD) increased in the range of 2 to 5 sun. Characteristic parameters of solar cell including the series resistance ($r_s$), the shunt resistance ($r_{sh}$), the photocurrent density ($J_L$), the saturation current density ($J_s$) of an ideal diode, and the coefficient ($C_s$) of the diode current due to electron-hole recombination via ionized traps at the p-n interface are determined from a theoretical fit to the experimental data of the J - V curve using a two-diode model. As IPD increased, both $r_s$ and $r_{sh}$ decreased, but $C_s$ increased.

• 한국화재소방학회논문지
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• 제22권4호
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• pp.65-69
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• 2008

인화점의 정보를 확보하는 것은 화재 및 폭발의 예방을 위해 대단히 중요하다. 본 연구에서는 n-propanol+formic acid 계의 하부 인화점을 Penskey-Martens 밀폐식 장치를 이용하여 측정하였다. 이성분계 혼합물은 최소 인화점 현상(MFPB)을 보였다. 실험값은 Raoult의 법칙과 최적화 기법에 의해 추산된 값과 비교하였다. 그 결과, 최접화 기법에 의한 추산값이 Raoult의 법칙에 의한 추산값 보다 실험값에 더욱 근접하였다.

• Journal of Animal Science and Technology
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• 제44권5호
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• pp.519-522
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• 2002

농협 한우 개량부에서 시험 사육한 거세우 및 비거세우 각각 60두의 자료를 근거로 곰페르츠 방정식에 의한 성장곡선을 추정한 결과 비거세우의 성장곡선 방정식은 $W_t$ = 906.1.exp{－3.956.exp(－0.0034t)}이었으며, 거세우의 성장곡선 방정식은 $W_t$ = 823.1.exp{－3.301.exp(－0.0027t}이었다. 이 추정식에 의한 성숙체중은 과거에 추정한 식보다 높게 추정되었는데 이는 사양조건의 차이에 의한 것으로 사료된다. 비거세우에 대한 거세우의 체중비는 19.5개월까지는 급격히 감소하여 79.2% 정도에 이르렀으나, 이후 격차는 서서히 줄어들어 성숙시에는 90.8%에 이르렀다. 추정식은 생시 체중이 거세우의 경우 과다하게 그리고 비거세우의 경우 과소하게 추정되었으며, 실제 체중의 변이는 비거세우가 거세우에 비해 큰 경향을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.